STAC177B Search Results

STAC177B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STAC2933 Abstract: No abstract text available Text: STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package	Original	PDF	STAC2933 STAC2933 STAC177B
Untitled Abstract: No abstract text available Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package	Original	PDF	STAC4933 STAC4933 STAC177B
STAC177B Abstract: No abstract text available Text: STAC150V2-350E RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Datasheet − production data Features • Operating frequencies up to 40.68 MHz ■ Excellent thermal stability ■ POUT = 350 W with 17 dB gain @ 40.68 MHz/150 V ■ Designed for class E operation	Original	PDF	STAC150V2-350E Hz/150 2002/95/EC1 STAC177B STAC150V2-350E
transistor marking G9 Abstract: J4-81 j4 81 MARKING D8 Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package	Original	PDF	STAC3933 STAC3933 STAC177B transistor marking G9 J4-81 j4 81 MARKING D8
Untitled Abstract: No abstract text available Text: STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ STAC air cavity packaging technology STAC package ■	Original	PDF	STAC2943 STAC177B STAC2943 SD2933,