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    RJH30

    Abstract: RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A
    Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		PDF RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A

    RJH30

    Abstract: RJH30H2
    Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		PDF RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2