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    RJP30H2DPK Search Results

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    RJP30H2DPK Price and Stock

    Rochester Electronics LLC RJP30H2DPK-M2-T0

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    DigiKey RJP30H2DPK-M2-T0 Bulk 55
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    Renesas Electronics Corporation RJP30H2DPK-M2#T0

    RJP30H2DPK-M2#T0
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    Verical RJP30H2DPK-M2#T0 18,684 58
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    Rochester Electronics RJP30H2DPK-M2#T0 18,684 1
    • 1 $5.33
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    • 100 $5.01
    • 1000 $4.53
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    RJP30H2DPK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A PDF

    RJP30H2

    Abstract: rjp30h RJP30H2D RJP30H2dpk R07DS0467EJ0200 Rjp30
    Text: Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features •    Trench gate and thin wafer technology G6H-II series Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ


    Original     		RJP30H2DPK-M0 R07DS0467EJ0200 PRSS0004ZH-A RJP30H2 rjp30h RJP30H2D RJP30H2dpk Rjp30 PDF