2N2222
Abstract: 2N2904 BY205-400 D44H11 D45H11 TIPL770
Text: TIPL770 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK MARCH 1984 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C
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TIPL770
O-220
2N2222
2N2904
BY205-400
D44H11
D45H11
TIPL770
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Untitled
Abstract: No abstract text available
Text: TIPL770 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 2.5 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C TO-220 PACKAGE TOP VIEW 850 Volt Blocking Capability B 1 C 2 50 W at 25°C Case Temperature
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Original
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PDF
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TIPL770
O-220
SAP770AC
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Untitled
Abstract: No abstract text available
Text: TIPL770 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 2.5 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C TO-220 PACKAGE TOP VIEW 850 Volt Blocking Capability B 1 C 2 50 W at 25°C Case Temperature
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Original
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PDF
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TIPL770
O-220
SAP770AC
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2N2222
Abstract: 2N2904 BY205-400 D44H11 D45H11 TIPL770 by205
Text: TIPL770 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 850 Volt Blocking Capability C 2 ● 50 W at 25°C Case Temperature
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Original
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PDF
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TIPL770
O-220
SAP770AC
2N2222
2N2904
BY205-400
D44H11
D45H11
TIPL770
by205
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by205
Abstract: BY205-400 TRANSISTOR 2n2904 diode by205 by205 diode TIPL770 2N2222 2N2904 D44H11 D45H11
Text: TIPL770 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 850 Volt Blocking Capability C 2 ● 50 W at 25°C Case Temperature
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Original
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PDF
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TIPL770
O-220
by205
BY205-400
TRANSISTOR 2n2904
diode by205
by205 diode
TIPL770
2N2222
2N2904
D44H11
D45H11
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