si1922
Abstract: SI1922EDH
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si1922EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si1922
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PDF
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SI1443EDH
Abstract: marking code bt S1209
Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET
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Original
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Si1443EDH
SC-70
Si1443EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code bt
S1209
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1428EDH
2002/95/EC
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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AN816
Abstract: No abstract text available
Text: AN816 Vishay Siliconix Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION Both n-and p-channel devices are available in this package – the drawing example below illustrates the p-channel device.
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Original
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AN816
SC-70
Si19xxEDH
Si15xxEDH
15-Jan-01
SC70-6
AN816
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PDF
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Alloy 42
Abstract: SC70-6 TA816 SC-70 sc-70 package pcb layout
Text: TA816 Vishay Siliconix Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION Both n-and p-channel devices are available in this package – the drawing example below illustrates the p-channel device.
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Original
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TA816
SC-70
Si19xxEDH
Si15xxEDH
SC70-6
15-Jan-01
Alloy 42
TA816
sc-70 package pcb layout
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)
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Original
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Si1972DH
2002/95/EC
OT-363
SC-70
Si1972DH-T1-E3
Si1972DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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S101-05
Abstract: AN816 SI1912EDH-T1
Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated
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Original
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Si1912EDH
SC-70
2002/95/EC
OT-363
SC-70
Si1912EDH-T1-E3
Si1912EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
S101-05
AN816
SI1912EDH-T1
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1913DH
SC-70
2002/95/EC
OT-363
SC-70
Si1913DH-T1-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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sc 1287
Abstract: No abstract text available
Text: New Product Si1422DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.026 at VGS = 4.5 V 4 0.030 at VGS = 2.5 V 4 0.036 at VGS = 1.8 V 4 VDS (V) 12 Qg (Typ.) 7.5 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si1422DH
2002/95/EC
OT-363
SC-70
Si1422DH-T1-GE3
11-Mar-11
sc 1287
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PDF
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sc 0645
Abstract: No abstract text available
Text: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si1405BDH
2002/95/EC
OT-363
SC-70
Si1405BDH-T1-E3
Si1405BDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
sc 0645
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ1420EEH www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested • Typical ESD Protection: 800 V
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Original
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SQ1420EEH
AEC-Q101
2002/95/EC
OT-363
SC-70
SC-70
SQ1420EEH-T1-GE3
11-Mar-11
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PDF
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v6003
Abstract: No abstract text available
Text: SQ1470EH Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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Original
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SQ1470EH
2002/95/EC
AEC-Q101
OT-363
SC-70
SC-70
SQ1470EH-T1-GE3
11-Mar-11
v6003
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PDF
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si1414
Abstract: No abstract text available
Text: New Product Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si1414DH
2002/95/EC
OT-363
SC-70
Si1414DH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si1414
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PDF
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si1424
Abstract: No abstract text available
Text: New Product Si1424EDH Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.033 at VGS = 4.5 V 4 0.038 at VGS = 2.5 V 4 0.045 at VGS = 1.8 V 4 0.070 at VGS = 1.5 V 3 VDS (V) 20 Qg (Typ.) 6 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si1424EDH
2002/95/EC
OT-363
SC-70
Si1424EDH-T1-GE3
11-Mar-11
si1424
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1413DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.115 at VGS = - 4.5 V - 2.9 0.155 at VGS = - 2.5 V - 2.4 0.220 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated
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Original
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Si1413DH
SC-70
2002/95/EC
OT-363
SC-70
Si1413DH-T1-E3
Si1413DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 ID (A)c RDS(on) (Ω) 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21
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Original
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Si1405BDH
2002/95/EC
OT-363
SC-70
Si1405BDH-T1-E3
Si1405BDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1426DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.075 at VGS = 10 V 3.6 0.115 at VGS = 4.5 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Thermally Enhanced SC-70 Package
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Original
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Si1426DH
SC-70
2002/95/EC
OT-363
SC-70
Si1426DH-T1-E3
Si1426DH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1499DH Vishay Siliconix P-Channel 1.2 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.078 at VGS = - 4.5 V - 1.6 VDS (V) -8 0.095 at VGS = - 2.5 V - 1.6 0.115 at VGS = - 1.8 V - 1.6 0.153 at VGS = - 1.5 V - 1.6 0.424 at VGS = - 1.2 V - 1.6b
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Original
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Si1499DH
OT-363
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1442DH Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () (Max.) ID (A) 0.020 at VGS = 4.5 V 4 0.024 at VGS = 2.5 V 4 0.030 at VGS = 1.8 V 4 Qg (Typ.) 13.1 nC • TrenchFET Power MOSFET • 100 % Rg Tested
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Original
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Si1442DH
OT-363
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)
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Original
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Si1972DH
2002/95/EC
OT-363
SC-70
Si1972DH-T1-E3
Si1972DH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ1470EH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQ1470EH
AEC-Q101
2002/95/EC
OT-363
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET
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Original
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Si1443EDH
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1472DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.057 at VGS = 10 V 5.6a 0.082 at VGS = 4.5 V 4.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Original
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Si1472DH
2002/95/EC
OT-363
SC-70
Si1472DH-T1-E3
Si1472DH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ1470EH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested
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Original
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SQ1470EH
AEC-Q101
2002/95/EC
OT-363
SC-70
SC-70
SQ1470EH-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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