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    R1LV0408C Price and Stock

    Rochester Electronics LLC R1LV0408CSB-7LI-D0

    STANDARD SRAM, 512KX8
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    Rochester Electronics LLC R1LV0408CSB-5SC-D0

    STANDARD SRAM, 512KX8
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    Rochester Electronics LLC R1LV0408CSB-7LC-D0

    STANDARD SRAM, 512KX8
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    Rochester Electronics LLC R1LV0408CSB-5UC-D0

    STANDARD SRAM, 512KX8
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    Rochester Electronics LLC R1LV0408CSB-5UI-D0

    STANDARD SRAM, 512KX8
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    R1LV0408C Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    R1LV0408C-C Renesas Technology 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408C-C Series Renesas Technology 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408C-I Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408C-I Series Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSA-5SC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSA-5SI Hitachi Semiconductor Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSA-7LC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSA-7LI Hitachi Semiconductor Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSB-5SC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSB-5SI Hitachi Semiconductor Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSB-5SI Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSB-7LC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSB-7LI Hitachi Semiconductor Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSP-5SC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSP-5SI Hitachi Semiconductor Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSP-5SI Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSP-7LC Renesas Technology 4 M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSP-7LI Hitachi Semiconductor Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSP-7LI Renesas Technology Wide Temperature Range Version 4M SRAM (512-kword x 8-bit) Original PDF
    R1LV0408CSP-7LI#S0 Renesas Technology Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 70NS 32SOP Original PDF

    R1LV0408C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    R1LV0408C-I

    Abstract: R1LV0408CSA-5SI R1LV0408CSA-7LI R1LV0408CSB-5SI R1LV0408CSB-7LI R1LV0408CSP-5SI R1LV0408CSP-7LI
    Text: R1LV0408C-I Series Wide Temperature Range Version 4M SRAM 512-kword x 8-bit REJ03C0098-0200Z Rev. 2.00 May.25.2004 Description The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process


    Original     		R1LV0408C-I 512-kword REJ03C0098-0200Z 32-pin 32-pin R1LV0408CSA-5SI R1LV0408CSA-7LI R1LV0408CSB-5SI R1LV0408CSB-7LI R1LV0408CSP-5SI R1LV0408CSP-7LI PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV0408C-I Series Wide Temperature Range Version 4 M SRAM 512-kword x 8-bit REJ03C0098-0100Z Rev. 1.00 Jul.24.2003 Description The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process


    Original     		R1LV0408C-I 512-kword REJ03C0098-0100Z 32-pin PDF

    R1LV0408CSP-5SC

    Abstract: r1lv0408c R1LV0408C-C R1LV0408CSA-5SC R1LV0408CSA-7LC R1LV0408CSB-5SC R1LV0408CSB-7LC R1LV0408CSP-7LC
    Text: R1LV0408C-C Series 4M SRAM 512-kword x 8-bit REJ03C0099-0200Z Rev. 2.00 May.25.2004 Description The R1LV0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process


    Original     		R1LV0408C-C 512-kword REJ03C0099-0200Z 32-pin 32-pin R1LV0408CSP-5SC r1lv0408c R1LV0408CSA-5SC R1LV0408CSA-7LC R1LV0408CSB-5SC R1LV0408CSB-7LC R1LV0408CSP-7LC PDF

    R1LV0408C-C

    Abstract: No abstract text available
    Text: R1LV0408C-C Series 4 M SRAM 512-kword x 8-bit REJ03C0099-0100Z Rev. 1.00 Jul.24.2003 Description The R1LV0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process


    Original     		R1LV0408C-C 512-kword REJ03C0099-0100Z 32-pin PDF

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


    Original     		D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash PDF

    HM2V8100TTI5SE

    Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI
    Text: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns


    Original     		TSOP32 sTSOP32 M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DVP-70LLI M5M5V108DFP-70H HM2V8100TTI5SE HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI PDF

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original     		CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 PDF

    HM628100

    Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006
    Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA


    Original     		Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 PDF

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


    Original     		AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70 PDF

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN PDF

    R1LV0408CSP-5SC

    Abstract: r1lv0408c R1LV0408CSB-7LC R1LV0408C-C R1LV0408CSA-5SC R1LV0408CSA-7LC R1LV0408CSB-5SC R1LV0408CSP-7LC
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    R1LV0408C-I

    Abstract: r1lv0408c R1LV0408CSA-5SI R1LV0408CSA-7LI R1LV0408CSB-5SI R1LV0408CSB-7LI R1LV0408CSP-5SI R1LV0408CSP-7LI
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    DSTINIs400

    Abstract: 2N7002 AM29LV081B-70EC BAT54S BSS84 CR1632 DS80C400 DS80C410 DS80C410-FNY R1LV0408CSB-7LC
    Text: DSTINIm410 Networked Micro Evaluation Board www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DSTINIm410 is a fully assembled and tested circuit board that evaluates the DS80C410 network microcontroller. In addition to the DS80C410, the DSTINIm410 includes a real-time clock, 1MB flash,


    Original     		DSTINIm410 DSTINIm410 DS80C410 DS80C410, 144-pin DSTINIs400 Pin45 2N7002 AM29LV081B-70EC BAT54S BSS84 CR1632 DS80C400 DS80C410-FNY R1LV0408CSB-7LC PDF

    Untitled

    Abstract: No abstract text available
    Text: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their


    Original     		AN1012 PDF

    M5M5256DFP-70LL*bm

    Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI
    Text: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns


    Original     		M5M5256DFP-70G M5M5256DVP-70G M5M5256DVP-70XG M5M5256DVP-70GI M5M5256DFP-55LL M5M5256DFP-55XL M5M5256DFP-70LL M5M5256DFP-70XL M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70LL*bm HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI PDF

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety PDF

    14.7456MHz crystal

    Abstract: TINI400 BSS84 1Mb static ram an612 DSTINIs400 2N7002 AM29LV081B-70EC BAT54S DS80C400
    Text: DSTINIm400 Networked Microcontroller Evaluation Board www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DSTINIm400# is a fully assembled and tested circuit board that evaluates the DS80C400 network microcontroller. In addition to the DS80C400, the DSTINIm400# includes a real-time clock, 1MB flash,


    Original     		DSTINIm400 DSTINIm400# DS80C400 DS80C400, 144-pin DSTINIs400 Pin45 14.7456MHz crystal TINI400 BSS84 1Mb static ram an612 2N7002 AM29LV081B-70EC BAT54S PDF