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    Vishay Siliconix SI4102DY-T1-E3

    MOSFET N-CH 100V 3.8A 8SO
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    DigiKey SI4102DY-T1-E3 Reel 2,500
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    Vishay Siliconix SI4102DY-T1-GE3

    MOSFET N-CH 100V 3.8A 8SO
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    DigiKey SI4102DY-T1-GE3 Digi-Reel 1
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    SI4102DY-T1-GE3 Cut Tape
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    Vishay Intertechnologies SI4102DYT1E3

    N-CHANNEL 100-V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    ComSIT USA SI4102DYT1E3 6,954
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    Vishay Intertechnologies SI4102DYT1GE3

    N-CHANNEL 100-V (D-S) MOSFET Small Signal Field-Effect Transistor, 0.0027A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4102DYT1GE3 2,500
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    SI4102 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4102DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC Original PDF
    SI4102DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC Original PDF

    SI4102 Datasheets Context Search

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    SI-4102

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 11-Mar-11 SI-4102

    Untitled

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4102DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4102DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS


    Original     		PDF Si4102DY Si4102DY-T1-E3 18-Jul-08

    SI-4102

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI-4102

    SI-4102

    Abstract: AN609 Si4102DY 69297
    Text: Si4102DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4102DY AN609 13-Aug-07 SI-4102 69297

    Si4102DY-T1-E3

    Abstract: SI-4102 si4102 Si4102DY RG370
    Text: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS


    Original     		PDF Si4102DY Si4102DY-T1-E3 08-Apr-05 SI-4102 si4102 RG370

    SI-4102

    Abstract: Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 DSA0038151
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 18-Jul-08 SI-4102 DSA0038151

    SI-4102

    Abstract: Si4102DY SI4102
    Text: SPICE Device Model Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4102DY 18-Jul-08 SI-4102 SI4102

    Untitled

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 d • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization: For definitions of compliance please see


    Original     		PDF Si4102DY Si4102DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original     		PDF Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477