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Vishay Siliconix SI3442CDV-T1-GE3 MOSFET N-CH 20V 8A 6TSOP
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DigiKey	SI3442CDV-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3442CDV-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3442CDV-T1-GE3	Digi-Reel			1	1 $0.45 10 $0.45 100 $0.45 1000 $0.45 10000 $0.45	Buy Now
Vishay BLH SI3442CDV-T1-GE3
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Bristol Electronics	SI3442CDV-T1-GE3		2,494		4	1 - 10 $1.3125 100 $0.4922 1000 $0.3675 10000 $0.3412	Buy Now
Vishay Intertechnologies SI3442CDV-T1-GE3 SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.6A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-193AA
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Quest Components	SI3442CDV-T1-GE3		1,995			1 $1.75 10 $1.75 100 $1.75 1000 $0.455 10000 $0.4375	Buy Now
Others SI3442CDV AVAILABLE EU
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ComSIT USA	SI3442CDV		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI3442CDV Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3442CDV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 6TSOP		Original	PDF

SI3442CDV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SPICE Device Model Si3442CDV www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si3442CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si3442CDV-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	Si3442CDV-GE3 AN609, 2578u 1241u 6996m 8508u 9339m 5222m 1032m 07-May-12
Untitled Abstract: No abstract text available Text: Si3442CDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 a RDS(on) () Max. ID (A) 0.027 at VGS = 10 V 8d 0.030 at VGS = 4.5 V 7.5 0.049 at VGS = 2.5 V 6.1 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:	Original	PDF	Si3442CDV Si3442CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SI3442CDV Abstract: No abstract text available Text: Si3442CDV Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 a RDS(on) () Max. ID (A) 0.027 at VGS = 10 V 8d 0.030 at VGS = 4.5 V 7.5 0.049 at VGS = 2.5 V 6.1 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:	Original	PDF	Si3442CDV Si3442CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836