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    ZD602

    Abstract: B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C B CPU :Dothan533


    Original     		PDF TP1765 TP1714 TP1715 TP1716 TP1717 TP1718 TP1719 TP1720 TP1721 TP1722 ZD602 B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P

    ST T4 D560

    Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom


    Original     		PDF YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4

    ALC122

    Abstract: ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C CPU :Dothan533 Chip Set :ALVISO & ICH6-M


    Original     		PDF CONTROLLER62 TP1763 TP1764 TP1765 TP1714 TP1715 TP1716 TP1717 TP1718 TP1719 ALC122 ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2

    K7D161871B-HC30

    Abstract: K7D161871B-HC40 K7D163671B-HC33 K7D163671B-HC37 K7D163671B-HC40
    Text: Advance K7D163671B K7D161871B 512Kx36 & 1Mx18 SRAM Document Title 16M DDR SYNCHRONOUS SRAM Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial document. Feb. 2003 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF K7D163671B K7D161871B 512Kx36 1Mx18 K7D16366 012MAX K7D161871B-HC30 K7D161871B-HC40 K7D163671B-HC33 K7D163671B-HC37 K7D163671B-HC40

    samsung s3c2440 user manual

    Abstract: S3C2440 samsung arm920t s3c2440a 300 400mhz S3C2440A s3c2440 errata S3C2440 application note Samsung S3C2440 Datasheet hoW ADC WORKS IN SAMSUNG S3C2440A s3c2440A ARM920T samsung s3c2440 arm920t
    Text: S3C2440A 32-BIT RISC MICROPROCESSOR USER'S MANUAL Preliminary Revision 0.13 (June 3, 2004) 2004.06.03 S3C2440A RISC MICROPROCESSOR 1 PRODUCT OVERVIEW PRODUCT OVERVIEW INTRODUCTION This manual describes SAMSUNG's S3C2440A 16/32-bit RISC microprocessor. SAMSUNG’s S3C2440A is


    Original     		PDF S3C2440A 32-BIT S3C2440A 16/32-bit ARM920T samsung s3c2440 user manual S3C2440 samsung arm920t s3c2440a 300 400mhz s3c2440 errata S3C2440 application note Samsung S3C2440 Datasheet hoW ADC WORKS IN SAMSUNG S3C2440A s3c2440A ARM920T samsung s3c2440 arm920t

    BUZ 215 diagram

    Abstract: KS57C21632 KS57P21632 SAM47 AS50D-A BT 9843
    Text: Product Overview Address Spaces Addressing Modes Memory Map KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


    Original     		PDF KS57C21632/P21632 KS57C21632 SAM47 up-to-896-dot 100-pin COM15 COM13 BUZ 215 diagram KS57P21632 SAM47 AS50D-A BT 9843

    SAM47

    Abstract: SEG8-SEG11 KS57C21208 KS57P21208 KS88C21208 mux 30 chanel to e1 fa9hf 7AH1
    Text: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set KS57C21208/P21208 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21208 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


    Original     		PDF SAM47 KS57C21208/P21208 KS57C21208 SAM47 up-to-96-dot 16-bit 44-pin 42-pin SEG8-SEG11 KS57P21208 KS88C21208 mux 30 chanel to e1 fa9hf 7AH1

    Untitled

    Abstract: No abstract text available
    Text: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set KS57C2916/P2916 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C2916 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers .


    Original     		PDF SAM47 KS57C2916/P2916 KS57C2916 SAM47 up-to-704-dot 80-pin KS57C291 SEG11

    KM44C1000J

    Abstract: KM44C1OOOZ KM44C1OOOJ electronics symbol
    Text: SAMSUNG SEMICONDUCTOR INC S3E D 7TbmMS D0GÔ420 7 ig Electronics SAMSUNG K M 4 4 C 1 0 0 0 J /Z r - ^ - 3 3 - I7 □ PRELIMINARY KM 44C1000J/Z Fast Page Mode 1 M X 4 Bit CMOS Dynamic RAM FEBRUARY 1990 GENERAL DESCRIPTION FEATURES The Samsung KM44C1OOOJ/Z is a high speed CMOS


    OCR Scan     		PDF 44C1000J/Z KM44C1OOOJ/Z KM44C1 20-LEAD KM44C1000J KM44C1OOOZ KM44C1OOOJ electronics symbol

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


    OCR Scan     		PDF KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    KMM366S823BT-GL

    Abstract: No abstract text available
    Text: KMM366S823BT PC100 SDRAM MODULE KMM366S823BT SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S823BT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S823BT KMM366S823BT PC100 8Mx64 400mi! 168-pin KMM366S8236T KMM366S823BT-GL

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M X 36 DRAM SIMM Using 4M x16 & Q uad CAS 4M x4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B


    OCR Scan     		PDF KMM5364003BSW/BSWG KMM5364003BSW/BSWG KMM5364003B 4Mx36bits KMM5364003B 4Mx16bits 72-pin KMM5364003Bis

    DG113

    Abstract: Samsung Capacitor sse samsung pram
    Text: a KM41V4000LL «S SAMSUNG 4M x 1 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG E LECTRONI CS I NC SSE FEATURES 7 ^4 1 4 2 D D 11355 2 = 1 2 _ ISMGK GENERAL DESCRIPTION . Performance range: KM41V4000LL - 7


    OCR Scan     		PDF KM41V4000LL KM41V4000LL 130ns 150ns 180ns 304x1 KM41V4000/L DG113 Samsung Capacitor sse samsung pram

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 256Kx36 & 512Kx18 SRAM KM736V8011 KM718V8011 Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Preliminary specification release Mar. 1999 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    OCR Scan     		PDF 256Kx36 512Kx18 KM736V8011 KM718V8011 KM718

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    OCR Scan     		PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits 4Mx16bits 72-pin KMM5364005BSW

    tc 144 e

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E320 8 0BK KMM372E320(8)0BK EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E320(8)0B consists of thirty-six CMOS 16Mx4bits


    OCR Scan     		PDF KMM372E320 16Mx4, 32Mx72bits 16Mx4bits 400mil 168-pin tc 144 e

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C40 8 4BS KMM364C40(8)4BS Fast Page Mode 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C40(8)4B is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C40(8)4B consists of four CMOS 4Mx16bits DRAMs


    OCR Scan     		PDF KMM364C40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM49V512A/AL/ALL • 7 ^ 4 1 4 2 OOlS'iS'l 43^ I SMGK CMOS DRAM 512K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM49V512A/AL/ALL is a CMOS high speed 524,288 b it x 9 Dynam ic Random A ccess


    OCR Scan     		PDF KM49V512A/AL/ALL KM49V512A/AL/ALL KM49V512A/AL/ALL-7 130ns KM49V512A/AL/ALL-8 150ns 28-LEAD

    uras 14 pinout

    Abstract: No abstract text available
    Text: K M 4 4 V 1 0 0 0 /L J Q SAM SUNG im x 4 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG EL ECTRONI CS INC FEATUHtö •I SSE 7^4142 0 0 11 3 4 5 ATT « S I I G K GENERAL DESCRIPTION 2 V I *7 The Samsung KM 44V1000/L is a high speed


    OCR Scan     		PDF KM44V1000/L 130ns 150ns 180ns 44V1000/L 576x4 uras 14 pinout

    Untitled

    Abstract: No abstract text available
    Text: KM4132G512A CMOS SGRAM 16Mbit SGRAM 256K X 32bit x 2 Banks Synchronous Graphic RAM LVTTL Revision 1.1 June 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Jun. 1999 ELECTRONICS KM4132G512A CMOS SGRAM


    OCR Scan     		PDF KM4132G512A 16Mbit 32bit KM4132G512A-5/7/8 20ns/21 ns/20ns KM4132G512A-7/8 67ns/68ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC G2 Synchronous 4-Bit Up/Down Decade Counters KS54HCTLS 1 Q f KS74HCTLS FEATURES DESCRIPTION • Single down/up count control line • Look-ahead circuitry enhances speed of cascaded counters • Fully synchronous In count modes


    OCR Scan     		PDF KS54HCTLS KS74HCTLS S4/74LS KS74HCTLS: KS54HCTLS: 7Tb4142 90-XO 14-Pin

    KM658128

    Abstract: No abstract text available
    Text: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)


    OCR Scan     		PDF KM658128 120ns 190ns KM658128 576-bit 200mW 5K/1-91

    Q022B

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		PDF KMM53616000AKG KMM53616000AK 16Mx36 16Mx4bit 32-pin 16Mx1bit 24-pin 72-pin Q022B

    km418c256

    Abstract: KM418C256J
    Text: PRELIMINARY KM418C256 CMOS DRAM 256'KX 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 8 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 18 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM418C256 km418c256 KM418C256J