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    RF POWER TRANSISTOR H2 Search Results

    RF POWER TRANSISTOR H2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF POWER TRANSISTOR H2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H2 SOT-89 RF amplifier

    Abstract: GRM188R71H104KA01 sot-89 H3 uhf gp bjt START499D
    Text: DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor Preliminary Data Features • Excellent thermal stability ■ Frequency: 430 - 470 MHz ■ Supply voltage: 3.6 V ■ Output power: 29 dBm ■ Power gain: 19 dB ■ Efficiency: 52 %


    Original     		PDF DB-499D-470 START499D DB-499D-470 H2 SOT-89 RF amplifier GRM188R71H104KA01 sot-89 H3 uhf gp bjt START499D

    transistor marking G9

    Abstract: J4-81 j4 81 MARKING D8
    Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		PDF STAC3933 STAC3933 STAC177B transistor marking G9 J4-81 j4 81 MARKING D8

    Untitled

    Abstract: No abstract text available
    Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		PDF STAC4933 STAC4933 STAC177B

    Untitled

    Abstract: No abstract text available
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz


    Original     		PDF PD84006-E 2002/95/EC PowerSO-10RF PD84006-E

    NV SMD TRANSISTOR

    Abstract: AN1294 UHF rfid reader ma706
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■


    Original     		PDF PD84006-E 2002/95/EC PowerSO-10RF PD84006-E NV SMD TRANSISTOR AN1294 UHF rfid reader ma706

    PD85004

    Abstract: PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label
    Text: PD85004 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD85004 2002/95/EC OT-89 PD85004 PD85004 ST 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM39-X7R103K50C560 J-STD-020B PD84002 marking c7 sot-89 marking code murata label

    13786

    Abstract: L1320
    Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD84006L-E 2002/95/EC PD84006L-E 13786 L1320

    mc3363 application note

    Abstract: CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW
    Text: MC3363 Low Power Dual Conversion FM Receiver The MC3363 is a single chip narrowband VHF FM radio receiver. It is a dual conversion receiver with RF amplifier transistor, oscillators, mixers, quadrature detector, meter drive/carrier detect and mute circuitry. The


    Original     		PDF MC3363 MC3363 mc3363 application note CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW

    sot89 h3

    Abstract: .H2 MARKING SOT-89 marking h2 sot-89 marking .H2 sot89 PD85004
    Text: PD85004 RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 4 W with 17 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD85004 2002/95/EC OT-89 PD85004 sot89 h3 .H2 MARKING SOT-89 marking h2 sot-89 marking .H2 sot89

    Untitled

    Abstract: No abstract text available
    Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD84006L-E 2002/95/EC PD84006L-E

    PD85006

    Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PDF PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208

    PD85006

    Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
    Text: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package


    Original     		PDF PD85006-E Hz/13 2002/95/EC PowerSO-10RF PD85006-E PD85006 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J

    PD84002

    Abstract: J-STD-020B 3214W-1-103E EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K STMicroelectronics marking code date sot-89 L38L38
    Text: PD84002 RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD84002 2002/95/EC OT-89 PD84002 J-STD-020B 3214W-1-103E EXCELDRC35C GRM39-C0G3R3C50Z500 GRM39-X5R105K16D52K STMicroelectronics marking code date sot-89 L38L38

    transistor NF j1 marking code

    Abstract: PD84006L-E EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39
    Text: PD84006L-E RF power transistor, LDmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel


    Original     		PDF PD84006L-E 2002/95/EC PD84006L-E transistor NF j1 marking code EEVHB1V100P EXCELDRC35C J-STD-020B UHF rfid reader grm39

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1316N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an


    Original     		PDF MMRF1316N MMRF1316NR1

    PD84002

    Abstract: PD85006L-E smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR
    Text: PD85006L-E RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85006L-E 2002/95/EC PD85006L-E PD84002 smd transistor marking C14 SMD diode marking L39 3214W-1-103E EXCELDRC35C J-STD-020B PD85 TRANSISTOR AO SMD MARKING 0603 footprint FERRITE BEAD INDUCTOR

    STAC2942

    Abstract: STAC244 STAC2942B-I FERRITE TOROID R4270
    Text: STAC2942B-I RF power transistor HF/VHF/UHF N-channel MOSFETs Custom data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		PDF STAC2942B-I 2002/95/EC STAC2942B-I STAC244B STAC2942 STAC2942 STAC244 FERRITE TOROID R4270

    Untitled

    Abstract: No abstract text available
    Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original     		PDF SD4933 2002/95/EEC SD4933

    MRF477

    Abstract: MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H
    Text: MOTOROLA SC XSTRS/R F 4bE D L3ti72Sl4 □D'mb'iE 4 MOTOROLA MOTb T -S 3 -/Í SEMICONDUCTOR TECHNICAL DATA MRF477 T h e R F L in e 40 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILIC ON . . . designed prim arily for application as a high-power linear


    OCR Scan     		PDF fci3ti72S4 MRF477 T0-220AB L3b72S4 T-33-11 Pout-40WPEP MRF477 MRF477 equivalent mrf477 transistor 2 SC 2673 Q 1N4719 transistor MRF477 1S75 221A-04 RF POWER TRANSISTOR NPN 1270H

    2SC2097

    Abstract: transistor 91 330 T40E
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1


    OCR Scan     		PDF 2SC2097 2SC2097 30MHz 30MHz, T-40E transistor 91 330 T40E

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES


    OCR Scan     		PDF 2SC3630 2SC3630 520MHz, 150pF, 1500pF,

    TIC 136 Transistor

    Abstract: mrf475 tic 136 mrf475 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications


    OCR Scan     		PDF MRF475 TIC 136 Transistor mrf475 tic 136 mrf475 transistor

    MRF340

    Abstract: AMO 0210 transistor s97
    Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE » b3b?aS4 • SEMICONDUCTOR ■■ OOTMS^ 3 ■ T -3 3 -0 5 TECHNICAL DATA MRF340 The RF Line 8W 100-150 MHz RF POWER TRANSISTO R NPN SILICON RF POWER TRANSISTOR N PN S IL IC O N . . .designed p rim arily for use in V H F am plifiers w ith amplitude


    OCR Scan     		PDF MRF340 14bQ2 MRF340 AMO 0210 transistor s97

    2N3924

    Abstract: 2n3924 equivalent
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 2N3924 T h e R F Line NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . o p t i m iz e d A n n u l a r t r a n s i s t o r f o r l a r g e - s i g n a l p o w e r a m p l if i e r a n d d r iv e r a p p l i c a t i o n s t o 3 0 0 M H z .


    OCR Scan     		PDF 2N3924 2N3924 2n3924 equivalent