BLS2933-100
Abstract: T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057
Text: BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor at a supply voltage of 32 V for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.
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BLS2933-100
BLS2933-100
T491D475K050AS
Duroid 6006
NV SMD TRANSISTOR
13N-50-057
23N-50-057
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AP13N50W
Abstract: No abstract text available
Text: AP13N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 500V RDS ON 0.52Ω ID G 14A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP13N50W
13N50W
AP13N50W
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP13N50I-HF-3 N-channel Enhancement-mode Power MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 500V R DS ON 0.52Ω ID 14A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP13N50I-HF-3
AP13N50I-HF-3
O-220CFM
AP13N50
13N50I
O-220CFM
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13N50 equivalent
Abstract: 13N50 IXFH13N50
Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS
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13N50
ISOPLUS220TM
728B1
123B1
728B1
065B1
13N50 equivalent
13N50
IXFH13N50
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Untitled
Abstract: No abstract text available
Text: Power MOSFET IXTC 13N50 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS
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13N50
ISOPLUS220TM
728B1
123B1
728B1
065B1
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IXTH12N50A
Abstract: 13N50 1M500
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ISOPLUS 220TM Symbol Test Conditions Maximum Ratings
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13N50
ISOPLUS220TM
220TM
IXTH12N50A
13N50
1M500
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13N50
Abstract: IXTH12N50A
Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS
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13N50
ISOPLUS220TM
220TM
IXTH12N50A
728B1
13N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient
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13N50
Figure10.
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13N50
Abstract: 125OC FIGURE10
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient
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13N50
Figure10.
125OC
FIGURE10
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions V A W ns Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous
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13N50
O-220
Figure10.
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13N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can
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13N50
O-220
13N50
O-220F
20pFat
QW-R502-362
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13N50
Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can
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13N50
13N50
O-220
O-220F
QW-R502-362
13N50 equivalent
13n50g
13N50G-TF1-T
362 MOSFET
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13n50g
Abstract: 13N50
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
O-220
13N50
O-220F
QW-R502-362
13n50g
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50K-MT
13N50K-MT
O-220F2
QW-R502-B09
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13N50
Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
13N50
QW-R502-362
utc13n50
13n50g
13N50 equivalent
mosfet driver 400v
halogen ballast
13N50G-TA3-T
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12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t
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ISOPLUS220TM
US247TM
247TM
ISOPLUS22rM
ISOPLUS227TM
IXFE180N10
IXFE73N30Q
IXFE48N50Q
IXFE48N50QD2
12N60c equivalent
13N50 equivalent
equivalent of IGBT 12N60C
motor IG 2200 19
ixlf 19n250a
24N60CD1
19N250
32N50
004II
27N80Q
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12N60FI
Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90
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2SK1021
2SK1023
2SK1081
2SK1082
2SK1117
2SK1118
2SK1119
2SK1120
2SK1154
2SK1156
12N60FI
K791
a4n50e
2N60E
k2n50
2SK1118 cross reference
p3n90
p3n60
P6N60
TP3055EL
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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52N30
Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70
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76N06-11
76N07-11
76N07-12
67N10
75N10
50N20
58N20
74N20
80N20
35N30
52N30
20n80
ixfh 60N60
IXFX 44N80
15n10
7n80
E51G
44N80
60n60
46N50
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MTM13N50E
Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”
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BUZ10
BUZ11
BUZ11A
BUZ11S2
BUZ15
BUZ171
BUZ20
BUZ21
BUZ23
BUZ31
MTM13N50E
P40N10
24N40
p50n05
8n50e
Power MOSFET Cross Reference Guide
motorola 20n50e
TP50N05E
IRF510 mosfet irf640
33N10E
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Untitled
Abstract: No abstract text available
Text: nixYS IXFH 13N50 IXFM 13N50 V DSS = 500 V HiPerFET Power MOSFET I = 13 A N-Channel E nhancem ent Mode High dv/dt, L o w t , HDMOS™ Family FtDS on = 0.4 £1 t Test Conditions V DSS V DGR ^ = 25°C to 150°C 500 V ^ = 25°C to 150°C; RGS = 1 M£i 500
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13N50
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET IXFJ 13N50 V DSS Power MOSFETs ^D cont D DS(on) N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol t rr Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 Mß 500 V V GS Continuous ±20 V VGSM Transient
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13N50
25value
13N50
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13n50
Abstract: IXYS DS 145 MAX1352
Text: gixYS HiPerFET Power MOSFETs IXFJ 13N50 VDSS = 500 V iD cont = 13 A \ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Test Conditions VDSS Tj =25°Cto150°C 500 V VDGR T j = 25° C to 150° C; RQS= 1 M£2 500 V Vos v GSM Continuous ±20
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13N50
Cto150
T0-220
C1-111
IXYS DS 145
MAX1352
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ixfh13n50
Abstract: No abstract text available
Text: nixYS HiPerFET Power MOSFETs IXFH 13N50 VDSS I D cont P DS(on) = 500 V = 13 A = 0.4 Q <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family $8 Maximum Ratings Symbol Test Conditions V DSS ^ =25°Cto 150°C 500 V v DGR ^ = 25° C to 150° C; RGS= 1 M£2
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13N50
O-247
IXFH13N50
ixfh13n50
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