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    Vishay Siliconix SI1428EDH-T1-GE3

    MOSFET N-CHANNEL 30V 4A SC70-6
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    DigiKey SI1428EDH-T1-GE3 Reel
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    Vishay Intertechnologies SI1428EDH-T1-GE3

    Transistor: N-MOSFET; unipolar; 30V; 4A; 1.8W; SC70; ESD
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    TME SI1428EDH-T1-GE3 3
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    Chip-Germany GmbH SI1428EDH-T1-GE3 46
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    EBV Elektronik SI1428EDH-T1-GE3 21 Weeks 33,000,000
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    Vishay Intertechnologies SI1428EDHT1GE3

    N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SI1428EDHT1GE3 6,000
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    SI1428 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1428EDH-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 4A SC70-6 Original PDF

    SI1428 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1428EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    30572-1

    Abstract: 46160
    Text: Si1428EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si1428EDH AN609, 5151u 4018m 1246m 1962u 3115m 9473m 3297m 27-Apr-11 30572-1 46160 PDF

    si1428

    Abstract: No abstract text available
    Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1428EDH 2002/95/EC OT-363 SC-70 Si1428EDH-T1-GE3 11-Mar-11 si1428 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1428EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si1428EDH 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    AN815

    Abstract: No abstract text available
    Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1428EDH 2002/95/EC OT-363 SC-70 Si1428EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN815 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF