PTMB75B12C Search Results

PTMB75B12C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTMB75B12C		Nihon Inter Electronics	IGBT SP series Six-Pack 75A 1200V		Original	PDF

PTMB75B12C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IGBT SPseries PTMB75B12C SixSix-Pack 75A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 330g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range	Original	PDF	PTMB75B12C fig11-Tansient
PTMB75B12C Abstract: No abstract text available Text: IGBT SPseries PTMB75B12C SixSix-Pack 75A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 330g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range	Original	PDF	PTMB75B12C TC125 fig11-Tansient PTMB75B12C
74hc06 Abstract: TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A Text: 目录各种功率半导体器件和IGBT IGBT模块电路构成 IGBT模块的额定值和特性 IGBT模块的损耗和散热设计 IGBT模块的门极驱动上桥臂的驱动 3相供电VVVF变频器系统框图 IGBT元件的短路和过电压保护 IGBT元件的过电压保护缓冲电路	Original	PDF	PHMB400B12 PDMB100B12C 1/2LiC21/2Cse2 600V1 200A1 200V800AIGBT3 100kWIGBT 200A1200V800A 74hc06 TLP250 IGBT 10KHz IR2171 ptmb50e6c igbt rcd SCR 207A 50A 1200V SCR SCR 100A 1200V Equivalent for SCR 207A
TLP250 MOSFET DRIVER application note Abstract: TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase Text: CONTENTS POWER DEVICES and IGBT 2 Variation of NIEC’s IGBT Modules 4 Ratings and Characteristics 6 Power Loss and Thermal Design 10 Gate Drive 20 High Side Drive 24 3-Phase Bridge Inverter 26 Short circuit and Over-voltage Protection 30 Snubber 33 Parallel Operation	Original	PDF	00A/600V 00A/1200V TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER calculation of IGBT snubber 74hc06 tlp250 equivalent TLP250 igbt driver applications TLP250 application note difference between IGBT and MOSFET IN inverter SCR 207A scr driver ic for rectifier 3 phase
LA 4825 Abstract: No abstract text available Text: 目次各種パワーデバイスとIGBT 2 IGBTモジュール回路構成 4 IGBTモジュール定格と特性 6 IGBTモジュール損失と放熱 10 IGBTモジュールのゲートドライブ 20 ハイサイドのドライブ 24 3相ブリッジインバータ	Original	PDF
PT76S16 Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
508RP Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40 Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF
74hc06 Abstract: equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT Text: 목차 각종 전력 소자와 IGBT 2 IGBT 모듈의 회로 구성 4 IGBT 모듈의 정격 및 특성 6 IGBT의 모듈 손실과 방열 10 IGBT 모듈의 게이트 구동 20 상부 구동 24 3상 브리지 인버터 26 단락 및 과전압 보호 30 스너버 회로	Original	PDF	100kW 74hc06 equivalent components for scr 207a SCR 207A 15KW igbt 200 A 1200 V TLP250 200V igbt 15KW igbt SCR 100A 1200V 0.75KW* LG IGBT
PDM5001 Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16 Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH	Original	PDF	C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
FCGS20A12 Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10 Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ	Original	PDF