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    SI1926 Price and Stock

    Vishay Siliconix SI1926DL-T1-E3

    MOSFET 2N-CH 60V 0.37A SC70-6
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    DigiKey SI1926DL-T1-E3 Digi-Reel 17,204 1
    • 1 $0.66
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    SI1926DL-T1-E3 Cut Tape 17,204 1
    • 1 $0.66
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    ES Components SI1926DL-T1-E3
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    Vishay Siliconix SI1926DL-T1-BE3

    MOSFET 2N-CH 60V 0.34A SC70-6
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    DigiKey SI1926DL-T1-BE3 Digi-Reel 4,724 1
    • 1 $0.66
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    SI1926DL-T1-BE3 Cut Tape 4,724 1
    • 1 $0.66
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    SI1926DL-T1-BE3 Reel 3,000 3,000
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    Vishay Siliconix SI1926DL-T1-GE3

    MOSFET 2N-CH 60V 0.37A SC70-6
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    DigiKey SI1926DL-T1-GE3 Digi-Reel 4,200 1
    • 1 $0.66
    • 10 $0.409
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    • 1000 $0.1783
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    SI1926DL-T1-GE3 Cut Tape 4,200 1
    • 1 $0.66
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    SI1926DL-T1-GE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI1926DL-T1-E3

    DUAL N-CHANNEL 60-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 01AC4977)
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    Avnet Americas SI1926DL-T1-E3 Ammo Pack 18 Weeks, 3 Days 1
    • 1 $0.425
    • 10 $0.338
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    SI1926DL-T1-E3 Reel 13 Weeks 3,000
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    Mouser Electronics SI1926DL-T1-E3 36,908
    • 1 $0.49
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    Verical SI1926DL-T1-E3 3,000 3,000
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    SI1926DL-T1-E3 3,000 3,000
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    SI1926DL-T1-E3 1,623 51
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    Arrow Electronics SI1926DL-T1-E3 3,000 17 Weeks 3,000
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    SI1926DL-T1-E3 3,000 13 Weeks 3,000
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    SI1926DL-T1-E3 Cut Strips 1,623 13 Weeks 1
    • 1 $0.4102
    • 10 $0.2915
    • 100 $0.2091
    • 1000 $0.1154
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    Newark SI1926DL-T1-E3 Cut Tape 149 1
    • 1 $0.046
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    SI1926DL-T1-E3 Reel 3,000
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    Bristol Electronics SI1926DL-T1-E3 1,974
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    TTI SI1926DL-T1-E3 Reel 18,000 3,000
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    EBV Elektronik SI1926DL-T1-E3 14 Weeks 3,000
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    Vishay Intertechnologies SI1926DL-T1-GE3

    DUAL N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI1926DL-T1-GE3)
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    Avnet Americas SI1926DL-T1-GE3 Reel 3,000
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    Verical SI1926DL-T1-GE3 3,000 3,000
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    SI1926DL-T1-GE3 1,121 51
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    Arrow Electronics SI1926DL-T1-GE3 3,000 9 Weeks 3,000
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    SI1926DL-T1-GE3 Cut Strips 1,121 9 Weeks 1
    • 1 $0.43
    • 10 $0.3246
    • 100 $0.2154
    • 1000 $0.1154
    • 10000 $0.1154
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    Newark SI1926DL-T1-GE3 Reel 3,000
    • 1 $0.189
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    • 100 $0.189
    • 1000 $0.189
    • 10000 $0.156
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    Avnet Asia SI1926DL-T1-GE3 3,000
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    EBV Elektronik SI1926DL-T1-GE3 10 Weeks 3,000
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    SI1926 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1926DL-T1-BE3 Vishay Siliconix MOSFET 2N-CH 60V 0.37A SOT363 Original PDF
    SI1926DL-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 370MA SC-70-6 Original PDF
    SI1926DL-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 370MA SOT363 Original PDF

    SI1926 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization:


    Original
    PDF Si1926DL OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si1926DL-T1-GE3

    Abstract: SI1926DL-T1-E3
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 18-Jul-08

    Si1926DL_RC

    Abstract: SI1926DL c 3807 3150 mosfet MOSFET 1052 AN609
    Text: Si1926DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF Si1926DL AN609, 10-Jun-08 Si1926DL_RC c 3807 3150 mosfet MOSFET 1052 AN609

    SI1926DL-T1-E3

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GEemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GEelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1926DL Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested • ESD Protected: 1800 V


    Original
    PDF Si1926DL OT-363 SC-70 Si1926DL-T1-E3 08-Apr-05

    S-81614

    Abstract: No abstract text available
    Text: SPICE Device Model Si1926DL Vishay Siliconix Dual N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si1926DL 18-Jul-08 S-81614

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    72193

    Abstract: si1926dl-t1-e3 Si1926 marking s1 sot363
    Text: New Product Si1926DL Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg Tested • ESD Protected: 1800 V


    Original
    PDF Si1926DL OT-363 SC-70 Si1926DL-T1-E3 18-Jul-08 72193 Si1926 marking s1 sot363

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 11-Mar-11

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original
    PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477