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Renesas Electronics Corporation R1Q3A3636BBG33YB0 Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165
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ComSIT USA	R1Q3A3636BBG33YB0		38			1 - 10 - 100 - 1000 - 10000 -	Get Quote

R1Q3A3636B Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
R1Q3A3636B		Renesas Technology	36-Mbit QDR II SRAM 4-word Burst		Original	PDF
R1Q3A3636BBG-33R		Renesas Technology	36-Mbit QDR II SRAM 4-word Burst		Original	PDF
R1Q3A3636BBG-40R		Renesas Technology	36-Mbit QDR II SRAM 4-word Burst		Original	PDF
R1Q3A3636BBG-50R		Renesas Technology	36-Mbit QDR II SRAM 4-word Burst		Original	PDF

R1Q3A3636B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0004 Preliminary Rev. 0.04 Oct.22, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS	Original	R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit REJ03C0342-0004 R1Q3A3636B 576-word 36-bit, R1Q3A3618B 152-word 18-bit, R1Q3A3609B	PDF
Untitled Abstract: No abstract text available Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0001 Preliminary Rev. 0.01 Jan. 31, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS	Original	R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit REJ03C0342-0001 R1Q3A3636B 576-word 36-bit, R1Q3A3618B 152-word 18-bit, R1Q3A3609B	PDF
2L TRANSISTOR Abstract: R1Q3A3618BBG-33R R1Q3A3636B R1Q3A3636BBG-33R R1Q3A3636BBG-40R R1Q3A3636BBG-50R R1Q3A3636BBG-60R Text: R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit QDR II SRAM 4-word Burst REJ03C0342-0003 Preliminary Rev. 0.03 Apr.11, 2008 Description The R1Q3A3636B is a 1,048,576-word by 36-bit, the R1Q3A3618B is a 2,097,152-word by 18-bit, and the R1Q3A3609B is a 4,194,304-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS	Original	R1Q3A3636B/R1Q3A3618B/R1Q3A3609B 36-Mbit REJ03C0342-0003 R1Q3A3636B 576-word 36-bit, R1Q3A3618B 152-word 18-bit, R1Q3A3609B 2L TRANSISTOR R1Q3A3618BBG-33R R1Q3A3636BBG-33R R1Q3A3636BBG-40R R1Q3A3636BBG-50R R1Q3A3636BBG-60R	PDF
ieee1149.1 cypress Abstract: P-LBGA165-15x17-1 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
R1Q2A3618BBG-40R Abstract: R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R Text: 90nm 36Mbit QDR -II & DDR-II SRAMs High-speed memory for Gigabit Ethernet networking The expanded range of standardscompliant, fast SRAMs in advanced 90nm technology offers more design solutions for high-speed packet buffering and packet look-up in Gigabit Ethernet networking	Original	36Mbit 36Mbit R1Q2A3618BBG-40R R1Q3A3636BBG-60R R1Q2A3636BBG R1Q2A3618BBG-50R R1Q2A3618BBG-60R R1Q3A3618BBG-33R	PDF
HN58V1001TI-25E Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI Text: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,	Original	REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI	PDF