eeprom 2816
Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel
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2864B
AT28HC16
AT28C64
AT28C64E
AT28C64X
AT28HC64
AT28PC64
AT28C64F
AT28C2S6
AT28C256F
eeprom 2816
2816A eeprom
Atmel eeprom Cross Reference
eeprom Cross Reference
EEPROM 2864 INTEL
28C64 EEPROM
xicor 28C64
Xicor 28C010
Xicor 2864
intel 2864
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PDF
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VALOR ST7033
Abstract: sT7033 8502 8502a plcc trasmitter "aui transformer" OUI15 CAP_TH 9346 EEPROM seeq EM2C
Text: 8502 8502 Ethernet MII to AUI Interface Adapter 98210 This document is an LSI Logic document. Any reference to SEEQ Technology should be considered LSI Logic. Note: Check for latest Data Sheet revision before starting any designs. SEEQ Data Sheets are now on the Web, access
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Original
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NQ8502
NQ80220
MD400157/D
VALOR ST7033
sT7033
8502
8502a
plcc trasmitter
"aui transformer"
OUI15
CAP_TH
9346 EEPROM
seeq EM2C
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PDF
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75a5
Abstract: 48F010-200 47F010-200 47F010-250 47F010-300 48F010-250 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25
Text: - 158 — 28 F O 1O ¥ 7. 'f 7 f* > VDD as -h /m %. % «i ns 0-71) 200 200 75 50 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 47F010-250 SEEQ 0-70 250 250 100 60 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 (*C> TOD •ax (ns) 1 A SEEQ 45 TOH US 47F01Q-200
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47F010-200
47F010-250
47F010-300
48F010-200
48F010-250
28F010(
75a5
48F010-300
AT29C010-12
AT29C010-20
AT29C010-25
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PDF
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D28F512
Abstract: flash eeprom D28F010
Text: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent
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D28F512
D28F010
MC48F512
MC48F010
64KX8
48F512
48F010
48F010
1024K
flash eeprom
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PDF
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Untitled
Abstract: No abstract text available
Text: eeeo 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • ■ ■ ■ ■ ■ ■ ■ The 48F010 is a 1024K bit CMOS FLASH EEPROM organizedas 128Kx8bits. SEEQ‘s48F010 brings together the high density and cost effectiveness of UVEPROMs,
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OCR Scan
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48F010
1024K
48F010
128Kx8bits.
s48F010
MD400063/A
MD400063/A
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PDF
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Untitled
Abstract: No abstract text available
Text: seeQ 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Description Features • ■ 128K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ ■ ■ Input Latches tor Writing and Erasing
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OCR Scan
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48F010
1024K
48F010
128Kx8bits.
s48F010
MD400063/A
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PDF
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F65535
Abstract: 74LS4S ST L 6203
Text: SEEQ Technology, Incorporated 80C04A AutoDUPLEX CMOS Ethernet Data Link Controller March 1994 PRELIMINARY Features • Pinout and function compatible with the 80C04 - 4 new Transmit Packet Statua bits Indicating following transmit packet status conditions:
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80C04A
80C04
30C04
F65535
74LS4S
ST L 6203
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PDF
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Untitled
Abstract: No abstract text available
Text: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Description Features m Military and Extended Temperature Range SEEO’s E/M28C64 is a CMOS 5Vonty, 8 K x8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ’s advanced 1.25 micron
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OCR Scan
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E/M28C64
E/M28C64
M28C64
MD400001/D
28C64
125-C
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PDF
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48F512
Abstract: No abstract text available
Text: seeQ 48F512 512K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • 64K Byte Flash Erasable Non-Volatile Memory ■ Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ Input Latches for Writing and Erasing The 48F512is a 512Kbit CMOS FLASH EEPROM organ
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OCR Scan
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48F512
48F512is
512Kbit
48F512
MD400062/A
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PDF
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Untitled
Abstract: No abstract text available
Text: seeQ 47F512 512K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET I Block Diagram Features • 64K Byte Flash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Low Power CMOS Process ■ Flash EPROM Cell Technology ■ Fast Byte Write: 225 ps max
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OCR Scan
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47F512
MD400076/-
47F512
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PDF
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m2817a
Abstract: 16K Electrically Erasable PROMs
Text: E/M2817A Timer E2 16K Electrically Erasable PROMs October 1989 Features Description • Military and Temperature Range • -55° C to + 1251C: M2817A Military • -4 0 0 C to +85° C: E2817A (Extended) SEEQ’s M2817A is a 5 Vonly, 2Kx 8 electrically erasable
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E/M2817A
1251C:
M2817A
E2817A
M2817A
MD400015/B
16K Electrically Erasable PROMs
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PDF
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VALOR ST7033
Abstract: ST7033 "aui transformer" "aui transformers" "Attachment Unit Interface" lsi AUI lsi S553-1006 T55 transformer datasheet t90 series SCHEMATIC mda
Text: 8502 8502 Ethernet MII to AUI Interface Adapter 98210 Features Note: Check for latest Data Sheet revision before starting any designs. • Single Chip Connecting MII and AUI Interfaces SEEQ Data Sheets are now on the Web, at www.lsilogic.com. ■ AUI Interface to Ethernet Transceiver
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Original
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MD400157/D
NQ8502
NQ80220
VALOR ST7033
ST7033
"aui transformer"
"aui transformers"
"Attachment Unit Interface" lsi
AUI lsi
S553-1006
T55 transformer datasheet
t90 series
SCHEMATIC mda
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PDF
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72720
Abstract: 1S34 TP register file
Text: SEEd TECHNOLOGY INC Tfl D e J 611^533 0D015H7 ä 98D 01227 8 1 1 9 2 3 3 SEEQ TECHNO L O G Y INC S@ Q D T -W-19-05 72720 Self-Adaptive E2 Single Chip Microcomputer March 1987 PRELIMINARY DATA SHEET Features Description • On Chip 5V EEPROM Program Memory: 2 K x 8
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0D015H7
-W-19-05
Cycleas400ns
10MHz
250ns
16MHz
MD400Q05/-
72720
1S34 TP
register file
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PDF
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Untitled
Abstract: No abstract text available
Text: ISIIRIIM M ' 8502 •■■ Ethernet Mil to AUI Interface Adapter 98210 This document is an LSI Logic document. Any reference to SEEQ Technology should be considered LSI Logic. Features ■ Single Chip Connecting Mil and AUI Interfaces ■ AUI Interface to Ethernet Transceiver
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MD400157/D
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PDF
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SEEQ 52B33
Abstract: seeq52b33 seeq eeprom
Text: 52B33/52B33H 64K Electrically Erasable PROM October 1987 Features Description • SEEQ’s 52B33 is a 8 1 9 2 x8 bit, 5 volt electrically erasable programmable read only memory EEPROM which is specified over a 0°C to 70'JC temperature range. Data retention is specified to be greater than 10 years. The
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52B33/52B33H
52B33/52B33H;
52B33H
52B33
52B33
200ns
MD400008/B
SEEQ 52B33
seeq52b33
seeq eeprom
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PDF
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Untitled
Abstract: No abstract text available
Text: 28C65 Timer E2 64K Electrically Erasable PR O M October 1989 Features Description • C M O S Technology ■ Lo w P ow er SEEO's 28C65 is a CMOS 5V only, 8K x 8 Electrically Erasable Programmable Read Only Memory EEPHOM . It is manufactured using SEEQ’s advanced 1.25 micron
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28C65
28C65
MD400025/C
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PDF
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48128
Abstract: 27128 eprom MD4000 EEPROM 27128
Text: O c to b e r 1987 PRELIMINARY DATASHEET Features Description m 128K 16K x 8 • Pin Com patible to 2 7 1 2 8 EPROM ■ Low Cost Non-Volatile Memory ■ Chip E r a s e . . . Electrically SEEQ’s 48128 is a new 128K (16K x 8) memory device which combines both EEPROM and EPROM
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OCR Scan
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MD400018/A
100ms.
MD400018/A
16Kx8
48128
27128 eprom
MD4000
EEPROM 27128
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PDF
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Untitled
Abstract: No abstract text available
Text: KT48 000Q FLASH EEPROM Programmer Features Description • ■ KT48 is a FLA S H E E P R O M program m er from SEEQ Technology. The com plete un it consists o f a half-card size hardware board, a ribbon cable connected to a 40-pin Z IF D IP socket and M S /D O S com patible software. The p ro
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40-pin
128K-bit
MD400058/-
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SH EET 72720 Self-Adaptive E2 Single Chip Microcomputer March 1987 Features Description • On C hip 5V E E P R O M Program Mem ory. 2 K x 8 The Seeq 72720 is a full function single chip micro com puter fabricated in N channel silicon gate
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OCR Scan
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400ns
10MHz
250ns
16MHz
MD400005/-
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PDF
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Untitled
Abstract: No abstract text available
Text: 28C64 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • 50 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time SEEQ’s 28C64 is a CMOS 5V only, 8K x 8 Electrically
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OCR Scan
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28C64
28C64
000cycles
MD400004/D
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PDF
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ML50
Abstract: seeq 2816A 2816A 2816A eeprom eeprom 2816A 16K Electrically Erasable PROMs
Text: 2816A/5516A Timer E2 16K Electrically Erasable PROMs O ctober 1988 Features • ■ Description High E ndurance Write Cycles • 5S16A : 1,000,000 C ycles/B yte Minim um • 2816A : 10,000 C ycles/B yte Minim um SEEQ 's 5516A an d 2 8 1 6 A are 5 V on !y, 2K x8 electrically
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816A/5516A
D400016/C
816A/5516A
MD40Q016/C
ML50
seeq 2816A
2816A
2816A eeprom
eeprom 2816A
16K Electrically Erasable PROMs
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PDF
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48C1024
Abstract: 48C512
Text: SEE 2 TECHNOLOGY 8119233 SEEQ TECHNOLOGY INC Tfl "deJ 011^233 ooDina s J - INC 98D 01198 DT-4fc~/3-r7 4 8 C 5 12 / 4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K FLASH EEPROM July 1 987 A D V A N C E D A TA S H E E T Features • 64K /128K B yte Writable Non-Volatile Memory
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/128K
48C512/48C1024
Q0G1E07
12/48C1024
T-46-13-27
48C1024
48C512
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PDF
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Untitled
Abstract: No abstract text available
Text: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ's48F512 brings together the
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OCR Scan
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48F512
48F512is
512Kbit
s48F512
MD400062/A
48F512
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PDF
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01404
Abstract: SEEQ TECHNOLOGY 48C1024
Text: SEEÖ S1 19233 TECHNOLOGY SEEQ TECHNOLOGY INC Tö Ô Ë J 011^233 INC □ □ □ 1 3 cî h 98D 0 1396 M DJ~Q6-I3'Z1 4 8 C 5 1 2 /4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K F L A S H E E P R O M J u ly 1 98 7 A D V A N C E JJATA S H E E T Features • 64K/128K Byte Writable non-volatile memory
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OCR Scan
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64K/128K
Rete8119233
M48C512/48C1024
D0Q14DS
T-46-13-27
01404
SEEQ TECHNOLOGY
48C1024
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PDF
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