RQA0004LXAQS Search Results

RQA0004LXAQS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RQA0004LXAQS		Renesas Technology	Silicon N-Channel MOS FET		Original	PDF

RQA0004LXAQS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0200 Previous: REJ03G1567-0100 Rev.2.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)  Compact package capable of surface mounting	Original	PDF	RQA0004LXAQS R07DS0496EJ0200 REJ03G1567-0100) PLZZ0004CA-A
RQA0004LXAQS Abstract: No abstract text available Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz  Compact package capable of surface mounting	Original	PDF	RQA0004LXAQS R07DS0496EJ0400 PLZZ0004CA-A RQA0004LXAQS
RQA0004LXTL-E Abstract: 155-8-1 905-170 RQA0004LXAQS Text: RQA0004LXAQS Silicon N-Channel MOS FET REJ03G1567-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +29 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A	Original	PDF	RQA0004LXAQS REJ03G1567-0100 PLZZ0004CA-A RQA0004LXTL-E 155-8-1 905-170 RQA0004LXAQS
RQA0004LXAQS Abstract: RQA0004LXTL-E ka 494 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF