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rjh60d7 Abstract: RJH60D7DPK Text: Preliminary Datasheet RJH60D7DPK Silicon N Channel IGBT Application: Inverter R07DS0165EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJH60D7DPK R07DS0165EJ0300 PRSS0004ZE-A rjh60d7 RJH60D7DPK

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Abstract: RJH60D7DPK
Text: Preliminary Datasheet RJH60D7DPK Silicon N Channel IGBT Application: Inverter R07DS0165EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

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RJH60D7DPK R07DS0165EJ0300 PRSS0004ZE-A rjh60d7 RJH60D7DPK