RF TRANSISTOR 10-12 GHZ Search Results

RF TRANSISTOR 10-12 GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR 10-12 GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC5015 Abstract: 2SC5015-T1 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD 18 FEATURES • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low noise and high gain • Low voltage operation	Original	2SC5015 2SC5015-T1 PU10403EJ01V0DS 2SC5015 2SC5015-T1	PDF
NEC 1357 Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz	Original	2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN	PDF
1920A12 Abstract: No abstract text available Text: 1920A12 12 Watts PEP, 25 Volts, Class A 10 dB Gain Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS	Original	1920A12 1920A12	PDF
Untitled Abstract: No abstract text available Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	TGF2819-FL TGF2819-FL	PDF
Untitled Abstract: No abstract text available Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	T1G4020036-FS T1G4020036-FS	PDF
Untitled Abstract: No abstract text available Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	T1G4020036-FL T1G4020036-FL	PDF
Untitled Abstract: No abstract text available Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	T1G4012036-FS T1G4012036-FS	PDF
Untitled Abstract: No abstract text available Text: T1G4012036-FL 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	T1G4012036-FL T1G4012036-FL	PDF
ATC600S0R Abstract: No abstract text available Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G6003028-FS T1G6003028-FS ATC600S0R	PDF
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8	PDF
motorola MOSFET 935 Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make	Original	MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor	PDF
SKY65050-372LF Abstract: S1408 S1410 VT47 S1417 Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram	Original	SKY65050-372LF: SKY65050-372LF 200967E S1408 S1410 VT47 S1417	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
1812C105KAT2A Abstract: C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101 Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers	Original	T1G6000528-Q3 T1G6000528-Q3 1812C105KAT2A C1206C104KRAC7800 600L270 7737 transistor CAPACITOR SPRAGUE 0149 Transistor s-parameter 600L270JT200 RO3210 RF Transistor s-parameter at 4GHz J1101	PDF

ic 5ma transistor Abstract: RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR 1.5 GHZ 2SC4252 RF POWER TRANSISTOR NPN RF TRANSISTOR transistor NPN RF Transistor npn transistor RF NPN POWER TRANSISTOR 2 GHZ Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4252 DESCRIPTION •High Current-Gain Bandwidth Product fT = 2.1 GHz TYP. ·Low Output CapacitanceCOB = 1.1 pF TYP. APPLICATIONS ·Designed for TV tuner ,VHF oscillator applications.	Original	2SC4252 500MHz 30MHz ic 5ma transistor RF NPN POWER TRANSISTOR 3 GHZ RF TRANSISTOR 1.5 GHZ 2SC4252 RF POWER TRANSISTOR NPN RF TRANSISTOR transistor NPN RF Transistor npn transistor RF NPN POWER TRANSISTOR 2 GHZ	PDF
Untitled Abstract: No abstract text available Text: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	T1G4004532-FS T1G4004532-FS TQGaN25	PDF
resonator B69500-A9107 siemens Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses Text: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active	Original	BFP405 resonator B69500-A9107 siemens microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses	PDF
GaN hemt Abstract: Gan hemt transistor Text: MAGX-002735-040L00 GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle Production V1 26 March 12 Features •       GaN depletion mode HEMT microwave transistor Common source configuration	Original	MAGX-002735-040L00 300us MAGX-002735-040L00 GaN hemt Gan hemt transistor	PDF
BLS6G2731-120 Abstract: No abstract text available Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.	Original	BLS6G2731-120; BLS6G2731S-120 BLS6G2731-120 6G2731S-120	PDF
smd transistor 6g Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance	Original	BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component	PDF
hartley oscillator mc13146 Abstract: H5X2 MC12054 MC13145 MC13146 MC13146FTA MC33410 MMBV809L MMBV809LT1 VCO transistor Text: Order this document by MC13146/D MC13146 Low Power Integrated Transmitter for ISM Band Applications LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage	Original	MC13146/D MC13146 MC13146 MC13145) MC33410 MC33411A/B) hartley oscillator mc13146 H5X2 MC12054 MC13145 MC13146FTA MMBV809L MMBV809LT1 VCO transistor	PDF
BLS6G3135-20 Abstract: No abstract text available Text: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance	Original	BLS6G3135-20; BLS6G3135S-20 BLS6G3135-20 6G3135S-20	PDF
transistor d 1302 Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance	Original	BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component	PDF
transistor B 764 Abstract: 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 T1P3002028-SP powerband N4030 Text: TriQuint It TM PO W ER BAN D SEMICONDUCTOR T1P3002028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3002028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.	OCR Scan	T1P3002028-SP T1P3002028-SP 500MHz 30watts transistor B 764 952625 FCD50 74386 P1D8 pHEMT transistor 360 transistor di 960 powerband N4030	PDF

RF TRANSISTOR 10-12 GHZ Search Results

RF TRANSISTOR 10-12 GHZ Result Highlights (5)

RF TRANSISTOR 10-12 GHZ Datasheets Context Search

2SC5015

NEC 1357

1920A12

Untitled

Untitled

Untitled

Untitled

Untitled

ATC600S0R

Z9 TRANSISTOR SMD

motorola MOSFET 935

SKY65050-372LF

transistor equivalent table 557

1812C105KAT2A

ic 5ma transistor

Untitled

resonator B69500-A9107 siemens

GaN hemt

BLS6G2731-120

smd transistor 6g

hartley oscillator mc13146

BLS6G3135-20

transistor d 1302

transistor B 764