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    ML200D

    Abstract: ACPF-7003 ACPF-7003-BLK ACPF-7003-TR1 RG200D Sn42Bi58
    Text: Agilent ACPF-7003 High Rx and Image Rejection Tx Filter for US PCS Band Data Sheet Features • High rejection from a single filter with no switches required • True split band replacement General Description The ACPF-7003 is a high rejection full band transmit


    Original     		PDF ACPF-7003 ACPF-7003 ACPF-7003-TR1 5989-1791EN 5989-3923EN ML200D ACPF-7003-BLK ACPF-7003-TR1 RG200D Sn42Bi58

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC 1 REVISIONS DIST ALL RIGHTS RESERVED. P DESCRIPTION LTR DATE DWN APVD D D 1.57 OVERALL THICKNESS 38.1 6.6 PN: 1513156-1 REV F1 4 DIGIT DATE CODE C


    Original     		PDF RG200D TEC-138-702 31MAR2000

    Sn43Pb43Bi14

    Abstract: Sn95Sb5 GETEK Sn42Bi58 ACPF-7002 ML200D RG200D Sn95.8Ag3.5Cu0.7 Sn91
    Text: Agilent ACPF-7002 High Rejection Tx Filter for US PCS Band Data Sheet General Description Features • High rejection from a single filter With no switches required. • Passband: 1850-1910 MHz 33 dB min Attenuation, 1930-1990 MHz 2.5 dB Typical Insertion Loss


    Original     		PDF ACPF-7002 100pcs 3000pcs 5989-0380EN Sn43Pb43Bi14 Sn95Sb5 GETEK Sn42Bi58 ACPF-7002 ML200D RG200D Sn95.8Ag3.5Cu0.7 Sn91

    Transistor TT 2140

    Abstract: SF128 pseudomorphic HEMT A004R ATF-521P8 BCV62B MGA-53543 MO229 RG200D UMTS AND GSM AND PCS
    Text: ATF-521P8 High Linearity Enhancement Mode [1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Description Features Avago Technologies’ ATF‑521P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC[3] package.


    Original     		PDF ATF-521P8 ATF521P8 5988-9974EN AV02-0846EN Transistor TT 2140 SF128 pseudomorphic HEMT A004R ATF-521P8 BCV62B MGA-53543 MO229 RG200D UMTS AND GSM AND PCS

    transistor c815

    Abstract: ATF-511P8 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm
    Text: ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Avago’s ATF-511P8 is an ­ enhancement mode PHEMT ­designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well suited as a base


    Original     		PDF ATF-511P8 ATF-511P8 5988-9547EN AV02-0972EN transistor c815 LL1005-FH4N7S BCV62C LL1005-FH3N3S MGA-53543 RG200D Medium Power Bipolar Transistors rohm

    CHB capacitor Series

    Abstract: ATF-521P8 BCV62B BCV62C LL1005-FH2N2S MGA-53543 RG200D ATF-511P8
    Text: ATF-521P8 900 MHz High Linearity Amplifier Application Note 1374 Introduction Avago’s ATF-521P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 40 dBm and a 1 dB compression point of 24.4 dBm, the ATF-521P8 is


    Original     		PDF ATF-521P8 ATF-521P8 com/pdf/AN0002 ATF-511P8 CHB capacitor Series BCV62B BCV62C LL1005-FH2N2S MGA-53543 RG200D

    ATF-531P8

    Abstract: AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89
    Text: Agilent ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a


    Original     		PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN AN-1222 ATF531P83 BCV62B BCV62C RG200D fet curtice nonlinear model DEMO-ATF-5X1P8 High Dynamic Range FET sot-89

    ATF-511P8

    Abstract: R747 transistor c815 BCV62B BCV62C LL1005-FH3N3S LL1005-FH4N7S MGA-53543 RG200D
    Text: Agilent ATF-511P8 900 MHz High Linearity Amplifier Application Note 1373 Introduction Agilent’s ATF-511P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 41 dBm and a 1 dB compression point of 25 dBm, the ATF-511P8 is well


    Original     		PDF ATF-511P8 ATF-511P8 5988-9547EN R747 transistor c815 BCV62B BCV62C LL1005-FH3N3S LL1005-FH4N7S MGA-53543 RG200D

    diagram transistor tt 2140

    Abstract: Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439
    Text: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB Agilent Technologies’s ATF-521P8 is a single-voltage high linearity, low noise


    Original     		PDF ATF-521P8 5988-9974EN diagram transistor tt 2140 Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439

    linear amplifier P1dB 36dBm

    Abstract: 5.1 amplifier PCB layout 5.1 amplifier circuits diagram RG200D LL1608FS MGA-545P8
    Text: Using the MGA-545P8 High Linearity Amplifier for Applications between 50MHz and 1000MHz Application Note 5028 Introduction RF Grounding Avago Technologies’s MGA-545P8 is an economical, low current, medium power E-pHEMT MMIC that offers very useful performance for applications below 1000MHz such


    Original     		PDF MGA-545P8 50MHz 1000MHz MGA-545P8 1000MHz 250MHz 21dBm 135mA linear amplifier P1dB 36dBm 5.1 amplifier PCB layout 5.1 amplifier circuits diagram RG200D LL1608FS

    PIN diode ADS model

    Abstract: PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 HMPP-3865 MCH18 RG200D
    Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Avago Technologies HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing the maximum frequency


    Original     		PDF HMPP-3865 5988-8470EN HSMP-389V HSMP-3890 PIN diode ADS model PIN attenuator ADS model PIN diode SPICE model TOKO INDUCTORS TOKO INDUCTORS spice HMPP-3860 HMPP-3862 MCH18 RG200D

    Sn43Pb43Bi14

    Abstract: Sn95Sb5 ML200D GETEK Sn63pB37 temp profile ACPF-7002 RG200D Sn95.8Ag3.5Cu0.7
    Text: Agilent ACPF-7002 High Rejection Tx Filter for US PCS Band Data Sheet General Description Features • High rejection from a single filter With no switches required. • Passband: 1850-1910 MHz 33 dB min Attenuation, 1930-1990 MHz 2.5 dB Typical Insertion Loss


    Original     		PDF ACPF-7002 100pcs 3000pcs 5989-0380EN 5989-3924EN Sn43Pb43Bi14 Sn95Sb5 ML200D GETEK Sn63pB37 temp profile ACPF-7002 RG200D Sn95.8Ag3.5Cu0.7

    ML200D

    Abstract: 8AG3 GETEK ACPF-7003-BLK Sn43Pb43Bi14 ACPF-7003 ACPF-7003-TR1 RG200D Sn42Bi58 6755 MARKING
    Text: Agilent ACPF-7003 High Rx and Image Rejection Tx Filter for US PCS Band Data Sheet Features • High rejection from a single filter with no switches required • True split band replacement General Description The ACPF-7003 is a high rejection full band transmit


    Original     		PDF ACPF-7003 ACPF-7003 ACPF-7003-TR1 5989-1791EN ML200D 8AG3 GETEK ACPF-7003-BLK Sn43Pb43Bi14 ACPF-7003-TR1 RG200D Sn42Bi58 6755 MARKING

    ACPF-7002

    Abstract: ML200D RG200D
    Text: ACPF-7002 High Rejection Tx Filter for US PCS Band Data Sheet General Description Features The ACPF-7002 is a high rejection full band transmit filter designed for US PCS handsets. Its performance rivals splitband surface acoustic wave SAW transmit filters. Since a single filter provides the rejection, no


    Original     		PDF ACPF-7002 ACPF-7002 ACPF-7002-XXX 5989-0380EN 5989-3924EN ML200D RG200D

    RG200D

    Abstract: 2100 mhz rf power amplifier circuit diagram 5.1 amplifier PCB layout LL1608FS MGA-545P8 DC TO 18GHZ RF AMPLIFIER MMIC rf power amplifier circuit diagram with pcb layout 1800mhz rf frequency power amplifier circuit
    Text: Using the MGA-545P8 High Linearity Amplifier for Applications between 1.8GHz and 2.1GHz Application Note 5027 Introduction RF Grounding Avago Technologies’s MGA-545P8 is an economical, low current, medium power E-pHEMT MMIC that offers very useful performance for applications in the 1.8GHz, 1.9GHz


    Original     		PDF MGA-545P8 MGA-545P8 21dBm 135mA Unli10 1900MHz RG200D 2100 mhz rf power amplifier circuit diagram 5.1 amplifier PCB layout LL1608FS DC TO 18GHZ RF AMPLIFIER MMIC rf power amplifier circuit diagram with pcb layout 1800mhz rf frequency power amplifier circuit

    PIN diode ADS model

    Abstract: PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860
    Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Agilent HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing


    Original     		PDF HMPP-3865 5988-8470EN PIN diode ADS model PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860

    GETEK FR4

    Abstract: 113 marking code transistor ROHM mga 017 Philips sot 23-5 package marking transistor tt 2170 low noise high frequency HEMT from agilent rf amplifier broad band SF128 CAPACITOR chip mtbf atf GaAs FET HEMT Chips
    Text: ATF-521P8 High Linearity Enhancement Mode [1] ­Pseudomorphic HEMT in 2x2 mm2 LPCC[3] ­Package Data Sheet Avago Technologies’ ATF‑521P8 is a single-voltage high linearity, low noise E‑pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier LPCC[3] package.


    Original     		PDF ATF-521P8 ATF521P8 5988-9974EN GETEK FR4 113 marking code transistor ROHM mga 017 Philips sot 23-5 package marking transistor tt 2170 low noise high frequency HEMT from agilent rf amplifier broad band SF128 CAPACITOR chip mtbf atf GaAs FET HEMT Chips

    Transistor TT 2140

    Abstract: 1154 sf lna L439 transistor s11 s12 s21 s22 x band GaAs MESFET 261 sf128 diagram transistor tt 2140
    Text: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


    Original     		PDF ATF-521P8 5988-7787EN Transistor TT 2140 1154 sf lna L439 transistor s11 s12 s21 s22 x band GaAs MESFET 261 sf128 diagram transistor tt 2140

    Transistor TT 2140

    Abstract: diagram transistor tt 2140 SF128 ATF-521P8 BCV62B MGA-53543 MO229 RG200D ba 662 CHIP OBSOLETES TT 2170
    Text: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB • Low noise figure Pin 8 Pin 7 Drain Pin 6 Pin 5 Source (Thermal/RF Gnd) Description


    Original     		PDF ATF-521P8 5988-7787EN 5988-8403EN Transistor TT 2140 diagram transistor tt 2140 SF128 BCV62B MGA-53543 MO229 RG200D ba 662 CHIP OBSOLETES TT 2170

    C882 TRANSISTOR

    Abstract: ATF-531P8 Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers
    Text: ATF-531P8 900 MHz High Linearity Amplifier Application Note 1372 Introduction This application note describes the design and construction of a single stage 850 MHz to 900 MHz High Linearity Amplifier using Enhancement Mode pHEMT ATF-531P8. The amplifier has a typical gain of 22 dB


    Original     		PDF ATF-531P8 ATF-531P8. ATF-531P8 5988-9546EN C882 TRANSISTOR Curtice ATF531P8 ATF531P83 BCV62B BCV62C RG200D Avago Mounted Amplifiers

    555 7490 7447 7 segment LED display

    Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
    Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS


    OCR Scan     		PDF 54S/74S 54H/74H 54L/74L TIH101 555 7490 7447 7 segment LED display SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor

    RG200D

    Abstract: No abstract text available
    Text: TH I S DRAW ING I S U N P U B L I S H E D . COP Y RIGHT R E L E A S E D FO R P U B L I C A T I ON BY 20 TYCO ELECTRONICS ALL CORPORATION R IGHTS LOC REV I S I ON S D I ST RESERVED. DESCRIPTION R E V I S E D N O T E S AND T E LOGO GG 230CT2009 . 63 OVERALL


    OCR Scan     		PDF 230CT2009 RG200D 02NOV2005 3IMAR2000

    74L47

    Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
    Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


    OCR Scan     		PDF CC-401 10072-41-US 54S/74S 74L47 a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600

    SN76670

    Abstract: sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013
    Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS


    OCR Scan     		PDF CC-401 10072-41-US 54S/74S 54H/74H 54L/74L TIH101 SN76670 sn76131 SNF10 The Integrated Circuits Catalog for Design Engineers SN76005 inverter welder schematic inverter LS600 sn76630 SN76660 sn76013