RJH30H Search Results

RJH30H Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJH30H2DPK-M0#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJH30H1DPP-M0#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube

RJH30H Price and Stock

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Rochester Electronics LLC RJH30H1DPP-M1-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJH30H1DPP-M1-T2	Bulk			163	1 - 10 - 100 - 1000 $1.85 10000 $1.85	Buy Now
Rochester Electronics LLC RJH30H2DPK-M2-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJH30H2DPK-M2-T2	Bulk			82	1 - 10 - 100 $3.66 1000 $3.66 10000 $3.66	Buy Now
Renesas Electronics Corporation RJH30H1DPP-M1#T2 RJH30H1DPP-M1#T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJH30H1DPP-M1#T2		10,841		180	1 - 10 - 100 - 1000 $1.8875 10000 $1.8875	Buy Now
Rochester Electronics	RJH30H1DPP-M1#T2		10,841		1	1 $1.78 10 $1.78 100 $1.67 1000 $1.51 10000 $1.51	Buy Now
Renesas Electronics Corporation RJH30H2DPK-M2#T2 RJH30H2DPK-M2#T2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJH30H2DPK-M2#T2		1,140		87	1 - 10 - 100 $4.1375 1000 $3.7375 10000 $3.7375	Buy Now
Rochester Electronics	RJH30H2DPK-M2#T2		1,140		1	1 $3.52 10 $3.52 100 $3.31 1000 $2.99 10000 $2.99	Buy Now
Renesas Electronics Corporation RJH30H1DPP-M0#T2 Insulated Gate Bipolar Transistor '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	RJH30H1DPP-M0#T2		131		1	1 $1.78 10 $1.78 100 $1.67 1000 $1.51 10000 $1.51	Buy Now

RJH30H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJH30H1 Abstract: RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	PDF	RJH30H1DPP-M0 O-220FL R07DS0463EJ0200 PRSS0003AF-A O-220FL) RJH30H1 RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching
RJH30 Abstract: RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	PDF	RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2 rjh30h2dpk rjh30h RJH30H2DPK-M0 PRSS0004ZH-A
RJH30 Abstract: RJH30H2 Text: Preliminary Datasheet RJH30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0464EJ0200 Rev.2.00 Jun 15, 2011 Features •     Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ	Original	PDF	RJH30H2DPK-M0 R07DS0464EJ0200 PRSS0004ZH-A RJH30 RJH30H2
RJH30H1 Abstract: No abstract text available Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.	Original	PDF	RJH30H1DPP-M0 R07DS0463EJ0200 O-220FL PRSS0003AF-A O-220FL) RJH30H1