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    SCH2080 Price and Stock

    ROHM Semiconductor SCH2080KEC

    SICFET N-CH 1200V 40A TO247
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    Quest Components SCH2080KEC 4
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    Ameya Holding Limited SCH2080KEC 2 1
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    Vishay Angstrohm SCH2080KEC

    POWER FIELD-EFFECT TRANSISTOR, 40A I(D), 1200V, 0.117OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247
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    Quest Components SCH2080KEC 16
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    Quest Components SCH2080KE 3
    • 1 $198.714
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    SCH2080 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SCH2080KEC ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 40A TO-247 Original PDF

    SCH2080 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sch2080

    Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
    Text: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed


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    SCH2080KE O-247 R1120A sch2080 SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original
    SCH2080KE O-247 R1102B PDF

    Solar Charge Controller driver circuits

    Abstract: sch2080
    Text: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed


    Original
    SCH2080KE O-247 R1120A Solar Charge Controller driver circuits sch2080 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original
    SCH2080KE O-247 R1102S PDF

    SCH2080KE

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original
    SCH2080KE O-247 R1102S SCH2080KE PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original
    SCH2080KE O-247 R1102B PDF

    SiC POWER MOSFET

    Abstract: No abstract text available
    Text: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


    Original
    SCH2080KE O-247 SCH2080KE R1120A SiC POWER MOSFET PDF

    sch2080

    Abstract: SCH2080KE
    Text: SCH2080KE SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery


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    SCH2080KE O-247 SCH2080KE R1120A sch2080 PDF

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


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    000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ PDF

    ssd0323

    Abstract: DEM09S08QG8 OLED HCS08 SPI code example assembly OS128064PK27MY0B00 smd sensor 80L DEMO9S08QG8 128X64 character font table MC9S08QGC TPS7634ID
    Text: Freescale Semiconductor Application Note Document Number: AN3415 Rev. 0, 03/2007 OLED Display Driver for the HCS08 Family OLED Driver Demonstration for 4 Bits-per-Pixel Displays by: Wolfgang Bihlmayr Systems Engineering Munich, Germany This application note describes how to interface an


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    AN3415 HCS08 ssd0323 DEM09S08QG8 OLED HCS08 SPI code example assembly OS128064PK27MY0B00 smd sensor 80L DEMO9S08QG8 128X64 character font table MC9S08QGC TPS7634ID PDF