Untitled
Abstract: No abstract text available
Text: LMX2330L,LMX2331L,LMX2332L LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RFPersonal Communications LMX2330L 2.5 GHz/510 MHz, LMX2331L 2.0 GHz/510 MHz,LMX2332L 1.2 GHz/510 MHz Literature Number: SNAS111B OBSOLETE July 11, 2011
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LMX2330L
LMX2331L
LMX2332L
LMX2330L/LMX2331L/LMX2332L
GHz/510
LMX2332L
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XPOSYS
Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Text: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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BFP640ESD
OT343
OT343-PO
OT343-FP
BFP640ESD:
OT323-TP
726-BFP640ESDE6327
640ESD
E6327
XPOSYS
gummel poon model parameter HBT
X-GOLD
colossus
diodes transistor marking k2 dual
Trimble
Germanium Transistor
agilent ads
SENSONOR
2.4ghz lnb
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K745
Abstract: PCS1900 TQD714006 TQD764022 TQM7M4022 W9-081 PAA 725
Text: TQD764022 Preliminary Data Sheet DCS/PCS Power Amplifier Die Functional Block Diagram Vcon Vcon Vcc1 Vcc2 Features Vcc2 • • • • W90815 PAA Bias circuitry Input match ESD protection RFout DCS/PCS ESD protection RFin DCS/PCS High Efficiency 50 Ω input and output impedances
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TQD764022
W90815
TQD764022
TQM7M4022
K745
PCS1900
TQD714006
W9-081
PAA 725
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Untitled
Abstract: No abstract text available
Text: Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1318
SPA-1318
EDS-101429
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WiFi LDPC
Abstract: 802.11n transmitter atheros LDPC LDPC Codes wi-fi transmitter 2.4 atheros Transmit Beamforming ZF steering wi-fi transmitter 2x2 MIMO ldpc decoder
Text: Achieving Higher Throughput and Greater Range in 802.11n Networks by Sustaining Signals for Improved Performance and Reliability At h e r o s w h i t e P ap e r – P u b l ic at io n Dat e 1 2 / 2 0 0 9 A b stra c t This whitepaper introduces engineers and managers to the key technical issues associated with
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Untitled
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM9201 Fully integrated, low power 2.4 GHz Transceiver Description EM9201 is a low-voltage 2.4GHz transceiver IC with built-in link-layer logic suitable for proprietary wireless links in the 2.400 … 2.4835 GHz ISM band. EM9201 features a radio core with a low-IF architecture
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EM9201
EM9201
9201-DS
13-Sep-12
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abb fox 6
Abstract: ALG circuit breaker
Text: Relion Protection and control 650 series IEC 61850 Communication Protocol Manual Document ID: 1MRK 511 242-UEN Issued: February 2011 Revision: Product version: 1.1 Copyright 2011 ABB. All rights reserved Copyright This document and parts thereof must not be reproduced or copied without written
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242-UEN
SE-721
242-UEN
abb fox 6
ALG circuit breaker
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Untitled
Abstract: No abstract text available
Text: STLBC01 Bluetooth low energy controller Datasheet - production data Applications • Watches VFQFPN 24L • Fitness, wellness and sports • Consumer medical • Security/proximity Features • Remote control • Bluetooth specification v4.0 compliant master
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STLBC01
STM32L
DocID022984
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET Mini-Coax 4 CHANNEL BLOCK STRAIGHT MF2C117-40ML5-NM *A wide variety of transmissionline topologies and pcb-parameters like permittivity, substrate thickness, and board-stackup are applied by customers. These parameters have a strong impact on the high frequency performance of the mounted connector.
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MF2C117-40ML5-NM
D-84526
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET Mini-Coax 8 CHANNEL BLOCK STRAIGHT MF2C118-40ML5-NM *A wide variety of transmissionline topologies and pcb-parameters like permittivity, substrate thickness, and board-stackup are applied by customers. These parameters have a strong impact on the high frequency performance of the mounted connector.
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MF2C118-40ML5-NM
D-84526
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N3300
Abstract: TF060197WP10338AQ1 TDZ50170BJ10338AQ1 TF070265WP10338BK1
Text: TDZ 050170, TDFZ 060., TDFZ 070265 www.vishay.com Vishay Draloric RF Power Pot Capacitors for Coupling Purposes, Class 1 Ceramic Dielectric FEATURES • High voltage and capacitance ratings • High reliability APPLICATIONS Filter, bypass and coupling circuits were high voltages and
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N3300,
N3300
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
N3300
TF060197WP10338AQ1
TDZ50170BJ10338AQ1
TF070265WP10338BK1
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B0050B
Abstract: b0050
Text: TECHNICAL DATA SHEET Mini-Coax 8 CHANNEL BLOCK RIGHT ANGLE 23C21D-40ML5 *A wide variety of transmissionline topologies and pcb-parameters like permittivity, substrate thickness, and board-stackup are applied by customers. These parameters have a strong impact on the high frequency performance of the mounted connector.
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23C21D-40ML5
B0200T
D-84526
B0050B
b0050
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SSO24
Abstract: stabiliser circuit diagram S11B VHF-UHF Band oscillator BA282 BB515 BB620 S11A U2326B U2326B-AFSG3
Text: U2326B VHF/ UHF-Tuner-IC Description This tuner IC requires a power supply of 9 V and performs the function of two separate oscillators and mixers, SAWF-driver, LO output and two-state band switch. Together with the Easy Link PLL U6220B economical 9 V tuner with excellent RF-performance can be build.
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U2326B
U6220B
D-74025
Jul-96
SSO24
stabiliser circuit diagram
S11B
VHF-UHF Band oscillator
BA282
BB515
BB620
S11A
U2326B
U2326B-AFSG3
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UV emitting diode 200 nm
Abstract: recloser sgm switch SMS module datasheet fox 515 abb HB relay DIODE bfp 86 abb fox 6
Text: 3URWHFW,7 /LQH GLVWDQFH SURWHFWLRQ WHUPLQDO 5 / 1MRK 506 169-BEN Page 1 Revision: A Issued: October 2003 Data subject to change without notice HDWXUHV • Open terminal with extensive configuration possibilities and expandable hardware design to meet specific user requirements
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169-BEN
173-UEN
009-BEN
112-BEN
SE-721
UV emitting diode 200 nm
recloser
sgm switch
SMS module datasheet
fox 515 abb
HB relay
DIODE bfp 86
abb fox 6
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mcp60221
Abstract: IND-AIR-10-00189-500V-PTH UMSH-3112JNV-1G FAIRCHILD 1n5819 SMD diode Zener 5.1V UNITED RADIANT UMSH-3112JNV-1G yageo 1206 smd 1N5819 smd diode buzzer CC 1206 smd diode B3 SOT23
Text: AN1024 使用 PIC16F639 的 PKE 系统设计 作者： Youbok Lee, Ph.D. Microchip Technology Inc. 引言 免持式被动无钥门禁 （Passive Keyless Entry， PKE） 正迅速成为汽车远程无钥门禁应用的主流，并成为新型 汽车的普遍选择。使用该系统时，无需用手按发送器按
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AN1024
PIC16F639
PIC16F639
mcp60221
IND-AIR-10-00189-500V-PTH
UMSH-3112JNV-1G
FAIRCHILD 1n5819 SMD diode
Zener 5.1V
UNITED RADIANT UMSH-3112JNV-1G
yageo 1206 smd
1N5819 smd diode
buzzer CC 1206
smd diode B3 SOT23
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Untitled
Abstract: No abstract text available
Text: BFP840ESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BFP840ESD
OT343
OT343-PO
OT343-FP
BFP840ESD:
OT323-TP
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Untitled
Abstract: No abstract text available
Text: BFR840L3RHESD Robust low noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-07-11 RF & Protection Devices Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BFR840L3RHESD
BFR840L3RHESD:
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Untitled
Abstract: No abstract text available
Text: BFP420F Low Noise Silicon Bipolar RF Transistor Data Sheet Revision 1.0, 2012-01-30 RF & Protection Devices Edition 2012-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP420F
BFP420F:
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Untitled
Abstract: No abstract text available
Text: BFP720ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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BFP720ESD
OT343
OT343-PO
OT343-FP
BFP720ESD:
OT323-TP
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PDF
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128064
Abstract: tl 8903
Text: LM X 2330L,LM X 2331 L,L M X 2 33 2L LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RFPersonal Communications LMX2330L 2.5 GHz/510 MHz, LMX2331L 2.0 GHz/510 MHz,LMX2332L 1.2 GHz/510 MHz Texa s In s t r u m e n t s Literature Number: SNAS111B
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OCR Scan
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2330L
LMX2330L/LMX2331L/LMX2332L
LMX2330L
GHz/510
LMX2331L
LMX2332L
SNAS111B
LMX2330L/LMX2331L/
128064
tl 8903
|
PDF
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LG color tv Circuit Diagram schematics
Abstract: MD 1803 FX MN102L35G 27C202 eprom 711S SERVICE MANUAL Panasonic Panasonic color television schematic diagram ls010 lg led tv internal parts block diagram LG 631 TV LG
Text: P a n iB r i n g i n g a X S ‘l o m o T r o z v MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • ^ 3 2 6 5 2 0016705 273 ■ This Material Copyrighted By Its Respective Manufacturer e rie s t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the
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MN102L35G
001fl7fl5
LG color tv Circuit Diagram schematics
MD 1803 FX
27C202 eprom
711S
SERVICE MANUAL Panasonic
Panasonic color television schematic diagram
ls010
lg led tv internal parts block diagram
LG 631 TV LG
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MI C RO WA V E P O W E R GaAs FET M IC RO WA VE SEMICONDUCTOR T E C H N I C A L DATA S9G77A FEATURES : • HI GH ■ PARTIALLY MATCHED POWER P idB = 33.0 dBm at 3 .7 G H z ■ HI GH ■HERMETI CALLY GAI N SEALED PACKAGE G 1dB = 10.5 dB at 3 .7 G H z
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S9G77A
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PDF
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2T931A
Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Text: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K
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MOKP51KOB,
KTC631
TI2023
II2033
TT213
TI216
fI217
II302
XI306
n306A
2T931A
KT853
2T926A
KT838A
2T803A
2T809A
2T904A
2T808A
2T603
2T921A
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PDF
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TIM3536-60
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM 3536-60 FEATURES : •HIGH POWER ■ P1dB=48dBm ■ HIGH at 3 . 5 GH z to ■ at 3 . 5 GH z to HERMETICALLY ELECTRICAL CHARACTERISTICS PACKAGE > > CO o Il II Z Û Ul MIN. 47.0 TYP.
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TIM3536-60
48dBm
-TIM3536-60
IDS-12A
VDS-12V
TIM3536-60
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PDF
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