F8212
Abstract: E1307 F5020 F8050 equivalent F5022 f8432 f8050 E1203139 e2136 F5020 Transistor
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
G0706
F8212
E1307
F5020
F8050 equivalent
F5022
f8432
f8050
E1203139
e2136
F5020 Transistor
|
PDF
|
F8212
Abstract: F8601 E1307 78K0R U19810EJ1V0UM00 E-032 E1204 F3415 V850E2V3 led message display projects f8432
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
U19810EJ1V0UM
F8212
F8601
E1307
78K0R U19810EJ1V0UM00
E-032
E1204
F3415
V850E2V3
led message display projects
f8432
|
PDF
|
F8212
Abstract: E1307 W8509 E2630 E2750 E2712 E2751 e2632 E2515 E2749
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
78K0R
U19810JJ1V0UM00
U19810JJ1V0UM
F8212
E1307
W8509
E2630
E2750
E2712
E2751
e2632
E2515
E2749
|
PDF
|
F8212
Abstract: E1307 F8050 equivalent f2608 E2749 e2632 f8050 f6550 e2411 F5020 Transistor
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
G0706
F8212
E1307
F8050 equivalent
f2608
E2749
e2632
f8050
f6550
e2411
F5020 Transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Fast response time • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to
|
OCR Scan
|
SD3421/5421
SE3450/5450,
SE3455/5455
SE3470/5470
SD3421/5421
SD3421
SD5421
--I50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M IT SU BISH I MICROCOM PUTERS M 37 7 10 S 4B F P 16-BIT CM OS M ICRO C O M PU TER DESCRIPTION The M37710S4BFP is a microcomputer designed with highperformance CM O S silicon gate technology. This is housed in a 80-pin plastic molded QFP. This microcomputer has a
|
OCR Scan
|
16-BIT
M37710S4BFP
80-pin
37710S4B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz
|
OCR Scan
|
TIM7179-16SL
Q0225Bb
00225A7
|
PDF
|
TP2020L
Abstract: VP2020L BSS92 TP1220L TF1725
Text: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V
|
OCR Scan
|
tp1220l,
tp/vp2020l,
bss92
TP1220L
TP2020L
VP2020L
BSS92
-100V
O-226AA)
S-52426â
TF1725
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V
|
OCR Scan
|
TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
S-52426â
14-Apr-97
00EE570
|
PDF
|
gg22
Abstract: 20P5A DD22S
Text: MITSUBISHI SOUND PROCESSOR ICs M 5 1 5 2 4 L /P /F P AUTO REVERSE PREAMPLIFIER WITH MUSIC SENSOR DESCRIPTION The M51524 is a preamplifier IC developed for car audio systems. The IC, in additions to 2 channels of high-gain, low-noise preamplifiers, has a lead-in
|
OCR Scan
|
M51524
b24Tfl2b
002253b
M51524U/P/FP
M51524P/FP)
gg22
20P5A
DD22S
|
PDF
|
MB86605
Abstract: No abstract text available
Text: FUNCTIONS FUJITSU 3.1. BLOCK DIAGRAM - 16-Bit Bus Mode D15 to D7 to D8, DO, INT UDP LDP -W R SCSI Interface -RD -CSO -CS1 A4 to AO -BHE MODE1 MODEO t 0 I I I I fl I I I MPU Interface -MSG • -C /D -I/O -ATN ■ Internal Processor Various Registers Timer 32 bytes
|
OCR Scan
|
16-Bit
DMD15
-DB15
374175b
Q022532
MB86605
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CS5180 AZ Modulator & 8 kHz to 400 kHz 16-Bit ADC Features Description • 16-Bit Delta-Sigm a A /D Converter CS5180 is a fully calibrated high-speed A L analog-todigital converter, capable of 400 kSamples/second out put word rate OWR . The OWR scales with the master
|
OCR Scan
|
CS5180
16-Bit
CS5180
CS5180s
DS259F1
213bb3R
DG225bfl
|
PDF
|
gs 069 0605
Abstract: pw 2222 a mosfet vn10lm mosfet vn10 SILICONIX MARKING to237 vn10 52429 Siliconix vn10 VN10LE
Text: T em ic VN10/0605/0610/2222 Series Se mi c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber V BR DSS M in (V) r DS(on) M a x (£2) V GS(th)(V ) I D M in (A ) VN10LE
|
OCR Scan
|
VN10/0605/0610/2222
VN10LE
VN10LM
VN0605T
VN0610LL
VN2222LL
VN2222LM
gs 069 0605
pw 2222 a
mosfet vn10lm
mosfet vn10
SILICONIX MARKING to237
vn10
52429
Siliconix vn10
|
PDF
|
IPM1560
Abstract: high side IGBT driver optocoupler
Text: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.
|
OCR Scan
|
300VDC,
25kHz
IPM1560
10-Timing
4A55M52
Q0225
high side IGBT driver optocoupler
|
PDF
|
|
|
TIM7179-16SL
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz
|
OCR Scan
|
TIM7179-16SL
D0225Ã
TIM7179-16SL_
TIM7179-16SL
|
PDF
|
AOI gate d flip flop
Abstract: l4974 ekr 1000
Text: 7^2=1237 r z ^ 7 7 □ 0 2 2 5 fiL4 H S C S -T H O M S O N # M @ [R m iO T « n @ S G S-THOMSON - r SB § _ 30E 1 3.1 L 4 9 7 5 » 5A SWITCHING REGULATOR A D VA N C E DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■
|
OCR Scan
|
500KHz
L4975
L4974.
330pF
jjj30K
L4374
50KHz
L4970
AOI gate d flip flop
l4974
ekr 1000
|
PDF
|