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    S2P 100 Price and Stock

    Amphenol Corporation MS3100F14S-2P

    Circular MIL Spec Connector 4P #16 PIN CONTACTS
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    Mouser Electronics MS3100F14S-2P 21
    • 1 $117.67
    • 10 $117.67
    • 100 $117.67
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    Amphenol Corporation MS3100E14S-2P

    Circular MIL Spec Connector 4P #16 PIN CONTACTS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MS3100E14S-2P 19
    • 1 $26.41
    • 10 $22.68
    • 100 $18.03
    • 1000 $17.67
    • 10000 $17.67
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    Amphenol Corporation MS3100A14S-2P

    Circular MIL Spec Connector 4P #16 PIN CONTACTS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MS3100A14S-2P 18
    • 1 $19.4
    • 10 $16.2
    • 100 $14.37
    • 1000 $14.37
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    Glenair Inc FRIT4100R14S-2PB0N0GF7

    Circular MIL Spec Connector POWER PRODUCTS - 5015 REVERSE BAYONET CONN
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    Mouser Electronics FRIT4100R14S-2PB0N0GF7 9
    • 1 $105.47
    • 10 $105.46
    • 100 $105.46
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    Amphenol Corporation MS3100E10S-2P

    Circular MIL Spec Connector ER 1C 1#16S PIN RECP WALL
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    Mouser Electronics MS3100E10S-2P 5
    • 1 $15.51
    • 10 $13.77
    • 100 $12.99
    • 1000 $12.76
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    Find more S2P 100 price and stock on Findchips.com

    S2P 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    how to calculate amplitude balance phase balance

    Abstract: balun 0805 anaren 04 3000 58982-6-P1 2425B50-50 balun 75/150 datasheet SD22 MR59 58982-6-P23
    Text: Measurement techniques for Baluns May 6, 2005 Measurements techniques for baluns A balun consists of an “unbalanced” port and two “balanced ports”. The balun is a passive and reversible device. Therefore the “unbalanced” port can be used as either an input or an output;


    Original     		PDF

    wk 2 94v-0

    Abstract: wk 3 94v-0 wk 2 94v0
    Text: SPECIFICATIONS Security Digital Card Connector WK Series Right Angle, SMT Push Push Type With Detect Switches 9 Pos. Mechanical Card Insertion Force: 40N max. Durability: 10000 Cycles Electrical Operating Voltage: 3.3V Operating Current: 100mA Contact Current Carrying Capacity : 500mA max.


    Original     		PDF 100mA 500mA 500Vrms 1000M wk 2 94v-0 wk 3 94v-0 wk 2 94v0

    transistor s2p

    Abstract: meander resistor s2p AN1037 meander-line NE662M04 TL11 AN-1036
    Text: California Eastern Laboratories APPLICATION NOTE AN1036 Effects of Parasitics in Circuit Simulations 1.0 Abstract 2.0 0.5 Including the proper parasitics in a nonlinear simulation can make the difference between an accurate prediction of circuit performance with minimal on-bench tuning and a design that


    Original     		PDF AN1036 NE662M04, transistor s2p meander resistor s2p AN1037 meander-line NE662M04 TL11 AN-1036

    small signal GaAs FET

    Abstract: gaAs FET s2p
    Text: Preliminary MwT- 11 High Power, High Linearity GaAs FET Dec 2005 Chip Dimensions: 775 x 343 microns Chip Thickness: 100 microns Features: +30 dBm typical Output Power at 12 GHz 9 dB typical Small Signal Gain at 12 GHz 40% typical PAE at 12 GHz 0.3 x 2400 Micron Refractory Metal/Gold Gate


    Original     		PDF MwT-11 small signal GaAs FET gaAs FET s2p

    f541m43b

    Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34
    Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed


    Original     		PDF ATF-541M4 ATF-541M4 5988-9004EN f541m43b 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34

    transistor s2p

    Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER lna 2.5 GHZ s parameter ads design Phycomp TL39 ATF-551M4 agilent pHEMT transistor TL381 ATF551M4 BCV62
    Text: High Intercept Point Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Applications using the Agilent ATF-551M4 Enhancement Mode PHEMT Application Note 1337 point of Vds = 2.7 V and Id of 15 mA, the 5.725 to 5.825 GHz ATF551M4 amplifier provides a


    Original     		PDF ATF-551M4 ATF551M4 ATF-551M4 5988-8609EN transistor s2p agilent pHEMT transistor LNA LOW NOISE AMPLIFIER lna 2.5 GHZ s parameter ads design Phycomp TL39 agilent pHEMT transistor TL381 BCV62

    TL24

    Abstract: Phycomp MGA-545P8 TL22 10D110 10D210 F293
    Text: Medium Power Amplifier for 5.8 GHz Applications using the Avago MGA‑545P8 GaAs MMIC Application Note 1339 Introduction Amplifier Demo Board Avago Technologies’s MGA‑545P8 is an economical low current medium power GaAs MMIC that offers excellent power output at 5.8 GHz. At a quiescent bias point of Vds


    Original     		PDF MGA545P8 MGA-545P8 MGA-545P8. 5988-8652EN AV02-2058EN TL24 Phycomp TL22 10D110 10D210 F293

    TL381

    Abstract: Phycomp 2n7040 ATF-551M4 f551m42o microstripline lna 2.5 GHZ s parameter ads design TL41 TL42 ATF551M4
    Text: High Intercept Point Low Noise Amplifiers for 5.125- 5.325 GHz and 5.725- 5.825 GHz Applications using the ATF-551M4 Enhancement Mode PHEMT Application Note 1337 Introduction Avago Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low


    Original     		PDF ATF-551M4 ATF-551M4 5988-8609EN TL381 Phycomp 2n7040 f551m42o microstripline lna 2.5 GHZ s parameter ads design TL41 TL42 ATF551M4

    TRANSISTOR W25

    Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor
    Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with


    Original     		PDF ATF-541M4 ATF-551M4, ATF-54143 SC-70 ATF-541M4) 5988-9004EN TRANSISTOR W25 TL39 Phycomp TL42 TL34 ATF-54143 ATF-551M4 BCV62 w21 transistor

    Phycomp

    Abstract: MGA-545P8 TL11 TL22 F293
    Text: Medium Power Amplifier for 5.8 GHz Applications using the Agilent MGA-545P8 GaAs MMIC Application Note 1339 Introduction Agilent Technologies’s MGA-545P8 is an economical low current medium power GaAs MMIC that offers excellent power output at 5.8 GHz. At a quiescent


    Original     		PDF MGA-545P8 MGA-545P8. MGA-545P8 5988-8652EN Phycomp TL11 TL22 F293

    MURATA GRM15 -V2

    Abstract: No abstract text available
    Text: AN11086 BGU7003 LNA application for GPS L2 band Rev. 2 — 9 October 2012 Application note Document information Info Content Keywords BGU7003, LNA, GPS L2 band. Abstract This application note provides circuit simulation, schematic, layout, BOM and typical EVB performance for GPS L2 LNA based on BGU7003.


    Original     		PDF AN11086 BGU7003 BGU7003, BGU7003. AN11086 MURATA GRM15 -V2

    Untitled

    Abstract: No abstract text available
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


    Original     		PDF CFY35 CFY35

    transistor s2p

    Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


    Original     		PDF CFY35 CFY35 transistor s2p design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10

    ltd 4601 g

    Abstract: 10.7 MHZ s2p r707 hitachi metals Hitachi DSA002700 la 761
    Text: Apr.'10 TBE775 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0707M01-T 1 (2) (3) (4) (5) (6) (7) (8) for UMTS BAND 12&17 Specification Tentative as of Apr '10 Frequency 698-716 MHz Insertion Loss_1* 0.55 dB max Insertion Loss_2 0.65 dB max


    Original     		PDF TBE775 HSMI-V2KB0707M01-T 47M01 16-Apr-10 HMAPD-10048 824-849MHz ltd 4601 g 10.7 MHZ s2p r707 hitachi metals Hitachi DSA002700 la 761

    LA 4303

    Abstract: HSMI-V2KB0836M01-T hitachi metals Hitachi DSA002700
    Text: Feb.'10 TBE664-1 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0836M01-T 1 (2) (3) (4) (5) (6) (7) (8) for for UMTS UMTS BAND BAND 55 Specification Dimensions Frequency 824-849 MHz Insertion Loss_1* 0.53 dB max Insertion Loss_2 0.63 dB max


    Original     		PDF TBE664-1 HSMI-V2KB0836M01-T 04-Mar-10 HMAPD-10027 824-849MHz LA 4303 HSMI-V2KB0836M01-T hitachi metals Hitachi DSA002700

    DECT transmitter siemens

    Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
    Text: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the


    Original     		PDF 24dBm 3-10mA DECT transmitter siemens pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent

    LA 2785

    Abstract: Hitachi DSA002700 R2535
    Text: Aug.'10 TBE856 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KA2535M01-T 1 Specification (2) (3) (4) Tentative Frequency as of Aug.’10 (5) (6) (7) (8) Dimensions (1) Series code (2) Size >> V2:2.0x2.0mm (3) Height >> K:1.0mm (4) Model code


    Original     		PDF TBE856 HSMI-V2KA2535M01-T HMAPD-10114 2500-2570MHz LA 2785 Hitachi DSA002700 R2535

    xxww

    Abstract: Chip Inductor CS Coilcraft
    Text: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"


    Original     		PDF 1008LS xxww Chip Inductor CS Coilcraft

    LA 4289

    Abstract: Hitachi DSA002700
    Text: Jan.'11 TBE786-1 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0847M01-T 2 (3) (4) (5) (6) (7) (8) for BAND 20 Tentative as of Jan ‘11 Isolation 8 dB min VSWR_ In 1.5 max VSWR_ Out 1.6 max Attenuation 2f 8 dB min Attenuation 3f


    Original     		PDF TBE786-1 HSMI-V2KB0847M01-T 11-Jan-11 832-862MHz LA 4289 Hitachi DSA002700

    Untitled

    Abstract: No abstract text available
    Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


    OCR Scan     		PDF CEN-A44 CEN-A45 CEN-A45A CEN-A44, EN-A45 MPS-A44, MPS-A45 100mA

    SP103C

    Abstract: AC125V3A SP210L AC125V AC1500V M12X1 OMD8010006 SPL210 SPP-7 AC250V6A
    Text: SP-SPL-SPP-S2P s M T 'M 5 í? 7 K '£ > 7 . 'f W m Miniature Pushbutton Switches • Jf¿=é<7>ü£B.Él/Part Numbering- • U L l ^ HDn H - 3 l ' T l i l 7 4 - < - v ? : C - # B a < t z £ SP 1 03 A • See page 174 for UL approved types.


    OCR Scan     		PDF M12X1 SP103AB S2PT220KD-3 S2PT220 AC250V AC1500V 100MQ 00DG1Ã SP103C AC125V3A SP210L AC125V M12X1 OMD8010006 SPL210 SPP-7 AC250V6A

    Untitled

    Abstract: No abstract text available
    Text: -r Recommended P.C.B Layout Component Side 070008FB01 5 Q 0 3 3 4 R 1. Selective plating ’S1,—0 5 u ” Min. gold in c o n ta c t a r e a / 100 u” Min. Tin in solder area. ’S2P—Gold flash in c o n ta c t a r e a / 100 u” Min. Tin in solder area.


    OCR Scan     		PDF 070008FB01 070008FB

    Untitled

    Abstract: No abstract text available
    Text: MODEL 8 2 1/4" Diameter Single Turn Cermet Trimming Potentiometer ELECTRICAL • Standard Resistance Range, Ohms 10 to 1Meg Standard Resistance Tolerance ±10% <100 Ohms = ±20% Input Voltage, Maximum 200 Vdc or rms not to exceed power rating Slider Current, Maximum


    OCR Scan     		PDF 100mA 133fc