TD2405
Abstract: No abstract text available
Text: BULLETIN 603A CRYDOM SERIES T r I r Triac Output Solid-State Relay 5 Thru 25 Amp AC Output C R Y D S 00121 Series T/T riac Output Solid-State, Photo-Isolated Power Relays SPST* • Low Cost • Zero Voltage Switching • U.L. Recognized, CSA Certified • VDE Conformance
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dallas 2501
Abstract: DALLAS SEMICONDUCTOR 2501 ultrasonic transducer TM-1 TLV2231 TLV2231Y SOT-23 "vhz" AI mm sot 25
Text: TLV2231, TLV2231Y Advanced LinCMOS RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS S L O S 1 5 8 A - J U N E 1 9 9 6 - R E V IS E D J A N U A R Y 199 7 • Output Swing Includes Both Supply Rails • Low Noise . . . 15 nV/VHz Typ at f = 1 kHz • Low Input Bias C u rre n t. . . 1 pA Typ
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TLV2231,
TLV2231Y
SLOS158A-JUNE
TLV2231
TLV2231Y
SLOS158A
4073253-3/A
dallas 2501
DALLAS SEMICONDUCTOR 2501
ultrasonic transducer TM-1
SOT-23 "vhz"
AI mm sot 25
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v2252a
Abstract: TLV2252 v2252a 8 pin ic TLV2252A TLV2252AID TLV2252AIP TLV2252AIPWLE TLV2252ID TLV2252IDR TLV2252IP
Text: TLV2252, TLV2252A, TLV2252Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, DUAL OPERATIONAL AMPLIFIERS ^ BER 1994 • • • • Common-Mode Input Voltage Range Includes Negative Rail Low Input Offset Voltage
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TLV2252,
TLV2252A,
TLV2252Y
SLOS138
TLV2252
TLV2252A
-60E6
-60E6
86E-6
0E-18)
v2252a
v2252a 8 pin ic
TLV2252AID
TLV2252AIP
TLV2252AIPWLE
TLV2252ID
TLV2252IDR
TLV2252IP
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0E-18
Abstract: TLV2254 TLV2254A TLV2254AID TLV2254AIN TLV2254AIPWLE TLV2254ID TLV2254IDR TLV2254IN TLV2254Y
Text: TLV2254, TLV2254A, TLV2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, QUAD OPERATIONAL AMPLIFIERS _ SLOS14D- DECEMBER 1994 Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/VHi Typ at f = 1 kHz
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TLV2254,
TLV2254A,
TLV2254Y
SLOS14D-
TLV2254
TLV2254A
-60E6
86E-6
0E-18}
0E-15
0E-18
TLV2254AID
TLV2254AIN
TLV2254AIPWLE
TLV2254ID
TLV2254IDR
TLV2254IN
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transistor fb 31n
Abstract: TLV2254 TLV2254A TLV2254AID TLV2254AIN TLV2254AIPWLE TLV2254ID TLV2254IDR TLV2254IN TLV2254Y
Text: TLV2254, TLV2254A, TLV2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, QUAD OPERATIONAL AMPLIFIERS SLOS140 - DECEMBER 1994 Common-Mode Input Voltage Range Includes Negative Rail Low Input Offset Voltage 850 |iV Max at TA = 25°C Wide Supply Voltage Range
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TLV2254,
TLV2254A,
TLV2254Y
SLOS140
TLV2254
TLV2254A
-60E6
-60E6
86E-6
0E-18)
transistor fb 31n
TLV2254AID
TLV2254AIN
TLV2254AIPWLE
TLV2254ID
TLV2254IDR
TLV2254IN
TLV2254Y
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Untitled
Abstract: No abstract text available
Text: ü i h a r r u j , c o n d u c o » RHRG7540, RHRG7550, RHRG7560 is 75A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperlast with Soft R ecovery.<55ns • Operating Tem p eratu re. +175°C
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RHRG7540,
RHRG7550,
RHRG7560
O-247
RHRG7550
RHRG7560
00A/H«
RHRG7S50,
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.dd2
Abstract: TLV2731 TLV2731CDBV TLV2731IDBV TLV2731Y
Text: TLV2731, TLV2731Y Advanced LinCMOS RAIL-TO-RAIL LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS198 - AUGUST 1997 • Output Swing Includes Both Supply Rails • Low Noise . . . 15 nV/VHz Typ at f = 1 kHz • Low Input Bias C u rre n t. . . 1 pA Typ • Fully Specified for Single-Supply 3-V and
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TLV2731,
TLV2731Y
SLOS198
TLV2731
OT-23
.dd2
TLV2731CDBV
TLV2731IDBV
TLV2731Y
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Rlp5N08le
Abstract: No abstract text available
Text: 4302E71 0054043 100 • H arris May 1992 HAS RLP 5 N 08 LE Current Limited ESD Protected N-Channel Enhancem ent-Mode Power Field-Effect Transistor Features Package TO -220A B TOP VIEW • 5 .5 A , 8 0 V • R D S O N . 0 . 1 2 0
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4302E71
-220A
Rlp5N08le
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RLP5N08LE
Abstract: rlp5n08
Text: RLP5N08LE HARRIS M ay 1 992 Current Limited ESD Protected N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package • 5.5A, 80V T O -2 2 0 A B T O P V IE W • r DS 0 N . 0.12il • iL im it. 5.5A to 8.5A at + 1 50OC
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RLP5N08LE
RLP5N08LE
rlp5n08
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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TLC2252A1
Abstract: tlc22621 TLC2252 TLC2252A TLC2252AID TLC2252AIP TLC2252CD TLC2252CPWLE TLC2252ID TLC2252Y
Text: TLC2252, TLC2252A, TLC2252Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, DUAL OPERATIONAL AMPLIFIERS SLOS139-DECEMBER 1994 C o m m on -M ode Input Voltage Range Includes N egative Rail • O utp ut S w ing inclu des Both Supply Ralls
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TLC2252,
TLC2252A,
TLC2252Y
SLOS139-DECEMBER
TLC2252
TLC2252A
-60E6
-60E6
86E-6
686E-9
TLC2252A1
tlc22621
TLC2252AID
TLC2252AIP
TLC2252CD
TLC2252CPWLE
TLC2252ID
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PDF
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Untitled
Abstract: No abstract text available
Text: m CA3078 HARRIS S E M I C O N D U C T O R March1993 Micropower Operational Amplifier Features Description • Low Standby Power. As Low As 700nW The CA3078 and CA3078A are high gain monolithic operational amplifiers which can deliver milliamperes of
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CA3078
700nW
CA3078
CA3078A
CA3078,
CA3078A
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tlc22541
Abstract: 2SC2030 std 15007 TLC2254 0E-18 TLC2254A TLC2254AID TLC2254CD TLC2254CN TLC2254CPWLE
Text: TLC2254, TLC2254A, TLC2254Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW POWER, QUAD OPERATIONAL AMPLIFIERS SLOS142 - DECEMBER 1994 Common-Mode Input Voltage Range Includes Negative Rail Low Input Offset Voltage 850 iV Max at TA = 25°C (TLC2254A Macromodel Included
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TLC2254,
TLC2254A,
TLC2254Y
SLOS142
TLC2254
TLC2254A
-60E6
-60E6
86E-6
100E-6
tlc22541
2SC2030
std 15007
0E-18
TLC2254AID
TLC2254CD
TLC2254CN
TLC2254CPWLE
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TB23P06V
Abstract: TB23P 81 210 w 25 is which transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB23P06V TMOS V Power Field Effect Transistor D2PAK for Surface Mount Motorola Pr»f«rr*d Dovtce TMOS POWER FET 23 AMPERES 60 VOLTS ROS on = 0.120 OHM P-Channel Enhancement-Mode Silicon Gate
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TB23P06V
0E-05
0E-04
0E-03
0E-02
0E-01
TB23P06V
TB23P
81 210 w 25 is which transistor
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R-T curves RJC
Abstract: FLUKE 381 AN1025 AN-569 DV240 NDS9956 tesec DV240 fluke 52 Mosfet DF 50
Text: N 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power dissipation is determined by the maximum junction temperature rating, the ambient temperature, and the junction-to-ambient
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OT-23)
OT-23
R-T curves RJC
FLUKE 381
AN1025
AN-569
DV240
NDS9956
tesec DV240
fluke 52
Mosfet DF 50
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Untitled
Abstract: No abstract text available
Text: OPA129 B U R R -B R O W N Ultra-Low Bias Current DifeP OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • ULTRA-LOW BIAS CURRENT: 10OTA max LOW OFFSET: 2mV max LOW DRIFT: 10|iV/°C max HIGH OPEN-LOOP GAIN: 94dB min
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OPA129
10OTA
15nV/VHz
10kHz
OPA129
17313LS
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AD8010s
Abstract: jr77
Text: 200 m AO utput Current High Speed Amplifier ANALOG DEVICES AD8010 FEATURES 200 m A o f O u t p u t C u r r e n t 9 n Load SFDR - 5 4 dBe @ 1 M Hz CO NNECTION D IA G R A M S 8-Lead DI P and SOI C D i f f e r e n t i a l Gai n Er r or 0.04%, f = 4.43 M Hz D i f f e r e n t i a l Phase E r r o r 0.06°, f = 4.43 MHz
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AD8010
16-Lead
AD8010s
jr77
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sg4501
Abstract: SG3501AJ SG4501N SG2501 SG1501AT SG1501 SG3501 SG2501 VOLTAGE REGULATOR DUAL SG1501AJ SG2501AT
Text: SG1501AJSG2501A/SG3501A/SG4501 SILICON EENERAL L IN E A R IN T E G R A T E D C IR C U IT S DUAL VOLTAGE TRACKING REGULATOR DESCRIPTION FEATURES This circuit is adual polarity tracking regulator designed to provide balanced positive and negative output voltages at currents up to
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SG1501A/SG2501A/SG3501A/SG4501
100mA.
sg4501
SG3501AJ
SG4501N
SG2501
SG1501AT
SG1501
SG3501
SG2501 VOLTAGE REGULATOR DUAL
SG1501AJ
SG2501AT
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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R-T curves RJC
Abstract: AN1028 AN-569 DV240 NDS9956
Text: N AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Discrete POWER & Signal Technologies 2. Theory Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong When a device operates in a system under the steady-state condition, the maximum power
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AN1028
OT-223
OT-223
R-T curves RJC
AN1028
AN-569
DV240
NDS9956
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R-T curves RJC
Abstract: tesec DV240 AN-569 DV240 NDS9956 AN1025 SuperSOTTM -3 Fluke 16 thermocouple FLUKE 52
Text: AN1025 April, 1996 Maximum Power Enhancement Techniques for SuperSOTTM-3 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices.
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AN1025
OT-23)
R-T curves RJC
tesec DV240
AN-569
DV240
NDS9956
AN1025
SuperSOTTM -3
Fluke 16 thermocouple
FLUKE 52
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BYW51
Abstract: 200G BYW51-200
Text: BYW51−200 SWITCHMODEt Power Rectifier This state−of−the−art device is designed for use in switching power supplies. Features • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−220 Package
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BYW51-200
O-220
BYW51-200/D
BYW51
200G
BYW51-200
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tesec DV240
Abstract: AN1029 AN-569 DV240 NDS9956 213 so8
Text: AN1029 April, 1996 Maximum Power Enhancement Techniques for SO-8 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus
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AN1029
tesec DV240
AN1029
AN-569
DV240
NDS9956
213 so8
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R-T curves RJC
Abstract: motorola application note AN-569 tesec DV240 AN1028 AN-569 DV240 NDS9956
Text: AN1028 April, 1996 Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs Alan Li, Brij Mohan, Steve Sapp, Izak Bencuya, Linh Hong 1. Introduction As packages become smaller, achieving efficient thermal performance for power applications requires that the designers employ new methods of meliorating the heat flow out of devices. Thus
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Original
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AN1028
OT-223
OT223
R-T curves RJC
motorola application note AN-569
tesec DV240
AN1028
AN-569
DV240
NDS9956
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PDF
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