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    S5141 Search Results

    S5141 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TPD1S514-1YZR Texas Instruments USB Charger Overvoltage Surge and ESD Protection 12-DSBGA -40 to 85 Visit Texas Instruments Buy
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    S5141 Price and Stock

    onsemi CS51414EDR8G

    IC REG BUCK ADJ 1.5A 8SOIC
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    DigiKey CS51414EDR8G Cut Tape 4,790 1
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    • 100 $1.4699
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    CS51414EDR8G Digi-Reel 4,790 1
    • 1 $3.37
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    CS51414EDR8G Reel 2,500 2,500
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    Mouser Electronics CS51414EDR8G 14,561
    • 1 $2.06
    • 10 $2
    • 100 $1.44
    • 1000 $1.09
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    Newark CS51414EDR8G Cut Tape 3,473 1
    • 1 $2.14
    • 10 $2.08
    • 100 $1.73
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    Rochester Electronics CS51414EDR8G 30,000 1
    • 1 $1.14
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    Avnet Asia CS51414EDR8G 17 Weeks 2,500
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    Avnet Silica CS51414EDR8G 18 Weeks 2,500
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    EBV Elektronik CS51414EDR8G 19 Weeks 2,500
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    Flip Electronics CS51414EDR8G 400
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    Win Source Electronics CS51414EDR8G 140,100
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    Texas Instruments TPD1S514-1YZR

    IC USB CHARGER OVP 12DSBGA
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    DigiKey TPD1S514-1YZR Reel 3,000 3,000
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    Mouser Electronics TPD1S514-1YZR 6,243
    • 1 $0.98
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    • 100 $0.527
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    TME TPD1S514-1YZR 62 1
    • 1 $0.86
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    Chip1Stop TPD1S514-1YZR Cut Tape 1,512
    • 1 $0.439
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    Win Source Electronics TPD1S514-1YZR 24,400
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    Schaffner RS514-1-02

    CMC 120UH 1A 2LN TH
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    DigiKey RS514-1-02 Tray 341 1
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    Master Electronics RS514-1-02
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    • 100 $1.901
    • 1000 $1.826
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    Texas Instruments TPD1S514-1EVM

    EVAL BOARD FOR TPD1S514
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    DigiKey TPD1S514-1EVM Box 24 1
    • 1 $61.25
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    Mouser Electronics TPD1S514-1EVM 1
    • 1 $65.17
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    IDEAL-TEK SA ES5141.CR.BG.ITU

    HP CUTTER SMALL OVAL,FLUSH,ESD
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    DigiKey ES5141.CR.BG.ITU 5 1
    • 1 $70.28
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    S5141 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    51412

    Abstract: Si7116DN
    Text: Si7116DN Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.0078 @ VGS = 10 V 16.4 0.010 @ VGS = 4.5 V 14.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    PDF Si7116DN 07-mm Si7116DN-T1--E3 08-Apr-05 51412

    51412

    Abstract: Si7114DN Si7114DN-T1
    Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    PDF Si7114DN 07-mm Si7114DN-T1 Si7114DN-T1--E3 08-Apr-05 51412

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    PDF Si1902DL OT-363 SC-70 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 21.1 0.0078 @ VGS = 4.5 V 17.4 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    PDF Si7110DN 07-mm Si7110DN-T1--E3 Current7110DN S-51413--Rev. 01-Aug-05

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    PDF Si1902DL OT-363 SC-70 Si1902DL-T1 Si1902DL-T1-E3 08-Apr-05

    SI7110DN-T1-E3

    Abstract: Si7110DN 51413
    Text: Si7110DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0053 @ VGS = 10 V 21.1 0.0078 @ VGS = 4.5 V 17.4 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    PDF Si7110DN 07-mm Si7110DN-T1--E3 08-Apr-05 SI7110DN-T1-E3 51413

    Si7108DN

    Abstract: No abstract text available
    Text: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr


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    PDF Si7108DN 07-mm Si7108DN-T1--E3 08-Apr-05

    KAV60

    Abstract: conn pwr 2 PCB footprint LS-5141P compal HT-297DQ-GQ LS5141 Compal Electronics s5141 100P_0402_50V8J 4P5X
    Text: 5 4 3 2 1 COMPAL CONFIDENTIAL DA2@ DA20000FM10 D LS-5141P REV1 PWR/B H2 H_4P5x2P5N ON/OFF LED LEFT 1 +5VALW +5VS AMB (GREEN) To MB Conn. C +5VALW +5VS +3VALW 1 ON/OFF Button 1 C R1 510_0402_5% R2 200_0402_5% ON/OFFBTN# 2 2 3 2 PWR_SUSP_LED# 4 GOLD_FINGER


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    PDF KAV60 LS-5141P DA20000FM10 HT-297DQ-GQ SKRBAAE010 PSOT24C S5141 405N0L conn pwr 2 PCB footprint compal LS5141 Compal Electronics s5141 100P_0402_50V8J 4P5X

    Si1032X

    Abstract: 51416R
    Text: SPICE Device Model Si1032X Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si1032X 18-Jul-08 51416R

    Untitled

    Abstract: No abstract text available
    Text: Si7114DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 18.3 0.010 @ VGS = 4.5 V 15.9 D TrenchFETr Gen II Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    PDF Si7114DN 07-mm Si7114DN-T1 Si7114DN-T1--E3 7114DN S-51412--Rev. 01-Aug-05

    si1902dl

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    PDF Si1902DL OT-363 SC-70 S-51415 01-Aug-05

    Untitled

    Abstract: No abstract text available
    Text: Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0062 @ VGS = 4.5 V 19.5 0.0098 @ VGS = 2.5 V 15.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    PDF Si7106DN 07-mm Si7106DN-T1--E3 Pulsedi7106DN S-51413--Rev. 01-Aug-05

    73142

    Abstract: Si7106DN-T1-E3
    Text: Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0062 @ VGS = 4.5 V 19.5 0.0098 @ VGS = 2.5 V 15.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low


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    PDF Si7106DN 07-mm Si7106DN-T1--E3 08-Apr-05 73142 Si7106DN-T1-E3

    SI1902DL-T1-E3

    Abstract: Si1902DL Si1902DL-T1
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    PDF Si1902DL OT-363 SC-70 Si1902DL-T1 Si1902DL-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8


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    PDF Si7112DN 07-mm Si7112DN-T1 Si7112DN-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si7112DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 17.8 0.0082 @ VGS = 4.5 V 17.0 COMPLIANT Available D Synchronous Rectification S D 3.30 mm 1 RoHS APPLICATIONS PowerPAK 1212-8


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    PDF Si7112DN 07-mm Si7112DN-T1 Si7112DN-T1--E3 Drain7112DN S-51413--Rev. 01-Aug-05

    Si4816DY-T1-E3

    Abstract: No abstract text available
    Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6


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    PDF Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 S-51414--Rev. 01-Aug-05 Si4816DY-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6


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    PDF Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 18-Jul-08

    51414

    Abstract: No abstract text available
    Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.013 @ VGS = 10 V 10 0.0185 @ VGS = 4.5 V 8.6


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    PDF Si4816DY Si4816DY-T1 Si4816DY--E3 Si4816DY-T1--E3 08-Apr-05 51414

    Si1902DL

    Abstract: Si1902DL-T1 Si1902DL-T1-E3
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


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    PDF Si1902DL OT-363 SC-70 Si1902DL-T1 Si1902DL-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7108DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0049 @ VGS = 10 V 22 0.0061 @ VGS = 4.5 V 19.7 Qg (Typ) 20 D TrenchFETr Gen II Power MOSFET for Ultra Low On-Resistance D New Low Thermal Resistance PowerPAKr


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    PDF Si7108DN 07-mm Si7108DN-T1--E3 Drain-Sou7108DN S-51413--Rev. 01-Aug-05

    siemens im 304

    Abstract: AIL 4M 514100BJ HYB5141Q0BJ HYB514400BJ SIEMENS marking siemens 575 HVB marking Polystyrol capacitors
    Text: H y' b 5 i4 iu u B J /» J t_ -5G/-6G/-7G 4 J A J AAJ . J n A P n!a n _ _ _ _ _ _ _ _ _ _ i - n » l f l 4 i y4 JU4 x i - dic u yn am ic i-laiyi I l i l i n I"-J jft X i I il - i rlidi r r t i1 i r ? A n T tJ 3 I^^UUDJ/DJL. -3U/-OUf-iU _ i_ nrtJit.t *i riAO


    OCR Scan
    PDF -SO/-60/-70 514400BJ HYB5141Q0BJ HYB514400BJ SQJ2S/20 SOJ26/20 siemens im 304 AIL 4M 514100BJ SIEMENS marking siemens 575 HVB marking Polystyrol capacitors

    Untitled

    Abstract: No abstract text available
    Text: R 1D £änSL AS-S 14 ° /A ^ S 1 « E J o iM O l^ O i Fam ily H,gl1 £ & < 2 2 FEATURES GENERAL DESCRIPTION • Super fast break befqre jn a k e switching ton 80ns typ^ tofi'^Sns typ S P S T switches • Power supply currents less than 1juA • “OFF” leakages less than lOOpA @ 25° C


    OCR Scan
    PDF AS-5140 100pA