3we22
Abstract: 8001P
Text: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features
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uPD421x800/L
uPD42S1x800/L
42S16800
42S17800
8001Power
42S1X800/L
jjPD421
800/L,
b427S25
DG34DD4
3we22
8001P
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VO1263
Abstract: No abstract text available
Text: fiPD421x800/L, 42S1x800/L X = 6 , 7 2,097,152 X 8-Bit Dynamic CMOS RAM WEC NEC Electronics Inc. Description The devices listed below are fast-page dynam ic RAMs organized as 2 M words by 8 bits and designed to o p e ra te from a single power supply. O ptional features
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uPD421x800/L
uPD42S1x800/L
42S16800
42S17800
aintain42S1X800/L
pPD421x800/L,
42S1X800/L
ffPD421x800/L,
VO1263
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
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st vu
Abstract: cc460 Himax NEC SOI switch 043tg
Text: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see
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OCR Scan
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/JPD42S16800L,
4216800L,
42S17800L,
4217800L
iPD42S16800L,
42S17800L
st vu
cc460
Himax
NEC SOI switch
043tg
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Untitled
Abstract: No abstract text available
Text: Information 16 M DRAM DATA COLLECTION 2M-word by 8-bit, Revision P Document No. M12859XJ1V0IF00 1st edition Date Published September 1997 N 1997 Printed in Japan [MEMO] 2 SUMMARY OF CONTENTS CHAPTER 1 DRAM PROCESS .
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Original
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M12859XJ1V0IF00
PPD42S16805L,
4216805L.
PPD42S17805L,
4217805L.
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RE300
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /fPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode _ _ capability realize high speed access and low pow er consumption.
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uPD42S17800L
uPD4217800L
The/iPD42S17800L,
4217800L
pPD42S17800L
28-pin
17800L
7800L-A
uPD42Sl
RE300
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE D escription T h e M C -4 2 S 2 0 0 0 L A B 3 2 S series is a 2 ,0 9 7 ,1 5 2 w o rd s by 3 2 bits d y n a m ic R A M m o d u le (S m a ll O u tlin e D IM M )
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MC-42S2000LAB32S
32-BIT
b427525
72PIN
1111111111111111111111111111111111ITT
M72S-50A1-2
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itr 8102
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT jjPD42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /iPD42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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uPD42S17800L
uPD4217800L
/iPD42S17800L,
4217800L
PD42S17800L
28-pin
VP15-207-2
itr 8102
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