2n3478
Abstract: RF Transistor s-parameter
Text: Test & Measurement Application Note 95-1 H S-Parameter Techniques for Faster, More Accurate Network Design http://www.hp.com/go/tmappnotes H Contents 1. Foreword and Introduction 2. Two-Port Network Theory 3. Using S-Parameters 4. Network Calculations with Scattering Parameters
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GE Transistor Manual
Abstract: transistor k 316 35820 transistor circuit design
Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing
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5988-0424EN
GE Transistor Manual
transistor k 316
35820
transistor circuit design
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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circuit diagram of GSM based home automation system
Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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mmic
Abstract: No abstract text available
Text: MMA-273336 27-33GHz 4W MMIC Power Amplifier Data Sheet July, 2012 Features: • 32 Frequency Range: 27 – 33 GHz P1dB: +36 dBm IM3 Level: -38 dBc @Po=20dBm/tone Gain: 22 dB Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω
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MMA-273336
27-33GHz
20dBm/tone
2800mA
27GHz
33GHz.
b27-33GHz
10mil
4350B
MMA273336
mmic
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gunn diode
Abstract: No abstract text available
Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description
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micro-x mhz ghz microwave
Abstract: ba 5888 MMIC Amplifier Micro-X GHZ micro-X Package
Text: BIPOLARICS, INC. Part Number BA6 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION DESCRIPTION AND APPLICATIONS: Bipolarics' BA6 is a high performance MMIC amplifier designed for general purpose use in 50Ω systems over a
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rf microwave amplifier with S Parameters
Abstract: BA2 capacitor BA11 02238
Text: BIPOLARICS, INC. Part Number BA2 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems
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MMIC Amplifier Micro-X
Abstract: GHZ micro-X Package BA11 rf microwave amplifier with S Parameters 03-198
Text: BIPOLARICS, INC. Part Number BA3 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.7 GHz in ceramic Micro-X - DC to 2.6 GHz in plastic packages • Suitable for 7V systems
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK V00.1004 PRODUCT APPLICATION NOTE Designing with the HMC454ST89 Amplifier Utilizing Small Signal S-parameters
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HMC454ST89
typically17
40dBm
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Untitled
Abstract: No abstract text available
Text: 8091 Microwave Technology Training System with LVDAMMW LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 02/2015 Microwave Technology Training System with LVDAM-MW, LabVolt Series, 8091 Table of Contents General Description
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ba1s
Abstract: GHZ micro-X Package macro-X ceramic MMIC Amplifier Micro-X
Text: BIPOLARICS, INC. Part Number BA1 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: DESCRIPTION AND APPLICATIONS: Bipolarics' BA1 is a high performance MMIC amplifier designed for general purpose use in 50Ω systems over a
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dBm01
ba1s
GHZ micro-X Package
macro-X ceramic
MMIC Amplifier Micro-X
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ba7 transistor
Abstract: MMIC Amplifier Micro-X Bipolarics BA11 sot-143 rf amplifier
Text: BIPOLARICS, INC. Part Number BA7 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Wide 3dB bandwidth - DC to 2.4 GHz in ceramic Micro-X - DC to 2.0 GHz in plastic packages • Suitable for 5V systems
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OT-143
OT-143J
ba7 transistor
MMIC Amplifier Micro-X
Bipolarics
BA11
sot-143 rf amplifier
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BA11
Abstract: MMIC Amplifier Micro-X GHZ micro-X ceramic Package
Text: BIPOLARICS, INC. Part Number BA8 CASCADABLE SILICON BIPOLAR MONOLITHIC MICROWAVE INTEGRATED AMPLIFIER PRODUCT SPECIFICATION FEATURES: • Very High Gain 32 dB typ at 100 MHz 22 dB typ at 1.0 GHz • Usable Gain to 5.0 GHz • Low Noise Figure 3.3 dB typ at 1.0 GHz
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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PN9000
Abstract: Aeroflex PN9000 PN9650 PN9712 pn9000 Absolute Phase Noise Measurements programmable rf delay line Digitizing pn9000 PN9000 PN9000* Microwave detector diodes PN9560 PN9000 additive noise
Text: AUTOMATIC PHASE NOISE MEASUREMENT SYSTEM PN9000 Tomorrow’s Phase Noise Testing Today COMSTRON An Ideal Measurement System for: • RF and Microwave Devices Simple and Fast Measurements Complete Frequency Coverage • Absolute Phase Noise Measurements • Crystal Oscillators, Synthesizers, VCO’s, DRO’s etc.
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PN9000
PN9000
PN9255
PN9230
PN9240
PN9100
PN9710
PN9711
PN9712
Aeroflex PN9000
PN9650
PN9712
pn9000 Absolute Phase Noise Measurements
programmable rf delay line
Digitizing pn9000
PN9000 PN9000* Microwave detector diodes
PN9560
PN9000 additive noise
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator
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HP RF TRANSISTOR GUIDE
Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS
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SG384/D
HP RF TRANSISTOR GUIDE
MRF286
MRF210305
MHL9838
mrf284
Curtice
linear amplifier 470-860
Base Station Drivers
motorola MRF
High frequency MRF transistor
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Untitled
Abstract: No abstract text available
Text: _ SILICON MMIC UPC1654A/B/P PRELIMINARY VHF-UHF Silicon Monolithic Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS SYMBOLS • BROADBAND PERFORMANCE: 10 to 1100 MHz PARAMETERS Vcc • INPUT AND OUTPUT MATCHED TO 50 £1 • AVAILABLE IN C HIP OR HERMETIC PACKAGE
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UPC1654A/B/P
UPC1654B
UPC1654A/B/P
34-6393/FAX
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RO4403
Abstract: ka band high power fet amplifier schematic OPAMP RF MODULATOR diode d1n4148 ka Band LNA, mixer Analog Voltage Variable Attenuator HMC346MS8G HMC346MS8G spice model HMC341 Voltage Controlled Attenuator
Text: v00.0703 HMC346MS8G PRODUCT NOTE Designing With The HMC346MS8G Voltage Variable Attenuator General Description The HMC346MS8G is an absorptive Voltage Variable Attenuator VVA in an 8 lead surface-mount package operating from DC - 8 GHz. It features an on-chip reference attenuator for use with an external OpAmp to
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HMC346MS8G
RO4403
ka band high power fet amplifier schematic
OPAMP RF MODULATOR
diode d1n4148
ka Band LNA, mixer
Analog Voltage Variable Attenuator
HMC346MS8G spice model
HMC341
Voltage Controlled Attenuator
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MRF873
Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and
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AN1526/D
AN1526
AN1526/D*
MRF873
j30 124 transistor
150 watt amplifier advantages and disadvantages
MRF650
transistor j334
AN1526
motorola rf book
transistor j326
power semiconductor 1973
Nippon capacitors
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MMA445133-02
Abstract: No abstract text available
Text: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power
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MGA-445343-99
64QAM)
MGA-445343-99
2N2907
IRF242
MMA445133-02
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MGA-445343-99
Abstract: MMA445133-02 6 ghz amplifier 20w
Text: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power
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MGA-445343-99
64QAM)
MGA-445343-99
2N2907
IRF242
MMA445133-02
6 ghz amplifier 20w
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Untitled
Abstract: No abstract text available
Text: MMA-174321-R4 17-43GHz, 0.1W Gain Block Data Sheet October, 2012 Features: • • • • • • • • Frequency Range: 17 – 43 GHz P1dB: 18 dBm Psat: 20 dBm Gain: 21 dB Vdd =4.5 V 3 V to 5 V Ids = 250 mA (150mA to 300mA) Input and Output Fully Matched to 50 Ω
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MMA-174321-R4
17-43GHz,
150mA
300mA)
MMA-174321
43GHz
10mil
4350B
MMA174321-R4
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