Rogers RO4350B
Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Text: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
Rogers RO4350B
RO4350B ROGERS
GRM155R71E103KA01
25C2625
GRM1555C1H181JZ01
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Untitled
Abstract: No abstract text available
Text: Document Number: MML09212H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
400--scale
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RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the
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6010LM,
RO3003
RO3035
RO3203
RO3006
RO3206
RO3010
RO3210
RO4003C
RO4350B
RO4403
Rogers RO4003
rt/duroid 5880
RO4450F
rogers 5880
RO3006
rogers laminate materials
RO4450B
RO3210
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RO4350B
Abstract: Rogers RO4350B microstrip RC0402FR-07-910RL YAGEO CHIP Capacitors MARKING GRM1555C1H221JZ01 ERJ2GE0R00X marking us capacitor pf l1 GRM1555C1H560JZ01 RC0402JR yageo GRM1555C1H181JZ01
Text: Freescale Semiconductor Technical Data Document Number: MML09212H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML09212H
MML09212HT1
MML09212H
RO4350B
Rogers RO4350B microstrip
RC0402FR-07-910RL
YAGEO CHIP Capacitors MARKING
GRM1555C1H221JZ01
ERJ2GE0R00X
marking us capacitor pf l1
GRM1555C1H560JZ01
RC0402JR yageo
GRM1555C1H181JZ01
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GJM1555C1H180GB01
Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Text: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
GJM1555C1H180GB01
GRM1555C1H180JA01
C11 inductor
RC0402FR-07-1K2RL
RO4350B
Rogers RO4350B microstrip
phemt .s2p
25c2625
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MG271H
Abstract: marking s22 GRM1555C1H1R0BA01 mmic C5 sot 86 GRM1555C1H1R2BA01 GRM1555C1H1R8BA01
Text: Freescale Semiconductor Technical Data Document Number: MMG20271H9 Rev. 0, 12/2011 Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
OT--89
MMG20271H9T1
MMG20271H9
MG271H
marking s22
GRM1555C1H1R0BA01
mmic C5 sot 86
GRM1555C1H1R2BA01
GRM1555C1H1R8BA01
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG20271H9 Rev. 0, 12/2011 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MMG20271H9T1 High Linearity Amplifier The MMG20271H9 is a high dynamic range, single-stage, low noise amplifier MMIC, housed in a SOT-89 standard plastic package. With high OIP3 and low
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MMG20271H9
MMG20271H9T1
MMG20271H9
OT--89
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MML20242H
Abstract: RO4350B Rogers RO4350B microstrip
Text: Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 0, 10/2012 Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
RO4350B
Rogers RO4350B microstrip
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Untitled
Abstract: No abstract text available
Text: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed
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MML20242H
MML20242HT1
MML20242H
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Rogers RO4350B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 1, 8/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage
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MMZ25333B
MMZ25333B
MMZ25333BT1
8/2014Semiconductor,
Rogers RO4350B
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MTL ICC 317
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMZ25333B Rev. 0, 6/2014 2 W High Gain Power Amplifier for Cellular Infrastructure InGaP GaAs HBT The MMZ25333B is a versatile 3-stage power amplifier targeted at driver and pre-driver applications for macro and micro base stations and final-stage
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MMZ25333B
MMZ25333B
MMZ25333BT1
6/2014Semiconductor,
MTL ICC 317
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RO4350B
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
500ating
8/2013Semiconductor,
RO4350B
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
DataMRFG35010AN
ATC100A101JP150
GT5040
MRFG35010ANT1
ATC100B101JP500XT
080514R7BBS
ATC100A100JP150X
ATC100A101JP150XT
Transistor Z14
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MGA-61563
Abstract: Rogers 4350B RO4350B microstripline Rogers RO4350B microstrip 4350B
Text: MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies’ EpHEMT process and is targeted for commercial wireless application from 100 MHz to 6 GHz. The MGA-61563
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MGA-61563
MGA-61563
powe20
5988-9183EN
AV02-0146EN
Rogers 4350B
RO4350B
microstripline
Rogers RO4350B microstrip
4350B
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Untitled
Abstract: No abstract text available
Text: QTVAXX0NXXXSMTF DATA SHEET REV 07/28/2010 FEATURES APPLICATIONS • 36 – 50 GHz • Surface Mount for Pick and Place Assembly • 1206 Small Footprint • RoHS Compliant Versions • Available on Tape & Reel • Same Footprint, Fixed Versions Available • Point to Point Radios
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RO4350B
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MGA-61563
Abstract: RO4350B 4350B Rogers RO4350B microstrip
Text: Agilent MGA-61563 High Performance GaAs MMIC Amplifier Application Note 5012 Application Information The MGA-61563 is a high performance GaAs MMIC amplifier fabricated with Agilent’s E-pHEMT process and is targeted for commercial wireless application from 100
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MGA-61563
MGA-61563
MGA61563
5988-9183EN
RO4350B
4350B
Rogers RO4350B microstrip
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MGA-62563
Abstract: microstripline FR4 RO4350B 4350B 62563 62563 amplifier MGA-6x563 Rogers 4350B LL1608-FS47NJ LL1608-FS4N7S
Text: MGA-62563 High Performance GaAs MMIC Amplifier Application Note 5011 Application Information The MGA-62563 is a high performance GaAs MMIC amplifier fabricated with Avago Technologies E-pHEMT process and is targeted for commercial wireless application from 100 MHz to 3 GHz. The MGA-62563
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MGA-62563
MGA-62563
pow-20
MGA-62563.
5988-9187EN
AV01-0307EN
microstripline FR4
RO4350B
4350B
62563
62563 amplifier
MGA-6x563
Rogers 4350B
LL1608-FS47NJ
LL1608-FS4N7S
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Rogers RO4350B microstrip
Abstract: No abstract text available
Text: GX03 Ultra Broadband Capacitor ADVANTAGES APPLICATIONS • Ultra Broadband performance • Ultra Low Insertion Loss • Semi Conductor Data Communications Customers • X7R Characteristics • Receiver Optical Sub-Assemblies • Excellent Return Loss • Transimpedance Amplifier
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16KHz
40GHz
50VDC
S-GX030M1013-N
Rogers RO4350B microstrip
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SMS7621-060
Abstract: rat-race mixer Rogers 4350B PIN diode SPICE model skyworks 4350B paras
Text: DATA SHEET SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Low barrier height • Suitable for use above 26 GHz • Low parasitic impedance: CP < 0.05 pF, LS < 0.2 nH
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SMS7621-060:
J-STD-020
SMS7621-060
201294D
rat-race mixer
Rogers 4350B
PIN diode SPICE model skyworks
4350B
paras
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage
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MW7IC2750N
MW7IC2750N
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
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PIN diode SPICE model skyworks
Abstract: rat-race mixer CLASS diode rf DETECTOR
Text: DATA SHEET SMS7621-060: Surface Mount, 0201 Low-Barrier Silicon Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Low barrier height • Suitable for use above 26 GHz • Low parasitic impedance: CP < 0.05 pF, LS < 0.2 nH
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SMS7621-060:
J-STD-020
SMS7621-060
201294E
PIN diode SPICE model skyworks
rat-race mixer
CLASS diode rf DETECTOR
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MRFE6VP8600H
Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C CRCW120610R0JNEA mrfe6vp8600hs C19C40 ATC200B ATC20
Text: Document Number: MRFE6VP8600H Rev. 0, 9/2011 Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices
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MRFE6VP8600H
MRFE6VP8600HR6
MRFE6VP8600HR5
MRFE6VP8600HSR6
MRFE6VP8600HSR5
MRFE6VP
UT-141C-25
C3225X7R2A225KT
UT-141C
CRCW120610R0JNEA
mrfe6vp8600hs
C19C40
ATC200B
ATC20
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IRL 1530
Abstract: MW7IC2750NBR1 AN1977 AN1987 JESD22-A114 MW7IC2750GNR1 MW7IC2750NR1
Text: Document Number: MW7IC2750N Rev. 2, 2/2010 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage
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MW7IC2750N
MW7IC2750N
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
IRL 1530
MW7IC2750NBR1
AN1977
AN1987
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 3, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 - 2700 MHz. This multi - stage
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MW7IC2750N
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
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