RJP30E Search Results

RJP30E Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJP30E3DPK-M0#T0		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT)
RJP30E2DPP-M0#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube
RJP30E3DPP-M0#T2		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-220FL, /Tube
RJP30E2DPK-M0#T0		Renesas Electronics Corporation	Insulated-Gate Bipolar Transistors (IGBT), TO-3PSG, /Tube

RJP30E Price and Stock

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Rochester Electronics LLC RJP30E3DPP-M0-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E3DPP-M0-T2	Bulk			98	1 - 10 - 100 $3.07 1000 $3.07 10000 $3.07	Buy Now
Rochester Electronics LLC RJP30E4DPE-00-J3 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E4DPE-00-J3	Bulk			107	1 - 10 - 100 - 1000 $2.81 10000 $2.81	Buy Now
Rochester Electronics LLC RJP30E2DPP-M0-T2 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E2DPP-M0-T2	Bulk			38	1 - 10 - 100 $8.08 1000 $8.08 10000 $8.08	Buy Now
Rochester Electronics LLC RJP30E3DPK-M2-T0 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E3DPK-M2-T0	Bulk			28	1 - 10 - 100 $11.1 1000 $11.1 10000 $11.1	Buy Now
Rochester Electronics LLC RJP30E2DPK-M0-T0 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJP30E2DPK-M0-T0	Bulk			38	1 - 10 - 100 $8.08 1000 $8.08 10000 $8.08	Buy Now

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RJP30E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TO-220FL Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) TO-220FL
rjp30 Abstract: RJP30E Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPP-M0 R07DS0353EJ0200 O-220FL PRSS0003AF-A) O-220FL) rjp30 RJP30E
RJP30E3 Abstract: rjp30e3dpk RJP30e Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 rjp30e3dpk RJP30e
RJP30E3 Abstract: RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30 Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPP-M0 O-220FL R07DS0353EJ0200 PRSS0003AF-A) O-220FL) RJP30E3 RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30
rjp30e2 Abstract: rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30 R07DS0347EJ0200 Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPP-M0 O-220FL R07DS0347EJ0200 PRSS0003AF-A) O-220FL) rjp30e2 rjp30e2dpp RJP30E2DPp-M0 RJP30e PRSS0003AF-A r07ds0347ej Rjp30
rjp30e2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A
RJP30E2 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A RJP30E2
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)
RJP30E3 Abstract: No abstract text available Text: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPP-M0 R07DS0347EJ0200 O-220FL PRSS0003AF-A) O-220FL)
rjp30e2 Abstract: rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2 Text: Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ	Original	PDF	RJP30E2DPK-M0 R07DS0348EJ0100 PRSS0004ZH-A rjp30e2 rjp30e2dpk RJP30e RJP30E2DPK-M0 Rjp30 PRSS0004ZH-A APR12 RJP30E2DPK-M0-T0 rjp-30e2
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram