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    SI3443 Price and Stock

    Vishay Siliconix SI3443CDV-T1-GE3

    MOSFET P-CH 20V 5.97A 6TSOP
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    DigiKey SI3443CDV-T1-GE3 Digi-Reel 16,931 1
    • 1 $0.8
    • 10 $0.496
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    SI3443CDV-T1-GE3 Cut Tape 16,931 1
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    SI3443CDV-T1-GE3 Reel 15,000 3,000
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    • 10000 $0.18917
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    Vishay Siliconix SI3443DDV-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI3443DDV-T1-BE3 Digi-Reel 11,954 1
    • 1 $0.44
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    SI3443DDV-T1-BE3 Cut Tape 11,954 1
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    SI3443DDV-T1-BE3 Reel 9,000 3,000
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    Vishay Siliconix SI3443CDV-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3443CDV-T1-BE3 Digi-Reel 10,761 1
    • 1 $0.8
    • 10 $0.496
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    • 1000 $0.2202
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    SI3443CDV-T1-BE3 Cut Tape 10,761 1
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    SI3443CDV-T1-BE3 Reel 3,000 3,000
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    Vishay Siliconix SI3443BDV-T1-E3

    MOSFET P-CH 20V 3.6A 6TSOP
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    DigiKey SI3443BDV-T1-E3 Digi-Reel 6,262 1
    • 1 $1.03
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    • 1000 $0.29453
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    SI3443BDV-T1-E3 Cut Tape 6,262 1
    • 1 $1.03
    • 10 $0.646
    • 100 $1.03
    • 1000 $0.29453
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    SI3443BDV-T1-E3 Reel 3,000 3,000
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    RS SI3443BDV-T1-E3 Bulk 3,000
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    Bristol Electronics SI3443BDV-T1-E3 1,915 9
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    • 100 $0.2812
    • 1000 $0.1125
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    SI3443BDV-T1-E3 1,200 9
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    • 100 $0.2812
    • 1000 $0.1125
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    Quest Components SI3443BDV-T1-E3 2,988
    • 1 $0.45
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    SI3443BDV-T1-E3 1,532
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    SI3443BDV-T1-E3 1,111
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    SI3443BDV-T1-E3 960
    • 1 $0.75
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    Vishay Siliconix SI3443BDV-T1-BE3

    MOSFET P-CH 20V 3.6A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3443BDV-T1-BE3 Cut Tape 5,300 1
    • 1 $1.04
    • 10 $0.651
    • 100 $1.04
    • 1000 $0.29737
    • 10000 $0.29737
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    SI3443BDV-T1-BE3 Digi-Reel 5,300 1
    • 1 $1.04
    • 10 $0.651
    • 100 $1.04
    • 1000 $0.29737
    • 10000 $0.29737
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    SI3443BDV-T1-BE3 Reel 3,000 3,000
    • 1 -
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    • 10000 $0.25764
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    Find more SI3443 price and stock on Findchips.com

    SI3443 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3443BDV Vishay Siliconix MOSFETs Original PDF
    SI3443BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 6-TSOP Original PDF
    SI3443BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.6A 6-TSOP Original PDF
    SI3443CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.97A 6TSOP Original PDF
    SI3443CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 5.97A 6TSOP Original PDF
    SI3443DDV-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V TSOP6S Original PDF
    SI3443DV Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench - MOSFET Original PDF
    SI3443DV International Rectifier HEXFET Power Mosfet Original PDF
    SI3443DV International Rectifier HEXFET Power MOSFET Original PDF
    Si3443DV Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI3443DV Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si3443DV International Rectifier HEXFET Power MOSFET Scan PDF
    SI3443DV_NF073 Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    SI3443DV_NL Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    SI3443DVPBF InterFET HEXFET Power MOSFET Original PDF
    SI3443DV_Q Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    Si3443DV SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI3443DV-T1 Vishay Intertechnology P-Channel 2.5-V (G-S) Rated MOSFET Original PDF
    SI3443DVTR International Rectifier -20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package Original PDF
    SI3443DVTRPBF International Rectifier Original PDF

    SI3443 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet p-channel 300v irf

    Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
    Text: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier


    Original     		PDF PD-95240 Si3443DVPbF OT-23. mosfet p-channel 300v irf P-Channel 200V MOSFET TSOP6 IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V

    SI3443DV

    Abstract: No abstract text available
    Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm


    Original     		PDF Si3443DV S-54948--Rev. 29-Sep-97

    SI3443DV-T1-E3

    Abstract: SI3443BDV-T1-E3 SI3443DV-T1 74073 Si3443DV SI3443BDV
    Text: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1-E3 Replaces Si3443DV-T1-E3 Si3443BDV-T1 Replaces Si3443DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3443BDV Si3443DV Si3443BDV-T1-E3 Si3443DV-T1-E3 Si3443BDV-T1 Si3443DV-T1 06-Nov-06 74073

    Si3443DV

    Abstract: 70-904
    Text: SPICE Device Model Si3443DV P-Channel 2.5-V G-S Rated MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si3443DV 70-904

    Si3443DV-T1

    Abstract: Si3443DV-T1-E3 Si3443DV
    Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View


    Original     		PDF Si3443DV Si3443DV-T1--E3 18-Jul-08 Si3443DV-T1 Si3443DV-T1-E3

    AN609

    Abstract: Si3443BDV 74618 448-48 sony+448-48 115527
    Text: Si3443BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3443BDV AN609 08-May-07 74618 448-48 sony+448-48 115527

    Si3443DV

    Abstract: 70-904
    Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3443DV 18-Jul-08 70-904

    SI3443BDV

    Abstract: Si3443DV Si3443DV-T1-E3 Si3443DV-T1 Si3443BDV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5-V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1 Replaces Si3443DV-T1 Si3443BDV-T1—E3 (Lead (Pb)-Free version) Replaces Si3443DV-T1—E3


    Original     		PDF Si3443BDV Si3443DV Si3443BDV-T1 Si3443DV-T1 Si3443BDV-T1--E3 Si3443DV-T1--E3 Si3443DV-T1-E3 Si3443BDV-T1-E3

    Si3443BDV

    Abstract: No abstract text available
    Text: Si3443BDV New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.060 @ VGS = −4.5 V −4.7 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested


    Original     		PDF Si3443BDV Si3443BDV-T1--E3 S-40575--Rev. 29-Mar-04

    SI3443DV-T1

    Abstract: No abstract text available
    Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View


    Original     		PDF Si3443DV Si3443DV-T1--E3 08-Apr-05 SI3443DV-T1

    Untitled

    Abstract: No abstract text available
    Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm


    Original     		PDF Si3443DV 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm


    Original     		PDF Si3443DV S-54948--Rev. 29-Sep-97

    Si3443CDV

    Abstract: Si3443CDV-T1-E3
    Text: New Product Si3443CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.7 0.084 at VGS = - 2.7 V - 3.9 0.100 at VGS = - 2.5 V - 3.4 • TrenchFET Power MOSFET • PWM Optimized • 100 % Rg Tested


    Original     		PDF Si3443CDV Si3443CDV-T1-E3 08-Apr-05

    P-Channel 200V MOSFET TSOP6

    Abstract: No abstract text available
    Text: PD- 93795 Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D RDS on = 0.065Ω S T o p V ie w Description These P-channel MOSFETs from International Rectifier


    Original     		PDF Si3443DV OT-23. P-Channel 200V MOSFET TSOP6

    Si3443DV

    Abstract: No abstract text available
    Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for


    Original     		PDF Si3443DV

    Untitled

    Abstract: No abstract text available
    Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for


    Original     		PDF Si3443DV

    Si3443DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3443DV 17-Apr-01

    Si3443BDV

    Abstract: 7276 72766 SI3443
    Text: SPICE Device Model Si3443BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3443BDV 18-Jul-08 7276 72766 SI3443

    SI3443DV-T1

    Abstract: No abstract text available
    Text: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = - 4.5 V - 4.5 0.090 @ VGS = - 2.7 V - 3.8 0.100 @ VGS = - 2.5 V - 3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm


    Original     		PDF Si3443DV Si3443DV-T1 S-31725--Rev. 18-Aug-03

    SI3443CDV-T1-E3

    Abstract: Si3443CDV-T1-GE3 SI3443CDV RG132
    Text: New Product Si3443CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.060 at VGS = - 4.5 V - 4.7 0.084 at VGS = - 2.7 V - 3.9 0.100 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3443CDV Si3443CDV-T1-E3 Si3443CDV-T1-GE3 18-Jul-08 RG132

    AN609

    Abstract: Si3443DV
    Text: Si3443DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3443DV AN609 30-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Si3443DDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.047 at VGS = -4.5 V -4 0.080 at VGS = -2.7 V -4 0.090 at VGS = -2.5 V • TrenchFET power MOSFET Qg (TYP.) • PWM optimized


    Original     		PDF Si3443DDV Si3443DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for


    Original     		PDF Si3443DV

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si3443DV Semiconductors P-Channel, 2.5-V G-S Rated MOSFET Product Summary V D S (V ) -2 0 r DS(on) (£2) I d (A ) 0 .0 6 5 @ V Gs = - 4 .5 V ± 4 .4 0 .0 9 0 @ V Gs = - 2 .7 V ± 3 .7 0 .1 0 0 @ V Gs = - 2 . 5 V ± 3 .5 (4 )S Q TSOP-6 Top View 3 mm


    OCR Scan     		PDF Si3443DV S-54948â 29-Sep-97