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    RF TRANSISTOR BFR94 Search Results

    RF TRANSISTOR BFR94 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF TRANSISTOR BFR94 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR94

    Abstract: No abstract text available
    Text: BFR949L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949L3 BFR94

    transistor zs 35

    Abstract: BFR949L3 transistor marking zs BFR94
    Text: BFR949L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949L3 Aug-09-2001 transistor zs 35 BFR949L3 transistor marking zs BFR94

    BFR94

    Abstract: No abstract text available
    Text: BFR949L3 NPN Silicon RF Transistor Preliminary data  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz 3 F = 1.0 dB at 1 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949L3 BFR94

    MARKING rks

    Abstract: BFR949F transistor bf 186
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR949F EHA07524 Jan-04-2002 MARKING rks BFR949F transistor bf 186

    BFR94

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996 BFR94

    BFR949T

    Abstract: SC75 BFR94
    Text: BFR949T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949T VPS05996 Aug-09-2001 BFR949T SC75 BFR94

    Untitled

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original     		PDF BFR949T

    Untitled

    Abstract: No abstract text available
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR949F

    Untitled

    Abstract: No abstract text available
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996

    BFR949T

    Abstract: MA457 MARKING C6 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking


    Original     		PDF BFR949T BFR949T MA457 MARKING C6 BFR94

    bfr949

    Abstract: BFR949F
    Text: BFR949F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA 1 • fT = 9 GHz, F = 1 dB at 1 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949F 50mponents bfr949 BFR949F

    ua 722 fc

    Abstract: BCR847BF MARKING rks BFR94
    Text: BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA  fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type


    Original     		PDF BFR949F ua 722 fc BCR847BF MARKING rks BFR94

    BFR949T

    Abstract: SC75 GMA marking
    Text: BFR949T NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BFR949T VPS05996 Oct-24-2001 BFR949T SC75 GMA marking

    Untitled

    Abstract: No abstract text available
    Text: BFR949L3 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR949L3

    SMD 6PIN IC MARKING CODE

    Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
    Text: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) SMD 6PIN IC MARKING CODE marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2

    Infineon Technologies transistor 4 ghz

    Abstract: BFR193L3 BFR949L3 BFR94
    Text: BFR949L3 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original     		PDF BFR949L3 Infineon Technologies transistor 4 ghz BFR193L3 BFR949L3 BFR94

    TRANSISTOR MARKING NK

    Abstract: BCR108T BFR949T SC75 SC79 SCD80 BFR94
    Text: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 • fT = 9 GHz, F = 1 dB at 1 GHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFR949T TRANSISTOR MARKING NK BCR108T BFR949T SC75 SC79 SCD80 BFR94

    BFR94

    Abstract: rf transistor bfr94 BFR-94
    Text: BFR94 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI BFR94 is Designed for Class A, B and C Amplifier Applications in the 225 to 400 MHz Military Band. A 45° C E B E B FEATURES: • PG = 10 dB min. at 3 W/ 400 MHz • ηC = 50% min. at 3W/ 400 MHz


    Original     		PDF BFR94 BFR94 rf transistor bfr94 BFR-94

    BFR460L3

    Abstract: BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) BFR460L3 BFR949L3 BFS469L6 BFR94

    SMD 6PIN IC MARKING CODE p

    Abstract: SMD 6PIN IC MARKING CODE 1G SMD 6PIN IC MARKING CODE marking code CB SMD ic K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE IP SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE ce BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) Sep-01-2003 SMD 6PIN IC MARKING CODE p SMD 6PIN IC MARKING CODE 1G SMD 6PIN IC MARKING CODE marking code CB SMD ic K1 MARK 6PIN TRANSISTOR SMD MARKING CODE 2x SMD 6PIN IC MARKING CODE IP SMD transistor MARKING code 1g TRANSISTOR SMD MARKING CODE ce BFR94

    smd tr1

    Abstract: BFR460L3 BFR949L3 BFS469L6 BFR94
    Text: BFS469L6 NPN Silicon RF TWIN Transistor 4 Preliminary data • Low voltage/ low current applications 3 5 • Ideal for VCO modules and low noise amplifiers 2 6 • Low noise figure: TR1: 1.1dB at 1.8 GHz 1 TR2: 1.5 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package


    Original     		PDF BFS469L6 BFR460L3, BFR949L3) Sep-01-2003 smd tr1 BFR460L3 BFR949L3 BFS469L6 BFR94

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: BFR94AW NPN 5 GHz wideband transistor Rev. 1 — 29 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR94AW uses the same crystal as the SOT23 version, BFR94A.


    Original     		PDF BFR94AW OT323 BFR94AW BFR94A. AEC-Q101

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503