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    SGSP211

    Abstract: sgsp312 P512 74c74 P312 Diode D7E
    Text: s G S-T H O H SO N G7E : 73C D I 1 7 3 j> 7 7121237 D DÜ 17SSQ 7 T ~-3?-/r_ SGSP211/P212 SGSP311/P312 ? SGSP511/P512 N-CHANNHL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    PDF 17SSQ SGSP211/P212 SGSP311/P312 SGSP511/P512 SGSP211 SGSP311 SGSP511 SGSP212 SGSP312 SGSP512 P512 74c74 P312 Diode D7E

    12N60FI

    Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90


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    PDF 2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118 2SK1119 2SK1120 2SK1154 2SK1156 12N60FI K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL

    SGSP111

    Abstract: No abstract text available
    Text: n S O G O B B S -T H O M S Ô N i D 7 E 7 3 C D N-CHANNEL POWER MOS TRANSISTORS H IG H S P E E D S W IT C H IN G ^ 7 ^ 2 3 7 '□oTtt’Ü 'o I “ 7 v 3 *?-P 7 _ SGSP111 SGSP112 1 7 2 9 0 A P P L IC A T IO N S These products are diffused multi-cell silicon gate


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    PDF SGSP111 SGSP112 300iis, SGSP211