FMS2020-001
Abstract: MIL-HDBK-263 GaN Bias 25 watt Rogers
Text: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process
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FMS2020-001
FMS2020-001
10-Watt,
35dBm
FMS2020-001SR
FMS2020-001SQ
FMS2020-001SB
MIL-HDBK-263
GaN Bias 25 watt
Rogers
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Untitled
Abstract: No abstract text available
Text: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process
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FMS2020-001
FMS2020-001
10-Watt,
FMS2020-001SR
FMS2020-001SQ
FMS2020-001SB
FMS2020-001-EB
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rf mems switch using Power Handling
Abstract: No abstract text available
Text: FMS2016-001 FMS2016-001 High Power GaAs SP4T Switch HIGH POWER GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power
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FMS2016-001
FMS2016-001
FMS2016-001SR
FMS2016-001SQ
FMS2016-001-EB
DS110913
rf mems switch using Power Handling
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Untitled
Abstract: No abstract text available
Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET DE SiGe BiCMOS Si BiCMOS Si CMOS
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FMS2016-001
FMS2016-001
FMS2016-001SR
FMS2016-001SQ
FMS2016-001SB
FMS2016-001-EB
DS100125
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Untitled
Abstract: No abstract text available
Text: FMS2014-001 Data Sheet 4.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at
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FMS2014-001
FMS2014-001
MIL-STD-1686
MIL-HDBK-263.
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tba300
Abstract: No abstract text available
Text: Preliminary Draft Data Sheet 1.1 FMS2031-001 10Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz
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FMS2031-001
10Watt
42dBm
35dBm
FMS2031-001
MIL-STD-1686
MILHDBK-263.
FMS2031-001-TR
FMS2031-001-TB
FMS2031-001-EB
tba300
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FMS2016-001
Abstract: FMS2016-001-TB FMS2016-001-TR FMS2016QFN MIL-HDBK-263 sp4t switch die
Text: FMS2016-001 Datasheet v2.4 High Power Reflective GaAs SP4T Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: 3x3x0.9mm Packaged pHEMT Switch High isolation: >30dB at 1.8GHz Low Insertion loss: 0.65dB at 1.8GHz Excellent low control voltage performance
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FMS2016-001
2002/95/EC)
FMS2016-001
22-A114.
MIL-STD-1686
MIL-HDBK-263.
FMS2016-001-TR
FMS2016-001-TB
FMS2016-001-EB
FMS2016-001-TB
FMS2016-001-TR
FMS2016QFN
MIL-HDBK-263
sp4t switch die
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CW-37
Abstract: TX2 RX2 tx2/rx2 MIL-HDBK-263 FMS2032
Text: FMS2032 Preliminary Datasheet v2.1 SP6T GaAs Multi-Band GSM/EDGE Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >40dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz
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FMS2032
FMS2032
FMS2032-000-FF
FMS2032-000-WP
FMS2032-000-EB
CW-37
TX2 RX2
tx2/rx2
MIL-HDBK-263
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nitrogen coupling
Abstract: FMS2034 MIL-HDBK-263
Text: FMS2034 Preliminary Datasheet v2.1 SP7T Ultra-linear GaAs WEDGE Antenna Switch FEATURES: PRODUCT DESCRIPTION: • World-class IMD performance: -122 dBm at 2.14GHz • 2 Tx, 4 Rx ports, 1 TRx WCDMA , • Low Tx insertion loss: 0.6 dB at 900 MHz, 0.8 dB at 1.8 GHz
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FMS2034
14GHz
FMS2034
FMS2034-000-WP
FMS2034-000-EB
nitrogen coupling
MIL-HDBK-263
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Filtronic
Abstract: FMS2003QFN MIL-HDBK-263
Text: FMS2003QFN Preliminary Data Sheet 2.2 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Low cost QFN 12 lead 3*3 package Excellent low control voltage performance Excellent harmonic performance under
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FMS2003QFN
FMS2003QFN
22-A114
MIL-STD-1686
MIL-HDBK-263.
Filtronic
MIL-HDBK-263
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ESD 141
Abstract: FMS2022 B1142 capacitor 100pF 0603
Text: Preliminary Data Sheet FMS2022 2.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 ¨ ¨ ¨ ¨ ¨ Available as known good die Broadband performance Low Insertion loss <1.4 dB at 4 GHz typical High isolation >28 dB at 4 GHz typical
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FMS2022
FMS2022
22-A114-B.
MIL-STD-1686
MILHDBK-263.
ESD 141
B1142
capacitor 100pF 0603
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FMS2016-005-TR
Abstract: FMS2016-005-TB compound semiconductors FMS2016-005 FMS2016QFN MIL-HDBK-263
Text: FMS2016-005 Datasheet v3.0 High Power Reflective GaAs SP4T Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications High isolation: >30dB at 1.8GHz Excellent low control voltage performance
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FMS2016-005
2002/95/EC)
FMS2016-005
22-A114.
MIL-STD1686
MIL-HDBK-263.
FMS2016-005-TR
FMS2016-005-TB
FMS2016-005-EB
FMS2016-005-TR
FMS2016-005-TB
compound semiconductors
FMS2016QFN
MIL-HDBK-263
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FMS2014-001
Abstract: FMS2014-001-TB FMS2014-001-TR FMS2014QFN
Text: FMS2014-001 Data Sheet 3.0 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at
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FMS2014-001
FMS2014-001
FMS2014-001-TR
FMS2014-001-TB
FMS2014-001-EB
FMS2014-001-TB
FMS2014-001-TR
FMS2014QFN
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RT4350
Abstract: FMS2016-005 MIL-HDBK-263
Text: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-005 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power
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FMS2016-005
FMS2016-005
FMS2016-005SR
FMS2016-005SQ
FMS2016-005-EB
DS100730
RT4350
MIL-HDBK-263
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RT4350
Abstract: FMS2017-001 FMS2017-001-EB FMS2017QFN MIL-HDBK-263 RF3310 5766 RF112
Text: FMS2017QFN Preliminary Data Sheet 2.1 2.4GHz DPDT GaAs Single-Band WLAN Switch Features: Functional Schematic V4 ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Suitable for Single-band WLAN 802.11b/g Applications ♦ Excellent low control voltage performance ♦ Very low Insertion loss typ. 0.6dB at 2.5GHz
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FMS2017QFN
11b/g
FMS2017QFN
MIL-STD-1686
MIL-HDBK-263.
RT4350
FMS2017-001
FMS2017-001-EB
MIL-HDBK-263
RF3310
5766
RF112
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FMS2007
Abstract: FMS2007-001 FMS2007-001-EB FMS2007QFN MIL-HDBK-263 capacitor 100pF 0603
Text: FMS2007QFN Preliminary Data Sheet 2.2 DC-6GHz DPDT Diversity Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Very High Tx-Rx isolation Suitable for WLAN 802.11a and 802.11b/g Applications Filtronic Advanced GaAs pHEMT
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FMS2007QFN
11b/g
FMS2007QFN
MIL-STD-1686
MIL-HDBK-263.
FMS2007
FMS2007-001
FMS2007-001-EB
MIL-HDBK-263
capacitor 100pF 0603
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FMS2020-001
Abstract: MIL-HDBK-263 35DBM
Text: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features GaAs HBT V2 V1 GaAs MESFET SiGe BiCMOS RF1 Si BiCMOS DE InGaP HBT RF2 SiGe HBT GaAs pHEMT
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FMS2020-001
35dBm
FMS2020-001SR
FMS2020-001SQ
FMS2020-001SB
FMS2020-001-EB
DS100122
FMS2020-001
MIL-HDBK-263
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7474 truth table
Abstract: CW-37 7474 applications MIL-HDBK-263
Text: FMS2028 Datasheet v2.2 SP6T GaAs Multi-Band GSM Antenna Switch FEATURES: • • • • • • FUNCTIONAL SCHEMATIC: Available in die form Very low Tx Insertion loss High Tx-Rx isolation >45dB typ. at 1.8GHz High Tx-Tx isolation >30dB typ. at 1.8GHz Excellent low control voltage performance
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FMS2028
FMS2028
FMS2028-000-FF
FMS2028-000-WP
FMS2028-000-EB
7474 truth table
CW-37
7474 applications
MIL-HDBK-263
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diode gp 421
Abstract: FMS2020 FMS2020-000-GP
Text: Preliminary Data Sheet 2.1 FMS2020 GaAs Multi-Purpose Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic ANT Available in die form Suitable for L, S, and C-band digital cellular, cordless telephony and WLAN applications High isolation, 25dB typ at 2.5GHz
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FMS2020
38dBm
FMS2020
22-A114-B.
MIL-STD-1686
MILHDBK-263.
diode gp 421
FMS2020-000-GP
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Untitled
Abstract: No abstract text available
Text: Production 2.2 FMS2031-001 10 Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ANT 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz Low insertion loss, 0.5dB typ at 2.5GHz
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FMS2031-001
42dBm
35dBm
FMS2031-001
MIL-STD-1686
MILHDBK-263.
FMS2031-001-TR
FMS2031-001-TB
FMS2031-001-EB
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Untitled
Abstract: No abstract text available
Text: Preliminary Draft Data Sheet 1.1 FMS2031-001 10Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz
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FMS2031-001
10Watt
42dBm
35dBm
FMS2031-001
MIL-STD-1686
MILHDBK-263.
FMS2031-001-TR
FMS2031-001-TB
FMS2031-001-EB
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7474 truth table
Abstract: 65X65 MIL-HDBK-263 MICRO TX1 capacitor 1.8ghz 100pF 0402
Text: FMS2028 FMS2028 SP6T GAAS MULTI-BAND GSM ANTENNA SWITCH Package Style: Bare Die Product Description Features The FMS2028 is a low loss, high isolation, broadband single-pole six-throw Gallium Arsenide antenna switch. The die is fabricated using the FL05 0.5 m switch process from RFMD that offers leading edge performance optimized for switch applications.
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FMS2028
FMS2028
FMS2028-000
DS090519
FMS2028-000SQ
FMS2028-000S3
7474 truth table
65X65
MIL-HDBK-263
MICRO TX1
capacitor 1.8ghz 100pF 0402
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FMS2031-001
Abstract: MIL-HDBK-263
Text: FMS2031-001 FMS2031-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2031-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process
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FMS2031-001
FMS2031-001
10-Watt,
35dBm
FMS2031-001SR
FMS2031-001SB
FMS2031-001SQ
MIL-HDBK-263
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FMS2014-001
Abstract: FMS2014-001-EB FMS2014QFN MIL-HDBK-263
Text: FMS2014QFN Preliminary Data Sheet 2.1 High Power GaAs SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ Functional Schematic 3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels
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FMS2014QFN
FMS2014QFN
MIL-STD-1686
MIL-HDBK-263.
FMS2014-001
FMS2014-001-EB
MIL-HDBK-263
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