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    SI2304 Price and Stock

    Vishay Siliconix SI2304BDS-T1-GE3

    MOSFET N-CH 30V 2.6A SOT23-3
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    DigiKey SI2304BDS-T1-GE3 Reel 63,000 3,000
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    Quest Components SI2304BDS-T1-GE3 28
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    Vishay Siliconix SI2304DDS-T1-GE3

    MOSFET N-CH 30V 3.3A/3.6A SOT23
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    DigiKey SI2304DDS-T1-GE3 Cut Tape 36,876 1
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    SI2304DDS-T1-GE3 Digi-Reel 36,876 1
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    SI2304DDS-T1-GE3 Reel 36,000 3,000
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    RS SI2304DDS-T1-GE3 Bulk 3,000
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    Quest Components SI2304DDS-T1-GE3 762
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    Vishay Siliconix SI2304BDS-T1-E3

    MOSFET N-CH 30V 2.6A SOT23-3
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    DigiKey SI2304BDS-T1-E3 Reel 24,000 3,000
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    Bristol Electronics SI2304BDS-T1-E3 11,065 10
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    SI2304BDS-T1-E3 100 10
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    Quest Components SI2304BDS-T1-E3 8,852
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    SI2304BDS-T1-E3 80
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    SI2304BDS-T1-E3 64
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    Vishay Siliconix SI2304DDS-T1-BE3

    MOSFET N-CH 30V 3.3A/3.6A SOT23
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    DigiKey SI2304DDS-T1-BE3 Cut Tape 12,078 1
    • 1 $0.55
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    SI2304DDS-T1-BE3 Digi-Reel 12,078 1
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    SI2304DDS-T1-BE3 Reel 9,000 3,000
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    New Advantage Corporation SI2304DDS-T1-BE3 6,000 1
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    Vishay Siliconix SI2304BDS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2304BDS-T1-BE3 Cut Tape 9,870 1
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    SI2304BDS-T1-BE3 Digi-Reel 9,870 1
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    SI2304BDS-T1-BE3 Reel 3,000 3,000
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    New Advantage Corporation SI2304BDS-T1-BE3 6,000 1
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    Find more SI2304 price and stock on Findchips.com

    SI2304 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2304 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    SI2304BDS Vishay Siliconix MOSFETs Original PDF
    Si2304BDS SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    Si2304BDS-T1 Vishay Transistor Mosfet N-CH 30V 2.6A 3TO-236 REEL Original PDF
    SI2304BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.6A SOT23-3 Original PDF
    Si2304BDS-T1-E3 Vishay Telefunken Original PDF
    SI2304BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.6A SOT23-3 Original PDF
    SI2304DDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.3A SOT23 Original PDF
    SI2304DS Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    Si2304DS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si2304DS Vishay Transistor Mosfet N-CH 30V 2.5A 3TO-236 Original PDF
    Si2304DS Vishay Intertechnology N-Channel 30 V (D-S) MOSFET Original PDF
    SI2304DS,215 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@[email protected] mOhm; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    SI2304DS/DG,215 NXP Semiconductors SI2304DS/DG - N-channel TrenchMOS intermediate level FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF
    Si2304DS SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    Si2304DS-T1 Vishay Transistor Mosfet N-CH 30V 2.5A 3TO-236 REEL Original PDF
    SI2304DS-T1 Vishay Intertechnology N-Channel Enhancement-Mode Transistor Original PDF
    SI2304DST/R NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 1.7 A; Qgd (typ): 1.35 nC; RDS(on): 117@[email protected] mOhm; VDSmax: 30 V Original PDF
    SI2304-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-23 PACKAGE Original PDF

    SI2304 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking L4 mosfet sot23

    Abstract: SI2304
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304 PDF

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11 PDF

    4614 mosfet

    Abstract: Si2304DDS A 0412 MOSFET MOSFET 4614 AN609
    Text: Si2304DDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si2304DDS AN609, 29-Jul-09 4614 mosfet A 0412 MOSFET MOSFET 4614 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		SI2304 OT-23 OT-23 PDF

    SI2304DS-T1-E3

    Abstract: SI2304BDS-T1-E3 Si2304BDS Si2304BDS-T1 Si2304DS Si2304DS-T1 n-Channel 12-V D-S MOSFET sot-23 6VSD
    Text: Specification Comparison Vishay Siliconix Si2304BDS vs. Si2304DS Description: N-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2304BDS-T1-E3 Replaces Si2304DS-T1-E3 Si2304BDS-T1 Replaces Si2304DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		Si2304BDS Si2304DS OT-23 Si2304BDS-T1-E3 Si2304DS-T1-E3 Si2304BDS-T1 Si2304DS-T1 06-Nov-06 n-Channel 12-V D-S MOSFET sot-23 6VSD PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11 PDF

    4606 mosfet

    Abstract: 4606 A 4606 transistor 4606 mosfet AN609 Si2304BDS
    Text: Si2304BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si2304BDS AN609 03-May-07 4606 mosfet 4606 A 4606 transistor 4606 mosfet PDF

    Si2304BDS

    Abstract: Si2304BDS-T1
    Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3


    Original     		Si2304BDS O-236 OT-23) Si2304BDS-T1--E3 S-32412--Rev. 24-Nov-03 Si2304BDS-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Si2304BDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2304BDS 18-Jul-08 PDF

    Si2304DDS

    Abstract: SI2304DDS-T1-GE3 n-Channel 12-V D-S MOSFET sot-23
    Text: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2304DDS 2002/95/EC O-236 OT-23) Si2304DDS-T1-GE3 18-Jul-08 n-Channel 12-V D-S MOSFET sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2304DDS 2002/95/EC O-236 OT-23) Si2304DDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		SI2304 OT-23 OT-23 PDF

    MSB003

    Abstract: SI2304DS
    Text: SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology Product availability: SI2304DS in SOT23.


    Original     		SI2304DS M3D088 SI2304DS MSB003 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • • • • • •   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2304 Halogen free available upon request by adding suffix "-HF"


    Original     		SI2304 OT-23 OT-23 PDF

    Si2304BDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2304BDS 0-to-10V 16-Oct-03 PDF

    Si2304DS

    Abstract: 70901
    Text: SPICE Device Model Si2304DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2304DS 13-Jul-98 70901 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2304DDS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si2304DDS AN609, 4415u 6897u 0973m 2633u 4614m 2779u 2933m 25-Jun-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2304DDS www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si2304DDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 08-Apr-05 PDF

    Si2304DDS

    Abstract: No abstract text available
    Text: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si2304DDS 2002/95/EC O-236 OT-23) Si2304DDS-T1-GE3 11-Mar-11 PDF

    Si2304DDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2304DDS Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si2304DDS 18-Jul-08 PDF

    SI2304DS

    Abstract: No abstract text available
    Text: SPICE Device Model SI2304DS N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		SI2304DS Si2304DS PDF

    SI2304DS marking code SOT-23

    Abstract: A4* marking code A4 MARKING CODE
    Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )


    OCR Scan     		2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE PDF