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    RESISTANCE VALUE 20N60S5 Search Results

    RESISTANCE VALUE 20N60S5 Result Highlights (5)

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    SK999Z Coilcraft Inc Jumbo Super Kit, new values, refills, backorders Visit Coilcraft Inc
    C463 Coilcraft Inc Designer's Kit, Coupled Inductor Essential Values, RoHS Visit Coilcraft Inc
    PS7804-1A-A Renesas Electronics Corporation Low On-state Resistance, , / Visit Renesas Electronics Corporation
    PS7804-1A-F3-A Renesas Electronics Corporation Low On-state Resistance, , / Visit Renesas Electronics Corporation
    PS710BL-1A-E3-A Renesas Electronics Corporation Low On-state Resistance, , / Visit Renesas Electronics Corporation

    RESISTANCE VALUE 20N60S5 Datasheets Context Search

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    20N60S5

    Abstract: 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20N60S5 20N60S5 TO247 SPW20N60S5 equivalent 20n60s5 power transistor 20n60 20n60s5 datasheet TO247 package dissipation SPW20N60S5 20n60s

    SPW20N60S5

    Abstract: No abstract text available
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 SPW20N60S5

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5

    20n60s5

    Abstract: SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s

    transistor 20N60s5

    Abstract: SPW20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5

    20n60s5

    Abstract: 20n60 transistor 20N60s5 RG-57 s4751 SPP20N60S5 20N60S Q67040-S4751 SPB20N60S5
    Text: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original
    PDF SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60 transistor 20N60s5 RG-57 s4751 SPP20N60S5 20N60S Q67040-S4751 SPB20N60S5

    20n60s5

    Abstract: Q67040-S4751 SPP20N60S5
    Text: SPP20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 Q67040-S4751 SPP20N60S5

    20n60s

    Abstract: 20n60s5 SPB20N60S5 SPP20N60S5 PG-TO263-3-2 20n60s5 power transistor
    Text: SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO263 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


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    PDF SPB20N60S5 PG-TO263 Q67040-S4171 20N60S5 20n60s 20n60s5 SPB20N60S5 SPP20N60S5 PG-TO263-3-2 20n60s5 power transistor

    SPP20N60S5

    Abstract: No abstract text available
    Text: SPP20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5

    20n60s

    Abstract: No abstract text available
    Text: SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPB20N60S5 P-TO263-3-2 20N60S5 SPB20N60S5 Q67040-S4171 20n60s

    Untitled

    Abstract: No abstract text available
    Text: SPP20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5

    20N60S5 TO247

    Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
    Text: SPW20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original
    PDF SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 009-134-A O-247 20N60S5 TO247 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Text: SPP20N60S5 SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original
    PDF SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5

    75V-8V

    Abstract: No abstract text available
    Text: SPP20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original
    PDF SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5 75V-8V

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Text: SPW20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5

    20n60s5

    Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor
    Text: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original
    PDF SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4751 Q67040-S4171 20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor

    SPW20N60S5

    Abstract: 20N60S5
    Text: SPW20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    PDF SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Text: SPW20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original
    PDF SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: SPW20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original
    PDF SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent
    Text: SPP20N60S5 SPB20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V • Improved periodic avalanche rating RDS(on) 0.19


    Original
    PDF SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent

    20N60S5

    Abstract: No abstract text available
    Text: SIEMENS SPW20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan
    PDF SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
    Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances


    OCR Scan
    PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor n60s5

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5
    Text: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances


    OCR Scan
    PDF SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20N60S5 transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5