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    Abstract: MMBT3906 MMBT4125 VC820
    Text: ¡ SAMSUNG S E M I C ON D U CT OR INC _ IME MMBT4125 D | 711,4142 QG072b7 1 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C> Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 00072fc7 MMBT4125 MMBT3906 OT-23 100MHz 100KHz 100mA, 300/js, semico VC820

    sot23 1fe

    Abstract: la 4142
    Text: ¡SAMSUNG S EMI CONDUCTOR INC _ IME MMBT4125 D | 711,4142 QG072b7 1 | PNP EPITAXIAL SILICON TRANSISTOR T -a q -ñ GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C> Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage


    OCR Scan     		PDF QG072b7 MMBT4125 OT-23 sot23 1fe la 4142