qed12x
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
QED122
qed12x
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D880
Abstract: No abstract text available
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
QED122
D880
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qed12x
Abstract: QED121 QED122 QED123 QSD122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
DS300336
qed12x
QED121
QED122
QED123
QSD122
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TIP 122 100 V
Abstract: TIP 122 transistor QED121 QED122 QED123 qsd122
Text: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°
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QED121/122/123
QSD122/123/124
100021B
TIP 122 100 V
TIP 122 transistor
QED121
QED122
QED123
qsd122
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QED121
Abstract: QED123 Fairchild 902 QED122
Text: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs
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QED121,
QED122,
QED123
880nm
QED122
QED123
QSD122/QSD123/QSD124
QED121
Fairchild 902
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Untitled
Abstract: No abstract text available
Text: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs
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QED121,
QED122,
QED123
880nm
QED122
QED123
QSD122/QSD123/QSD124
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qed12x
Abstract: QSB34 ul217 QED121 QED123UL
Text: PLASTIC INFRARED LIGHT EMITTING DIODE QED123UL PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE NOTES: 1. Dimensions for all drawings are in inches (mm).
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QED123UL
UL217
QSB34
qed12x
QSB34
QED121
QED123UL
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QRB1134
Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6
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1N6264
1N6265
BPW36
BPW37
BPW38
CNY28
CNY29
CNY36
CQX14
CQX15
QRB1134
H22A2
QRB1113
QRB1114
QRD1114
LED55C
QSE113
QSC112
QSE157
QSE158
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L14F1 phototransistor datasheet
Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED634
QED121
L14F1 phototransistor datasheet
L14F1 PHOTOTRANSISTOR
phototransistor 3 pin L14F1
Phototransistor L14F1
l14f1 ir phototransistor
T1 L14F1
Phototransistor L14G3
L14F1 PHOTOTRANSISTOR PIN
opto transistor moc 12v
LED 55 with L14F1 phototransistor
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QED234
Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Text: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED634
QED121
QED234
ir diode 940 nm
sidelooker DIODE
power diode package
QEC121
QED233
QEC112
QEC113
QEC122
QEC123
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4n35 optocoupler spice model
Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM
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TS-16949
ISO-14001,
4n35 optocoupler spice model
L14F1 phototransistor datasheet
MOC3043-M spice model
H11F1 SPICE MODEL
h11D1 spice
MOC3010 spice
L14F1 PHOTOTRANSISTOR
slotted optocouplers
DARLINGTON phototransistor l14f1
spice MOC3011
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MAN6760 function
Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Text: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available
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MAN6730
MAN6760
MAN6880
MAN6940
MAN6975
MAN6R10
MAN73A
MAN8010
MAN8240
MAN8610
MAN6760 function
KAR00042
KAR00044
KOI00003
KAT00022A
kva00272
KAT00049
Fairchild kar00042
KAR00044A
KDT00026
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L14F1 phototransistor datasheet
Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Text: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions
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SE-171
L14F1 phototransistor datasheet
l14f1 ir phototransistor
PIN CONFIGURATION OF L14F1
L14F1 PHOTOTRANSISTOR
Phototransistor L14F1
MEXICO TRANSMISSIVE SENSOR
l14f1 phototransistor data
opto transistor moc
CQX 89
Phototransistor L14G3
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QED223
Abstract: diode Sr 203
Text: Plastic Light Emitting Diodes T-1 3 mm Diode Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF (V) max IR @ 5 V VR (µA)
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
QED633
QED223
diode Sr 203
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Untitled
Abstract: No abstract text available
Text: ÆÜI AIGaAs INFRARED EMITTING DIODE OPTDELECTROHICS QED121/122/123 DESCRIPTION PACKAGE DIMENSIONS T h e Q E D 1 2 X is an 8 8 0 A IG a A s L E D e n c a p s u la te d in a c le a r, p e a c h tin ted , plas tic T-13/4 p a c k a g e . FEATURES • T ig h t p ro d u c tio n Ee d istrib u tio n .
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QED121/122/123
Q1D121/122/123
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Untitled
Abstract: No abstract text available
Text: _ 1 AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED121/122/123 PACKAGE DIMENSIONS DESCRIPTION The Q E D 12X is an 880 AIGaAs LED encapsulated in a clear, peach tinted, plastic T-1% package. FEATURES • Tight production Ee distribution. ■ Steel lead fram es for im proved reliability in solder
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QED121/122/123
SD12X
ST2132
4bbfl51
000bP74
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24CT
Abstract: No abstract text available
Text: Fa OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The Q E C 12X is an 88 0 nm AIG aA s LED en capsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution. ■ Steel lead fram es for im proved reliability in solder
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QEC121/122
QSC11X
ST2131
24CT
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES T-1 3 mm Part Number 76 NOM jr~r le Angle @ 1/2 Power Radiant Intensity min max units V F/IF (V)l(mA) max I r/V r (ViA)/(V) max Notes 940 nm GaAs \ .052(1 32) .032 (.082) Emission JT | QEC112 ±8° 6
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QEC112
QEC113
QEC121
QEC122
QEC123
QED233
QED234
53IODES
100mA
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LM 8105
Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Text: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
6N139
740L6001
740L6010
LM 8105
SD318
AN6610
5354A
B1134
SE773
CPL-2503
B1133
SE158
6363t
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Untitled
Abstract: No abstract text available
Text: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)
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QEC112
QEC113
QEC121
QEC122
QEC123
T-13/4
QED233
QED234
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QED122
Abstract: QEC121 QEC122 QED121 QED123 diode 465 nm 5 mm tinted radiant energy
Text: r*T | m m É éiìwiììbA ^ S ü J H i OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution.
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QEC121/122
ST2131
QEC12X
QSC11X
QED123
mW/10Â
mA1671
QED122
QEC121
QEC122
QED121
diode 465 nm 5 mm tinted
radiant energy
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se113
Abstract: No abstract text available
Text: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135
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H22A2
H22A3
H22A4
H22A5
H22A6
1N6264
1N6265
1N6266
BPW36
BPW37
se113
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Untitled
Abstract: No abstract text available
Text: GEO OPTOELECTRONICS PLASTIC INFRARED LIGHT EM ITTIN G DIODES E m is sio n T-1 3 mm A n g le @ Part Num ber •e R a d ia n t In te n s ity 1/2 P o w e r V F/ I F ■r ' V r V /(m A | ( mA )/ i v i m in max u n its m ax max 30 mW/sr 1.50/20 10/5 1 — mW/sr
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QEC112
QEC113
QEC121
QEC122
QEC123
T-13/4
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MAN-8610
Abstract: CNW82 HLMPD150A CNY17GF-1
Text: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
740L6000
740L6001
740L6011
MAN-8610
CNW82
HLMPD150A
CNY17GF-1
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