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    S8136 Search Results

    S8136 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    THS8136PHPR Texas Instruments Triple 10-Bit 180-MSPS Graphics and Video DAC 48-HTQFP 0 to 70 Visit Texas Instruments
    THS8136PHP Texas Instruments Triple 10-Bit 180-MSPS Graphics and Video DAC 48-HTQFP 0 to 70 Visit Texas Instruments
    THS8136IPHPR Texas Instruments Triple 10-Bit 180-MSPS Graphics and Video DAC 48-HTQFP -40 to 85 Visit Texas Instruments
    THS8136IPHP Texas Instruments Triple 10-Bit 180-MSPS Graphics and Video DAC 48-HTQFP -40 to 85 Visit Texas Instruments
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    S8136 Price and Stock

    CUI Inc VMS-81-36

    AC/DC CONVERTER 36V 80W
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    DigiKey VMS-81-36 Box 80
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    Mouser Electronics VMS-81-36
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    Rochester Electronics LLC THS8136PHP

    DAC, 1 FUNC, PARALLEL, WORD INPU
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    DigiKey THS8136PHP Tray 60
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    Texas Instruments THS8136PHP

    IC VIDEO DAC 10BIT 180M 48HTQFP
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    DigiKey THS8136PHP Tray 250
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    Mouser Electronics THS8136PHP
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    Rochester Electronics THS8136PHP 1,577 1
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    • 100 $4.52
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    Texas Instruments THS8136PHPR

    IC VIDEO DAC 10BIT 180M 48HTQFP
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    DigiKey THS8136PHPR Reel 1,000
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    Mouser Electronics THS8136PHPR
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    Rochester Electronics LLC THS8136IPHP

    THS8136 TRIPLE 10-BIT 180-MSPS G
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    DigiKey THS8136IPHP Bulk 52
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    S8136 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


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    PDF IRFP460LC, SiHFP460LC O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFP460LC

    Abstract: SiHFP460LC IRFP460LCP
    Text: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


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    PDF IRFP460LC, SiHFP460LC O-247 11-Mar-11 IRFP460LC IRFP460LCP

    IRLL110

    Abstract: IRLL110PBF IRLL110TRPBF siliconix sot-223 marking
    Text: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel


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    PDF IRLL110, SiHLL110 OT-223 18-Jul-08 IRLL110 IRLL110PBF IRLL110TRPBF siliconix sot-223 marking

    IRFZ34 Datasheet

    Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ34, SiHFZ34 O-220 O-220 18-Jul-08 IRFZ34 Datasheet irfz34 SiHFZ34-E3 irfz34 mosfets

    SiHFU430A

    Abstract: IRFR430A IRFU430A SiHFR430A SiHFR430A-E3 4.5V TO 100V INPUT REGULATOR
    Text: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


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    PDF IRFR430A, IRFU430A, SiHFR430A SiHFU430A O-252) O-251) 18-Jul-08 IRFR430A IRFU430A SiHFR430A-E3 4.5V TO 100V INPUT REGULATOR

    IRFL110 vishay

    Abstract: irfl110pbf IRFL110 SiHFL110 SiHFL110-E3 siliconix sot-223 marking IRFL110, Siliconix
    Text: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


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    PDF IRFL110, SiHFL110 OT-223 18-Jul-08 IRFL110 vishay irfl110pbf IRFL110 SiHFL110-E3 siliconix sot-223 marking IRFL110, Siliconix

    IRFPS35N50L

    Abstract: SiHFPS35N50L SiHFPS35N50L-E3
    Text: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration


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    PDF IRFPS35N50L, SiHFPS35N50L SUPER-247TM 18-Jul-08 IRFPS35N50L SiHFPS35N50L-E3

    IRFPE40 equivalent

    Abstract: IRFPE40 IRFPE450
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 2.0 Available Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


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    PDF IRFPE40, SiHFPE40 O-247 O-247 18-Jul-08 IRFPE40 equivalent IRFPE40 IRFPE450

    IRFZ14PBF

    Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ14, SiHFZ14 O-220 O-220 18-Jul-08 IRFZ14PBF IRFZ14 SiHFZ14-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


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    PDF IRFI9520G, SiHFI9520G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irll110

    Abstract: SiHLL110-E3 SiHLL110
    Text: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel


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    PDF IRLL110, SiHLL110 OT-223 OT-223 12-Mar-07 irll110 SiHLL110-E3

    SiHFL110-E3

    Abstract: IRFL110, Siliconix
    Text: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


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    PDF IRFL110, SiHFL110 OT-223 12-Mar-07 SiHFL110-E3 IRFL110, Siliconix

    inductor 1 mH

    Abstract: No abstract text available
    Text: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)


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    PDF IRFR320, IRFU320, SiHFR320 SiHFU320 IRFR320/SiHFR320) IRFU320/SiHFU320) O-252) O-251) 12-Mar-07 inductor 1 mH

    4.5v to 100v input regulator

    Abstract: No abstract text available
    Text: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Max.) (Ω) VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


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    PDF IRFR1N60A, IRFU1N60A, SiHFR1N60A SiHFU1N60A O-252) O-251) 12-Mar-07 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: IRFPG40, SiHFPG40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.5 Qg (Max.) (nC) 120 • Isolated Central Mounting Hole Qgs (nC) 16 • Fast Switching 65


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    PDF IRFPG40, SiHFPG40 O-247 O-247 O-220 12-Mar-07

    4.5V TO 100V INPUT REGULATOR

    Abstract: No abstract text available
    Text: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


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    PDF IRFR430A, IRFU430A, SiHFR430A SiHFU430A O-252) O-251) IRFR430APbF SiHFR430A-E3 IRFR43merchantability, 4.5V TO 100V INPUT REGULATOR

    irfp440

    Abstract: No abstract text available
    Text: IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 11 Qgd (nC) 30 Configuration • Repetitive Avalanche Rated 0.85 • Isolated Central Mounting Hole


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    PDF IRFP440, SiHFP440 O-247 O-247 O-220 12-Mar-07 irfp440

    IRFP350

    Abstract: No abstract text available
    Text: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


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    PDF IRFP350, SiHFP350 O-247 O-220 12-Mar-07 IRFP350

    irfz34

    Abstract: No abstract text available
    Text: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ34, SiHFZ34 O-220 12-Mar-07 irfz34

    IRFR1N60A

    Abstract: IRFU1N60A SiHFR1N60A SiHFR1N60A-E3 SiHFU1N60A SiHFU1N60A-E3 4.5v to 100v input regulator
    Text: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Max.) (Ω) VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


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    PDF IRFR1N60A, IRFU1N60A, SiHFR1N60A SiHFU1N60A O-252) O-251) 18-Jul-08 IRFR1N60A IRFU1N60A SiHFR1N60A-E3 SiHFU1N60A-E3 4.5v to 100v input regulator

    irfu310

    Abstract: IRFR310 SiHFR310 SiHFR310-E3 SiHFU310 vishay siliconix 99 ipak
    Text: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V 3.6 • Repetitive Avalanche Rated Qg (Max.) (nC) 12 • Surface Mount (IRFR310/SiHFR310) Qgs (nC) 1.9


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    PDF IRFR310, IRFU310, SiHFR310 SiHFU310 IRFR310/SiHFR310) IRFU310/SiHFU310) O-252) O-251) 18-Jul-08 irfu310 IRFR310 SiHFR310-E3 vishay siliconix 99 ipak

    IRFI9520G

    Abstract: No abstract text available
    Text: IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


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    PDF IRFI9520G, SiHFI9520G O-220 18-Jul-08 IRFI9520G

    IRFPS40N50L

    Abstract: SiHFPS40N50L
    Text: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 • Lower Gate Charge Results in Simpler Drive


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    PDF IRFPS40N50L, SiHFPS40N50L SUPER-247TM 18-Jul-08 IRFPS40N50L

    IRP460

    Abstract: IRFP460A SiHFP460A irp460a
    Text: IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current


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    PDF IRFP460A, SiHFP460A O-247 18-Jul-08 IRP460 IRFP460A irp460a