SDF4NA100 Search Results

SDF4NA100 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SDF4NA100		Solitron Devices	VDS (V) =, Id Continuous Tc=25C (A) = 4.4, Idm Pulsed (A) = 17.6, RDS (On) (Ohms)...		Scan	PDF
SDF4NA100JAAD		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET		Scan	PDF
SDF4NA100JAAS		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET		Scan	PDF
SDF4NA100JAAU		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET		Scan	PDF
SDF4NA100JABD		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET		Scan	PDF
SDF4NA100JABS		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET		Scan	PDF
SDF4NA100JABU		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET		Scan	PDF
SDF4NA100SXH		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET		Scan	PDF

SDF4NA100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Æ lltron PRODUCT DEVICES.INC. 1000V, 4 .4A, 4 .0 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D ra in - S o u rc e Vo 1t . 1 D rain-G ate Voltage (RGS-1.0Mo ) (1) Gate-Source V oltage Con t inuous D rain Current Continuous (Tc = 25* C) D ra in C u rre n t P u ls e d ( 3 )	OCR Scan	SDF4NA100 11age	PDF
Untitled Abstract: No abstract text available Text: Æ iitro n PRODUCT D E V I CE S .I N C. l177 BLUE H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 TEL: 407 048-4311 • TLX: 51-3435 « F A X : N-CHANNEL ENHANCEMENT MOS FET 1000V, 4 . 4 A , 4 . 0 Q (407) 863-594G ABSOLUTE MAXIMUM RATINGS PARAMETER	OCR Scan	863-594G 63bfibD2	PDF
Untitled Abstract: No abstract text available Text: Æ lltra n PRODUCT DEVICES,INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH, FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-343S • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 1000V, SYMBOL Dr a i n - S o u r c e Vo 1t . ( 1 )	OCR Scan	51-343S SDF4NA100 Tc--25 di/dt-100A	PDF
ic l00a Abstract: source ic SDF4NA100 Text: =Æntran _ p r q d u c t c a tâ lQ ' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Drain-Source Volt. l Drain-Gate Vo 1tage ( R g s - i .o m o ) (1) Gate-Source Voltage Cont inuous Drain Current Continuous (Tc * 25*C) Drain Current Pulsed(3)	OCR Scan	SDF4NA100 MIL-S-19500 300mS, ic l00a source ic	PDF
SDF4NA100 Abstract: A47 diode Text: Æwtxon [PRODUCT DEVICES.INC. CÂTÂLÔi N-CHANNEL ENHANCEMENT MOS FET 1000V, 4.4A, 4 . on ABSOLUTE- MAXIMUM RATINGS SYMBOL PARAMETER UNITS D r a in - S o u r c e V o l t . l D ra in -G a te V o lta g e (R gs-1-OM o ) (1) Gate-Source V o lta g e Con 11nuous	OCR Scan	300nS. SDF4NA100 MIL-S-19500 A47 diode	PDF
Untitled Abstract: No abstract text available Text: - SOLITRON DEVICES INC 4ÖE D • flBbflbQS ÜÜD3S77 D73 ■ S O D J f o W t X i m devices inc PRODUCT 'rg'&'fi N-CHANNEL ENHANCEMENT MOS FET W a llis 1000V, 4.4A. 4.0 n ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL Drain-Source Volt. l Drain-Gate Voltage	OCR Scan	D3S77 300nS.	PDF