micronote 103
Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to
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pin diodes radiation detector
Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to
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Semiconductor Radiation Detector
Abstract: radiation level sensor GAMMA Radiation Detector cdte Directed Energy image sensor x-ray radiation DETECTOR CIRCUITS
Text: ENERGY DIFFERENTIATION TYPE 64 CH NEW CdTe RADIATION LINE SENSOR C10413 Accomplish X-ray and gamma-ray images with multicolor by energy differentiation FEATURES ●High radiation detection efficiency due to direct conversion type semiconductor CdTe detector
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C10413
SE-171-41
TAPP1066E01
Semiconductor Radiation Detector
radiation level sensor
GAMMA Radiation Detector
cdte
Directed Energy
image sensor x-ray
radiation DETECTOR CIRCUITS
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Abstract: No abstract text available
Text: X-RAY / ENERGY DIFFERENTIATION TYPE 64 CH GAMMA-RAY CdTe RADIATION LINE SENSOR DETECTOR C10413 Accomplish X-ray and gamma-ray images with multicolor by energy differentiation FEATURES ●High radiation detection efficiency due to direct conversion type semiconductor CdTe detector
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C10413
SE-164
TAPP1066E03
B1201
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2N2369 avalanche
Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military
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Alps 934a vco
Abstract: No abstract text available
Text: The following set of frequently asked questions concerns the radiation and operational performance of National Semiconductor’s LMX2305WG-MLS, LMX2315WG-MLS, and LMX2325WG-MLS space level phase lock loop devices. The non radiation specific information pertains to both the –QML military and
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LMX2305WG-MLS,
LMX2315WG-MLS,
LMX2325WG-MLS
12/11/9perature
LMX2305/15/25
Alps 934a vco
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dark detector application ,uses and working
Abstract: coil gold detector circuit diagram sensor cny70 CNY70 74HCTXX BC108B transistor specification TCRT5000 Reflective Optical Sensor TCRT1000 CIRCUIT DIAGRAM for SPEED DETECTOR USING 555 TIMER IC LIGHT DEPENDENT RESISTOR sensor
Text: Vishay Semiconductors Application of Optical Reflex Sensors TCRT1000, TCRT5000, CNY70 Vishay Semiconductor optoelectronic sensors contain infrared-emitting diodes as a radiation source and phototransistors as detectors. Typical applications include: D Copying machines
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TCRT1000,
TCRT5000,
CNY70
74HCT14
B7474
LS393
74HCT74
dark detector application ,uses and working
coil gold detector circuit diagram
sensor cny70
CNY70
74HCTXX
BC108B transistor specification
TCRT5000
Reflective Optical Sensor TCRT1000
CIRCUIT DIAGRAM for SPEED DETECTOR USING 555 TIMER IC
LIGHT DEPENDENT RESISTOR sensor
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SIC01S-18ISO90
Abstract: SiC Photodiodes
Text: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC
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SIC01S-18ISO90
SIC01S-18ISO90
SiC Photodiodes
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bfy 40
Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
Text: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT
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P12480EJNV0SG00
bfy 40
STM-16
STM-64
10 gb laser diode
NR8501BP
NEC SEMICONDUCTOR CATALOG
microwave product catalog
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Untitled
Abstract: No abstract text available
Text: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been
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14-MeV
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FillFactory
Abstract: FillFactory star 1000 STAR-1000 STAR-1000 cypress FillFactory cmos sensor CYIS1SM1000AA-HFC CYIISM1000AA-HFC ADC hard radiation STAR1000 FPGA STAR1000
Text: STAR-1000 Datasheet STAR-1000 1 M Pixel Radiation - Hard CMOS image sensor Datasheets Cypress Semiconductor Corporation 3901 North First Street San Jose, CA 95134 408-943-2600 Contact: [email protected] Document #:38-05714 Rev.* Revision 6.5 Page 1 of 24
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STAR-1000
STAR-1000
FillFactory
FillFactory star 1000
STAR-1000 cypress
FillFactory cmos sensor
CYIS1SM1000AA-HFC
CYIISM1000AA-HFC
ADC hard radiation
STAR1000 FPGA
STAR1000
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STAR250
Abstract: STAR-250 digital SUN SENSOR cmos detector proton basic FillFactory cmos sensor JLCC-84 BA-914 FillFactory STAR250 star tracker transistor 3901
Text: STAR-250 Datasheet STAR-250 250k Pixel Radiation Hard CMOS Image Sensor Datasheet Cypress Semiconductor Corporation 3901 North First Street Contact: [email protected] Document #:38-05713 Rev.* Revision 5.2 San Jose, CA 95134 408-943-2600 Page 1 of 35
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STAR-250
STAR-250
STAR250
digital SUN SENSOR cmos detector
proton basic
FillFactory cmos sensor
JLCC-84
BA-914
FillFactory
STAR250 star tracker
transistor 3901
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SIC01M-18
Abstract: No abstract text available
Text: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01M-18
SIC01M-18
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SIC01S-C18
Abstract: No abstract text available
Text: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-C18
SIC01S-C18
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SIC01S-18
Abstract: No abstract text available
Text: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-18
SIC01S-18
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SIC01XL-5
Abstract: No abstract text available
Text: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01XL-5
SIC01XL-5
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SIC01S-B18
Abstract: No abstract text available
Text: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01S-B18
SIC01S-B18
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SIC01L-5
Abstract: No abstract text available
Text: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The
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SIC01L-5
SIC01L-5
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smd transistor 304
Abstract: cdfp4-f16
Text: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,
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HS-6254RH
MIL-PRF-38535
HS-6254RH
1320nm
1340nm
05A/cm2
smd transistor 304
cdfp4-f16
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Untitled
Abstract: No abstract text available
Text: HS-2420RH Semiconductor Radiation Hardened Fast Sam p le and Hold juiy 1995 Features Description • Maximum Acquisition Time The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch
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HS-2420RH
HS-2420RH
05A/cm2
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MFOD1100
Abstract: 905 motorola M68000 MFOE1200 F086600380
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MFOD1100 Fiber Optics — 100 MHz Family Photo D etector Diode Output HERMETIC FAMILY FIBER OPTICS PHOTO DETECTOR DIODE O U TPU T . . . designed fo r infrared radiation detection in high frequency Fiber Optics Systems. It is
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T0-206AC
M68000
O-206AC
mfoe1200
10A-01
MFOD1100
905 motorola
F086600380
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Untitled
Abstract: No abstract text available
Text: HS-RTX2010RH Semiconductor Radiation Hardened Real Time Express Microcontroller March 1996 Features Applications • Devices QML Qualified in Accordance with MIL-PRF38535 • Space System s Embedded Control • Detailed Electrical and Screening Requirements are
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HS-RTX2010RH
MIL-PRF38535
125ns
120MeV/mg/cm2
HS-RTX2010RH
16-bit
038mm)
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KIA6220H
Abstract: xnxx Audio IC 9-pin
Text: KIA6220H SEMICONDUCTOR TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT 30W BTL DUAL AUDIO POWER AMPLIFIER. The thermal resistance 6 j-c of KIA6220H package CPP-17 Compact Power Package 17pin , designed for low thermal resistance, has high efficiency of heat radiation.
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KIA6220H
KIA6220H
CPP-17
17pin)
xnxx
Audio IC 9-pin
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uv flame sensor
Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Text: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor
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2771J
161-IMO
uv flame sensor
thermal conductivity sensor
27713
4h sic
ballistic sensor
Cree Microwave
cree package structure
X 1017
sac 326
2771J
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