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    Bel Power Solutions NRG3A35C4C4B4

    AC/DC CONVERTER 5V 350W
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    Honeywell Sensing and Control VPX1E4ABRG3A2B

    SWITCH SNAP ACT SPDTX4 15A 150V
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    DigiKey VPX1E4ABRG3A2B Box 2
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    TME VPX1E4ABRG3A2B 5
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    Master Electronics VPX1E4ABRG3A2B
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    Eaton Cutler-Hammer E05NBXRG3A

    It. Iec Fvnr B-Frame Solid State Overload, 6.3 - 20 Amps |Eaton Cutler Hammer E05NBXRG3A
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    Newark E05NBXRG3A Bulk 1
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    TE Connectivity MING3AFCR

    6638-103,MINFCR,G,3A,#16 IAW
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    ADDON X9RG3-AA

    ADDON DELL X9RG3 COMPATIBLE 45W 19.5V AT 2.31A LAPTOP POWER ADAPTER AND CABLE
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    NAC X9RG3-AA 93 1
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    RG3A Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RG3A General Semiconductor GLASS PASSIVATED FAST SWITCHING RECTIFIER Original PDF
    RG3A General Semiconductor Glass Passivated Fast Switching Rectifier Original PDF
    RG3A Vishay Fast Sinterglass Diode Original PDF
    RG3A General Instrument Short Form Data 1976 Short Form PDF
    RG3A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    RG3A Unknown Cross Reference Datasheet Scan PDF
    RG3A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    RG3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RG3G

    Abstract: RG3D DO204AP
    Text: RG3A THRU RG3M Glass Passivated Fast Switching Rectifier • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.1µA


    Original     		PDF MIL-S-19500 DO204AP 50mVp-p RG3G RG3D DO204AP

    RG3G

    Abstract: No abstract text available
    Text: RG3A / B / D / G / J / K / M VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway


    Original     		PDF 18-Jul-08 RG3G

    rg3g

    Abstract: No abstract text available
    Text: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package


    Original     		PDF MIL-S-19500 50mVp-p rg3g

    RG3M

    Abstract: RG3G
    Text: RG3A thru RG3M Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier Case Style G3 1.0 25.4 MIN *Features d e t n e t a P Reverse Voltage 50 to 1000V Forward Current 3.0A • High temperature metallurgically bonded construction


    Original     		PDF MIL-S-19500 50mVp-p 08-Feb-02 RG3M RG3G

    DIODE RG3j

    Abstract: RG3D RG3M DIODE RG3D
    Text: RG3A to RG3M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway


    Original     		PDF D-74025 28-Jan-03 DIODE RG3j RG3D RG3M DIODE RG3D

    RG3D

    Abstract: No abstract text available
    Text: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package


    Original     		PDF MIL-S-19500 50mVp-p RG3D

    g3 diode

    Abstract: DIODE RG3j RG3j RG3K RG3A
    Text: RG3A / B / D / G / J / K / M VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway


    Original     		PDF 08-Apr-05 g3 diode DIODE RG3j RG3j RG3K RG3A

    DIODE RG3j

    Abstract: DIODE RG3k RG3G
    Text: RG3A / B / D / G / J / K / M VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 3.0 ampere operation at Tamb = 55 °C with no thermal runaway


    Original     		PDF D-74025 11-Aug-04 DIODE RG3j DIODE RG3k RG3G

    BYW56V

    Abstract: BYW56 v BYW56 BY228 by228 v DO-204AP VISHAY MARKING vishay rectifiers marking G3 marking G4
    Text: VISHAY Vishay Semiconductors Marking on Rectifiers V BYW56 V BY228 17208 17207 SOD57 SOD64 Figure 1. V Figure 3. V RG1A 17217 DO-204AP G1 Figure 2. Document Number 84085 Rev. 7, 07-Jan-03 RG3A 17218 G3 Figure 4. www.vishay.com 1 VISHAY Vishay Semiconductors


    Original     		PDF BYW56 BY228 DO-204AP 07-Jan-03 BYW56V BYW56 v BYW56 BY228 by228 v VISHAY MARKING vishay rectifiers marking G3 marking G4

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


    Original     		PDF

    BYD74G

    Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
    Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


    Original     		PDF 5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    general instrument

    Abstract: No abstract text available
    Text: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package


    OCR Scan     		PDF MIL-S-19500 general instrument

    Untitled

    Abstract: No abstract text available
    Text: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3 .0 Amperes FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package


    OCR Scan     		PDF MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: RG3A THRU RG3M FAST SWITCHING GLASS PASSIVATED SILICON RECTIFIER Voltage - 50 to 1000 Volts Current - 3.0 Amperes FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package


    OCR Scan     		PDF MIL-S-19500

    RG3u

    Abstract: rg3g
    Text: RG3A THRU RG3M GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 50 to 1000 Volts Current - 3 . 0 Amperes FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package


    OCR Scan     		PDF MIL-S-19500 RG3u rg3g

    RG3G

    Abstract: No abstract text available
    Text: RG3A THRU RG3M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes FEATURES ♦ High temperature metalfurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package


    OCR Scan     		PDF MIL-S-19500 RG3G

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    byv260

    Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
    Text: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75


    OCR Scan     		PDF 5KA43A. 5KE440CA. 1N3611GPthru 1N3614GP. 1N3957GP 1N4001 1N4007 1N4001GP 1N4007GP. 1N4245 byv260 W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514

    5SBA20

    Abstract: ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249
    Text: ALPHANUMERICAL LIST OF ALL GENERAL SEMICONDUCTOR TYPES Note: Listed below are General Sem iconductor's part num bers, along with the Data Book in w hich they appear. For Zener and T V S page references, see the Zener/TVS Device Index on page 5 in th is book.


    OCR Scan     		PDF 5KA43A 5KE440CA 1N746 1N759 1N957 1N979 ZTK33C Z4KE100 ZGL41 ZGL41-200A 5SBA20 ZENER b29 B2950 BRF20100C BZY97C11 BRF20100CT BC337 B2060CT BRF1060 General Semiconductor 1N4249

    g1758

    Abstract: BYV27-200 byw32-200 G30D GP25M
    Text: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53


    OCR Scan     		PDF 5KA43, 5KE440, 1N3611GP 1N3957GP 1N4001 1N4007, 1N4148, 1N4150 1N4151, 1N4245 g1758 BYV27-200 byw32-200 G30D GP25M