PTF211301A Search Results

PTF211301A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTF211301A		Infineon Technologies	LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz		Original	PDF

PTF211301A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PTF211301E Abstract: No abstract text available Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier	Original	PTF211301E PTF211301F 130watt, PTF211301F*	PDF
702 Z TRANSISTOR smd Abstract: 702 Z smd TRANSISTOR ATC capacitor 702 TRANSISTOR smd capacitor 2220 702 H transistor smd PCC104BCT LM7805 smd marking us capacitor pf l1 transistor smd marking ND Text: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures	Original	PTF211301 PTF211301 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR ATC capacitor 702 TRANSISTOR smd capacitor 2220 702 H transistor smd PCC104BCT LM7805 smd marking us capacitor pf l1 transistor smd marking ND	PDF
702 Z TRANSISTOR smd Abstract: 702 Z smd TRANSISTOR 702 k TRANSISTOR smd SMD transistor marking 702 Text: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures	Original	PTF211301 PTF211301 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR 702 k TRANSISTOR smd SMD transistor marking 702	PDF
PTF211301F Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier	Original	PTF211301E PTF211301F PTF211301E PTF211301F 130watt, PTF211301F* BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd	PDF