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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, - Single carrier level • High power - P-\|dB = 39 dBm at 6.4 GHz to 7.2 GHz	OCR Scan	PDF	TIM6472-7L 2-11D1B) TCH7E50 Q0EES54 MW50870196

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, - Single carrier level • High power - P-|dB = 39 dBm at 6.4 GHz to 7.2 GHz

OCR Scan

PDF

TIM6472-7L 2-11D1B) TCH7E50 Q0EES54 MW50870196