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    SBR30A45PT

    Abstract: APD Semiconductor 125OC
    Text: SBR30A45PT Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF AV Rectangular Waveform VRRM VF@15A, Tj=125OC Tj (operating/storage) Device optimized for low forward voltage drop to


    Original     		SBR30A45PT 125OC O-247 150OC SBR30A45PT APD Semiconductor 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: DATE: 25th April, 2013 PCN #: 2102 PCN Title: Device End of Life Dear Customer: This is an announcement of change s to products that are currently being offered by Diodes Incorporated.


    Original     		GBJ2508 DDTB123EKâ DDTB123ECâ DDTD123TKâ DDTD123TCâ GBPC2510* GBJ2510 DDTB123TKâ DDTB123TCâ DDTD123YKâ PDF

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA PDF