Untitled
Abstract: No abstract text available
Text: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili
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pPD4216100,
juPD4216100
/iPD4217100
JHPD4216100,
S3IH-68158
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Untitled
Abstract: No abstract text available
Text: NEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Prelim inary Information Description T he /JPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power
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pPD4216100,
/JPD4216100
/JPD4217100
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uPD4216100
Abstract: 4216100
Text: NEC ELECTRONICS INC blE » • b4E7S2S 0033^ 34 SES MNECE » ,-y I W NEC Electronics Inc. fiPD4216100, 4217100 16,777,216 x 1-Bit Dynamic CMOS RAM T W Description The pPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit
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uPD4216100
pPD4216100
/iPD4217100
46-volt
b427555
JJPD4216100,
4216100
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 1 6 1 0 0 ,4 2 1 7 1 0 0 16 M BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE Description The //PD4216100, 4217100 are 16 777 216 words by 1 bit dynam ic CMOS RAMs. These are packed in 26-pin Plastic TSOP II and 26-pin Plastic SOJ.
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uPD4216100
uPD4217100
26-pin
PD4216100-50
/iPD4217100-50
PD4216100-60
//PD4217100-60
PD4216100-70
PD4217100-70
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SA9C
Abstract: No abstract text available
Text: SEC fiPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description T he juPD4216100 and the /JPD4217100 are fast-page dynam ic RAMs organized as 16,777,216 words by 1 bit and designed to o p e ra te from a single +5-volt power supply. A dvanced polycide technology m inim izes sili
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uPD4216100
uPD4217100
SA9C
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4216100
Abstract: 4216100-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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MD42S16100,
42S17100
uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
/iPD42S16100,
//PD42S16100,
4216100
4216100-70
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Untitled
Abstract: No abstract text available
Text: USER'S MANUAL NEC Document No. M10339EJ2V0UMU1 491 [MEMO] 492 INTRODUCTION Purpose This manual is intended for users who understand DRAM functions and design applica tion systems using DRAMs. Readers This manual explains the basic properties of DRAM and their use.
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M10339EJ2V0UMU1
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4216100
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT r/iPD42S16100 ,4 2 1 6 1 0 0 ,4 2 S 1 7 1 0 0 ,4217100 16M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The juPD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the ¿¿PD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
16M-BIT
PD42S16100,
42S17100,
42S17100
4216100
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT MPD4216100, 4217100 16M -B IT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The fiPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 words by 1 bit organization
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PD4216100,
fiPD4216100,
pPD4216100
cycles/64
/iPD4217100
cycles/32
pPD4216100-50
PD4217100-50
016t8oos
b427525
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