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    Untitled

    Abstract: No abstract text available
    Text: IRFZ14_RC, SiHFZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF IRFZ14 SiHFZ14 AN609, CONFIGURATI8-Aug-10 7073m 5021m 4092u 3752m

    IRFZ14L

    Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L-E3 SiHFZ14S-E3 SiHFZ14STL

    IRFZ14PBF

    Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ14, SiHFZ14 O-220 O-220 18-Jul-08 IRFZ14PBF IRFZ14 SiHFZ14-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S-L_RC, SiHFZ14S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF IRFZ14S-L SiHFZ14S-L AN609, 5914m 0559m 6073u 3031m 5735m

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    IRFZ14

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration


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    PDF IRFZ14, SiHFZ14 O-220 12-Mar-07 IRFZ14

    IRFZ14

    Abstract: SiHFZ14 SiHFZ14-E3 D. S. /N. 1677
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration


    Original
    PDF IRFZ14, SiHFZ14 2002/95/EC O-220 O-220 18-Jul-08 IRFZ14 SiHFZ14-E3 D. S. /N. 1677

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


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    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFZ14

    Abstract: SiHFZ14 SiHFZ14-E3
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


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    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFZ14 SiHFZ14-E3

    IRFZ14L

    Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L O-263) O-262) IRFZ14L IRFZ14S IRFZ14STRL SiHFZ14STL SiHFZ44L

    SiHFZ44L

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)


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    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L IRFZ14S/SiHFZ14S) IRFZ14L/SiHFZ14L) 18-Jul-08 SiHFZ44L

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


    Original
    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


    Original
    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)


    Original
    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L IRFZ14S/SiHFZ14S) IRFZ14L/SiHFZ14L) 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


    Original
    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21


    Original
    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)


    Original
    PDF IRFZ14S, IRFZ14L, SiHFZ14S SiHFZ14L 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


    Original
    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements


    Original
    PDF IRFZ14, SiHFZ14 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A