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SD1420 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
SD1420	Honeywell	Silicon Photodiode	Original	PDF
SD1420	STMicroelectronics	800-900 MHz BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS	Original	PDF
SD1420	Microsemi	RF & Microwave Transistors 860-960MHz Class AB, Base Stations	Scan	PDF
SD1420	Spectronics	Product Data Book (Shortform)	Scan	PDF
SD1420	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
SD1420-002	Honeywell	Optical Sensors - Photodiodes, Sensors, Transducers, PHOTODIODE COAXIAL PACK	Original	PDF
SD1420-002L	Honeywell	Optical Sensors - Photodiodes, Sensors, Transducers, PHOTODIODE COAXIAL PACK	Original	PDF
SD1420-01	Advanced Power Technology	RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS	Original	PDF
SD1420-01	Microsemi	RF NPN Transistor	Scan	PDF
SD1420-01	STMicroelectronics	RF & Microwave Components Data Book 1993	Scan	PDF
SD-1420-1	Spectronics	Optoelectronic Components	Scan	PDF
SD-1420-2	Spectronics	Optoelectronic Components	Scan	PDF
SD1420-2	Spectronics	Product Data Book (Shortform)	Scan	PDF
SD1420-2L	Spectronics	Product Data Book (Shortform)	Scan	PDF

SD1420 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
H 122 TIF Abstract: SD1420 SE1450 SE1470 silicon photodiode spectrally matched photodiode Text: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF	Original	PDF	SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX H 122 TIF SE1450 silicon photodiode spectrally matched photodiode
SD1420 Abstract: SE1450 SE1470 Text: 17 September 1997 SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes	Original	PDF	SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX SE1450
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION	Original	PDF	SD1420-01 SD1420-01 SD1420.
M122 Abstract: SD1420 SD1420-01 Text: SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION P OUT = 2.1 W MIN. WITH 9.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1420 BRANDING	Original	PDF	SD1420 SD1420 SD1420-01. M122 SD1420-01
GaAs 1000 nm Infrared Emitting Diode Abstract: SD1410 SD1420 SD1440 SE1450 Text: 17 September 1997 SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55¡C to +125¡C) • Mechanically and spectrally matched to SD1420	Original	PDF	SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Emitting Diode SD1420
M122 Abstract: SD1420 SD1420-01 Text: SD1420 RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS . . . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 2.1 W MIN. WITH 9.0 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE SD1420 BRANDING	Original	PDF	SD1420 SD1420 SD1420-01. M122 SD1420-01
GaAs 1000 nm Infrared Diode, Abstract: SD1410 SD1420 SD1440 SE1450 Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24¡ nominal beam angle • 935 nm wavelength • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and	Original	PDF	SE1450 SD1420 SD1440 SD1410 INFRA-63 SE1450 SE1450-XXXL) GaAs 1000 nm Infrared Diode, SD1420
NPN planar RF transistor Abstract: SD1420 SD1420-01 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION	Original	PDF	SD1420-01 SD1420-01 SD1420. NPN planar RF transistor SD1420
SD1420 Abstract: SE1450 SE1470 SD1420-XXX Text: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package • 24¡ nominal acceptance angle • Wide operating temperature range (- 55¡C to +125¡C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes INFRA-63.TIF	Original	PDF	SD1420 SE1450 SE1470 INFRA-63 SD1420 SD1420-XXXL) SD1420-XXX SE1450 SD1420-XXX
A 69157 scr Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3 Text: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer	Original	PDF	90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850 OPB933W55Z 08F2750 OPB963T55 08F2755 A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Untitled Abstract: No abstract text available Text: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package «•* » 24° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes	OCR Scan	PDF	SD1420 SE1450 SE1470 SD1420 SD1420-XXXL) SD1420-XXX SD1420-XXXL
1420-002L Abstract: ly062 Text: SD1420 Silicon Photodiode FEATU R ES • Compact, metal can coaxial package • 24 nom inal acceptance angle • W ide operating tem perature range (-55 C to +125 C) • M echanically and spectrally m atched to SE1450 and SE1470 infrared em itting diodes	OCR Scan	PDF	SD1420 SE1450 SE1470 SD1420-XXXL) SD1420-XXX 1420-002L ly062
diode t25 4 j5 Abstract: No abstract text available Text: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420	OCR Scan	PDF	SE1470 SD1420 SD1440 SD1410 INFRA-63 SE1470 SE1470-XXXL) diode t25 4 j5
Untitled Abstract: No abstract text available Text: /T T SGS-THOMSON ^7# SD1420 RF & M I C R O W A V E T R A N S I S T O R S _ 8 0 0 - 9 0 0 M H z BASE S T A T I O N A P P L I C A T I O N S • . ■ . ■ . 860 - 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION p OUT = 2.1 W MIN. WITH 9.0 dB GAIN	OCR Scan	PDF	SD1420 SD1420 SD1420-01.

icom sc 1025 Abstract: UHF UHF Transistors Avionics SD1512 81416-012 M105 MSC1075M MSC1090M Text: RF NPN Power Transistors P art N um ber A M 0608-020 AM 0608-070 A M 80610-018 A M 0710-300 SD1495 SD1496 SD 1400-02 SD1420-01 ; SD 1400-03 SD 1495-03 S D 1496-03 SD1550 SD1512 M SC 81069 SD1853-01 SD1171 S D 1520-08 S D 1520-01 S D 1524-01 SD 1526-01 SD 1526-08	OCR Scan	PDF	SD1495 SD1496 SD1420-01 SD1550 SD1512 SD1853-01 SD1171 1015M 1075M icom sc 1025 UHF UHF Transistors Avionics 81416-012 M105 MSC1075M MSC1090M
GaAs 1000 nm Infrared Diode, Abstract: SE1450-002L Text: SE1450 GaAs Infrared Emitting Diode FEATURES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and	OCR Scan	PDF	SE1450 SD1420 SD1440 SD1410 SE1450 SE1450-XXXL) SE1450-XXX SD1440 GaAs 1000 nm Infrared Diode, SE1450-002L
Untitled Abstract: No abstract text available Text: m jm m R F P r e v e is M ic r o s m e m i 140 Cormneree Drive Montgomeryville, PA 18936-1013 Te : {21$} 631-9840 SD1420 RF & MICROWAVE TRANSISTORS 860-960MHz CLASS AB BASE STATÍON » FREQUENCY S60-960MH2 « p Q w tR o u r s .iw « VGLTAGE 24V « POWER GASíSi	OCR Scan	PDF	SD1420 860-960MHz S60-960MH2 D1420
MS1601 Abstract: MS1529 MS1600 Text: UHF Applications Cellular Base Station 860 - 960 MHz PART NO. FREQ. Pout Pin GAIN 6jc COB PKG MHz Min (W) (W) Min (dB) Vce (V) Icq (mA) Max (°C/W) Max STYLE SD1420-01 860-960 0.9 0.1 9.5 24 125 20 5 M123 MS1600 860-960 2.1 0.27 9 24 200 20 5 M122 MS1601	OCR Scan	PDF	SD1420-01 MS1600 MS1601 MS1451 MS1452 MS1453 MS1529 MS1583 MS1578 2x250
di42o Abstract: 25CC M122 SD1420 SD1420-01 SD1423 Text: M /Irl/Cf H r» f ! / / P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive ivivsi i i u u i i i ceryville, i y v i n e , rPA n 18936-1013 i i u i «i M ontgom Tel: 215 631-9840 A M M A SD1420 RF & MICROWAVE TRANSISTORS 860-960MHz CLASS AB BASE STATION	OCR Scan	PDF	860-960MHZ 960MHz SD1420 SD1420 SD1423. di42o 25CC M122 SD1420-01 SD1423
M142 Abstract: M118 m169 SD1400-03 M175 SD1426 SD1680 M208 SD1400-02 SD1414 Text: SILICON POWER TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SGS-THOMSON 800/900 MHz transistors utilize a proven refractory-gold metallization system to ensure excellent long-term reliability and device ruggednejss.	OCR Scan	PDF	SD1414 SD1400-02 SD1496 SD1426 SD1420* SD1398 SD1423 SD1424 SD1425 SD4017 M142 M118 m169 SD1400-03 M175 SD1680 M208
SD-5421-2 Abstract: SD-3421-2 SD-3422-2 sd3421-2 SD-2420-1 34222 SD-1420-2 SD-2420-2 SD-3420-1 SD-3420-2 Text: W AVELENGTH, nanometers WAVELENGTH, nanometers F IG U R E Z SPECTRAL RESPONSIVITY FIGURE 1. SPECTRAL RESPO NSIVITY PHOTODIODES SILICO N OPTICAL/ELECTRICAL CHARACTERISTICS (25°C) PARAMETER LIG H T CURRENT T E S T C O N D IT IO N r = 20V H as shown SYM BO L	OCR Scan	PDF	SD-1420-1t SD-1420-2Ã SD-2420-1 SD-5420-1 SD-5420-2 SD-5421-2 SO-5422-2 SD-1420-2L) SD-1420 SD-2420 SD-3421-2 SD-3422-2 sd3421-2 34222 SD-1420-2 SD-2420-2 SD-3420-1 SD-3420-2
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	PDF	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: S filili SILICON POWER TRANSISTORS 800/900 MHz TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SG S-THO M SO N 800/900 MHz transistors utilize a proven refractory-g old metallization system to ensure excellent long-term reliability and	OCR Scan	PDF	SD1414 SD1420* SD1398 SD1423 SD1424 SD1425 SD4017 SD4701 SD1650 SD4600

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SD1420 Datasheets (14)

SD1420 Datasheets Context Search

H 122 TIF

SD1420

Untitled

M122

GaAs 1000 nm Infrared Emitting Diode

M122

GaAs 1000 nm Infrared Diode,

NPN planar RF transistor

SD1420

A 69157 scr

Untitled

1420-002L

diode t25 4 j5

Untitled

icom sc 1025

GaAs 1000 nm Infrared Diode,

Untitled

MS1601

di42o

M142

SD-5421-2

Motorola transistors MRF 947

TDA0161 equivalent

Untitled