Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJH30H1 Search Results

    RJH30H1 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJH30H1DPP-M0#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube Visit Renesas Electronics Corporation
    SF Impression Pixel

    RJH30H1 Price and Stock

    Rochester Electronics LLC RJH30H1DPP-M1-T2

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJH30H1DPP-M1-T2 Bulk 163
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85
    • 10000 $1.85
    		Buy Now

    Renesas Electronics Corporation RJH30H1DPP-M1#T2

    RJH30H1DPP-M1#T2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RJH30H1DPP-M1#T2 10,841 180
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.8875
    • 10000 $1.8875
    		Buy Now
    Rochester Electronics RJH30H1DPP-M1#T2 10,841 1
    • 1 $1.78
    • 10 $1.78
    • 100 $1.67
    • 1000 $1.51
    • 10000 $1.51
    		Buy Now

    Renesas Electronics Corporation RJH30H1DPP-M0#T2

    Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RJH30H1DPP-M0#T2 131 1
    • 1 $1.78
    • 10 $1.78
    • 100 $1.67
    • 1000 $1.51
    • 10000 $1.51
    		Buy Now

    RJH30H1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJH30H1

    Abstract: RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching
    Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJH30H1DPP-M0 O-220FL R07DS0463EJ0200 PRSS0003AF-A O-220FL) RJH30H1 RJH30 RJH30H1DPP-M0 PRSS0003AF-A RJh30H Silicon N Channel IGBT High Speed Power Switching

    RJH30H1

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH30H1DPP-M0 Silicon N Channel IGBT High speed power switching R07DS0463EJ0200 Rev.2.00 Jun 15, 2011 Features •      Trench gate and thin wafer technology G6H-II series High speed switching: tr =80 ns typ., tf = 150 ns typ.


    Original     		PDF RJH30H1DPP-M0 R07DS0463EJ0200 O-220FL PRSS0003AF-A O-220FL) RJH30H1